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    16mb HIGH-SPEED ASYNCHRONOUS SRAM

    Abstract: IBM041816CHLBC IBM043616CHLBC SA37T
    Text: . IBM043616CHLBC IBM041816CHLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation


    Original     		PDF IBM043616CHLBC IBM041816CHLBC 16mb HIGH-SPEED ASYNCHRONOUS SRAM IBM041816CHLBC IBM043616CHLBC SA37T

    SA37T

    Abstract: cq 721 IBM041816CBLBC IBM043616CBLBC
    Text: . IBM043616CBLBC IBM041816CBLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation


    Original     		PDF IBM043616CBLBC IBM041816CBLBC SA37T cq 721 IBM041816CBLBC IBM043616CBLBC

    K7D803671B-HC33

    Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
    Text: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2


    Original     		PDF K7D803671B K7D801871B 256Kx36 512Kx18 -HC16 012MAX K7D803671B-HC33 K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37

    XRT6166CP-F

    Abstract: No abstract text available
    Text: XR-T6166 .the analog plus company TM Codirectional Digital Data Processor June 1997–3 APPLICATIONS FEATURES D CCITT G.703 Compliant 64kbps Codirectional Interface D Low Power CMOS Technology D All Receiver and Transmitter Inputs and Outputs are TTL Compatible


    Original     		PDF XR-T6166 64kbps XRT6166 30-Jul-09 XRT6166 XRT6166ID-F SOIC28 XRT6166IP-F PDIP28 XRT6166CD-F XRT6166CP-F

    K7D163674B

    Abstract: No abstract text available
    Text: K7D163674B K7D161874B 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Oct. 2003 Advance Rev. 0.1 Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items.


    Original     		PDF K7D163674B K7D161874B 512Kx36 1Mx18 012MAX

    SRAM 8T

    Abstract: No abstract text available
    Text: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7D323674C K7D321874C 1Mx36 2Mx18 153BGA 012MAX SRAM 8T

    CXK77Q18162GB

    Abstract: CXK77Q18162GB-25 CXK77Q18162GB-27 CXK77Q18162GB-3 CXK77Q36162GB CXK77Q36162GB-25 CXK77Q36162GB-27 CXK77Q36162GB-3
    Text: SONY CXK77Q36162GB / CXK77Q18162GB 16Mb DDR1 HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 25/27/3 Preliminary Description The CXK77Q36162GB (organized as 524,288 words by 36 bits) and the CXK77Q18162GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77Q36162GB CXK77Q18162GB CXK77Q36162GB BGA-153P-021 BGA153-P-1422 750mA 700mA CXK77Q18162GB CXK77Q18162GB-25 CXK77Q18162GB-27 CXK77Q18162GB-3 CXK77Q36162GB-25 CXK77Q36162GB-27 CXK77Q36162GB-3

    AN-81 national

    Abstract: LM378 12v stereo amplifiers with tone controls LM378 data sheet lm1820 LM378 equivalent TAPEHEAD fm receiver circuit using ic with all component d Lm1820 and application note 32SN2F1-30
    Text: National Semiconductor Application Note 147 Jim Sherwin June 1975 INTRODUCTION The recent availability of a broad line of truly high-performance consumer integrated circuits makes it possible to construct a high quality low noise low distortion and low cost


    Original     		PDF

    murata cfu455e

    Abstract: CFU455E Murata CDBM455C7 7BRE-7437Z CFSK107M3 TK10931V tk10931 2sc945 2SC1675 tkxn22160bu
    Text: アプリケーションマニュアル 通信機用 AM/FM IF ICのご紹介 TK10931V CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS


    Original     		PDF TK10931V GC3-E028E TK10931VFMAMIF 455kHz murata cfu455e CFU455E Murata CDBM455C7 7BRE-7437Z CFSK107M3 TK10931V tk10931 2sc945 2SC1675 tkxn22160bu

    K7D161871B-HC30

    Abstract: K7D163671B-HC33 K7D163671B-HC37
    Text: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3


    Original     		PDF 512Kx36 1Mx18 K7D163671B K7D161871B Bin-40 012MAX K7D161871B-HC30 K7D163671B-HC33 K7D163671B-HC37

    MCM63R836

    Abstract: MCM64E836 MPC7450 Signal Path Designer
    Text: Freescale Semiconductor, Inc. Order Number: AN2182/D Rev. 0, 8/2001 Freescale Semiconductor, Inc. Semiconductor Products Sector Application Note Setting the Sample Points for the MPC7450 L3 Cache Michael Everman RISC Applications risc10@email.sps.mot.com


    Original     		PDF AN2182/D MPC7450 risc10 MPC7450, MCM63R836 MCM64E836 Signal Path Designer

    IBM0418A4CFLBB

    Abstract: IBM0418A8CFLBB IBM0436A4CFLBB IBM0436A8CFLBB
    Text: . IBM0418A8CFLBB IBM0418A4CFLBB Preliminary IBM0436A8CFLBB IBM0436A4CFLBB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • CMOS Technology • HSTL Outputs


    Original     		PDF IBM0418A8CFLBB IBM0418A4CFLBB IBM0436A8CFLBB IBM0436A4CFLBB 256Kx36 512Kx18) 128Kx36 256Kx18) cddrh251620 IBM0418A4CFLBB IBM0418A8CFLBB IBM0436A4CFLBB IBM0436A8CFLBB

