transistor SMD t04
Abstract: EIAJ-RRM-08-B TL 949 transistor smd t05 E1100 E1002A smd T04 SMD Transistors t04 TLGE1008A TLOE1008A
Text: New Product Guide Four-Element InGaA P High-Brightness Surface-Mount Devices TL E1002A Series, TL E1005B Series, TL E1008A Series and TL E1100 Series Toshiba are now offering new InGaA P high-brightness surface-mount LED lamps based on , a new process and structure as well as on Toshiba s own thin-film crystal growth technology
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E1002A
E1005B
E1008A
E1100
1608-type
E1008A
transistor SMD t04
EIAJ-RRM-08-B
TL 949
transistor smd t05
smd T04
SMD Transistors t04
TLGE1008A
TLOE1008A
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TLGE
Abstract: TLRME tlpge
Text: New Product Guide Four-Element InGaA P High-Brightness LED Lamp Series New Devices in the TL E Series Four-Element (InGaA P) High-Brightness LED Lamp Series New Devices in the TL • E Series Toshiba are now offering new devices in the TL■E Series of InGaAlP high-brightness LED lamps based on
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lm558
Abstract: DIODE SMD t04 EIAJ-RRM12B EIAJ-RRM-12-B transistor SMD t04 transistor SMD t05 TLOE1100 equivalent EIAJ-RRM-08B rs 587 smd t04 68
Text: LED Lamps PRODUCT GUIDE • Toshiba Visible LED Lamp Family Outline LED Lamp Family 299 products High-blightness lead type: 231 products • TL✽H Series • TL✽E Series • TL✽U Series ● InGaA P products are mainly from the World’s highest luminosity level “TL✽H Series” to general-purpose “TL✽U Series”
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TLE16TP
S4F42
S4F43
lm558
DIODE SMD t04
EIAJ-RRM12B
EIAJ-RRM-12-B
transistor SMD t04
transistor SMD t05
TLOE1100 equivalent
EIAJ-RRM-08B
rs 587
smd t04 68
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5252