    IBM0418A4CBLBB

    Abstract: IBM0418A8CBLBB IBM0436A4CBLBB IBM0436A8CBLBB 256k x 18
    Text: . IBM0418A8CBLBB IBM0418A4CBLBB Preliminary IBM0436A8CBLBB IBM0436A4CBLBB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) Features • 8Mb: 256K x 36 or 512K x 18 Organizations 4Mb: 128K x 36 or 256K x 18 Organizations • CMOS Technology • HSTL Input and Output levels


    Original     		PDF IBM0418A8CBLBB IBM0418A4CBLBB IBM0436A8CBLBB IBM0436A4CBLBB 256Kx36 512Kx18) 128Kx36 256Kx18) cddrh2519 IBM0418A4CBLBB IBM0418A8CBLBB IBM0436A4CBLBB IBM0436A8CBLBB 256k x 18

    78H15

    Abstract: No abstract text available
    Text: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M


    Original     		PDF K7D163671M K7D161871M 512Kx36 1Mx18 KM736FS16017 -HC25 Add-HC37 IDD37 800mA 78H15

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77Q36162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 512K x 36 Description The CXK77Q36162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer


    Original     		PDF CXK77Q36162GB CXK77Q36162GB 750mA 700mA

    hc40 3p

    Abstract: K7D161871M-HC40 tkxc 153-FCBGA-1422
    Text: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M


    Original     		PDF K7D163671M K7D161871M 512Kx36 1Mx18 KM736FS16017 -HC25 Add-HC37 27x16 hc40 3p K7D161871M-HC40 tkxc 153-FCBGA-1422

    Untitled

    Abstract: No abstract text available
    Text: XR-T6165 .the analog plus company TM Codirectional Digital Data Processor May 1997–3 FEATURES APPLICATIONS D Low Power CMOS Technology D CCITT G.703 Compliant 64kbps Codirectional Interface D All Receiver and Transmitter Inputs and Outputs are TTL Compatible


    Original     		PDF XR-T6165 64kbps XRT6165 30-Jul-09 XRT6165 XRT6165ID-F SOIC24 XRT6165CD-F SOIC24

    murata cfu455e

    Abstract: tk10931 toko 7BRE7437Z TK10931V TOKO tkxc 2SC1675 CFU455E Murata CDBM455C7 CFSK107M3 7BRE-7437Z
    Text: アプリケーションマニュアル 通信機用 AM/FM IF ICのご紹介 TK10931V CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS


    Original     		PDF TK10931V GC3-E028D TK10931VFMAMIF murata cfu455e tk10931 toko 7BRE7437Z TK10931V TOKO tkxc 2SC1675 CFU455E Murata CDBM455C7 CFSK107M3 7BRE-7437Z

    CXK77L18162GB

    Abstract: CXK77L18162GB-25 CXK77L18162GB-27 CXK77L18162GB-3
    Text: SONY CXK77L18162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer


    Original     		PDF CXK77L18162GB CXK77L18162GB CXK77L18162GB-25 CXK77L18162GB-27 CXK77L18162GB-3

    K7D161871M-HC40

    Abstract: r1250 535BB1
    Text: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M


    Original     		PDF K7D163671M K7D161871M 512Kx36 1Mx18 KM736FS16017 -HC25 Add-HC37 27x16 K7D161871M-HC40 r1250 535BB1

    diode F4 3J

    Abstract: MCM64E918FC4.0 MCM64E836 MCM64E918
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8MB Double Data Rate HSTL I/O Fast SRAM The MCM64E918 / MCM64E836 are 8M–bit pipelined burst synchronous late write fast static RAMs designed to provide very high data bandwidth in secondary cache applications. The MCM64E918 organized as 512K words by 18 bits wide


    Original     		PDF MCM64E918 MCM64E836 MCM64E918 MCM64E836 MCM64E918/D diode F4 3J MCM64E918FC4.0

    Untitled

    Abstract: No abstract text available
    Text: XR-T6165 ¿E’ E X q R Codirectional Digital Data Processor .the analog p lu s com pany IP' /äSWSi*1 May 1997-3 FEATURES APPLICATIONS Low Power CMOS Technology CCITT G.703 Compliant 64kbps Codirectional Interface All Receiver and Transmitter Inputs and Outputs are


    OCR Scan     		PDF XR-T6165 64kbps XR-T6164 125ns 3422blfl

    1P 2F MARKING

    Abstract: No abstract text available
    Text: ADVANCE |v i i c 2 5 6 K x 1 8 /1 2 8 K x 36 3 . 3 V Vod, HSTL. PIPELINED C L A Y M O R E SRAM :r o n R M h tt. U I V I U M T57L256H 18P M T57L128H 36P d FEATURES • • • • • • • • • • • • • • • • • • • • • Fast cycle times: 4.4ns, 5ns, 5.5ns, 6ns and 7ns


    OCR Scan     		PDF T57L256H T57L128H 18/126K MT57L256H18P C1996, 1P 2F MARKING

    rt6164

    Abstract: 1PXF transformer
    Text: XR-T61 66 C'EXAR [.the a n a lo g plu s Codirectional Digital Data Processor com pan y J M June 1997-3 APPLICATIONS FEATURES • Low Power CMOS Technology • • All Receiver and Transmitter Inputs and Outputs are TTL Compatible CCITT G.703 Interface •


    OCR Scan     		PDF XR-T61 125jis 64kbps rt6164 1PXF transformer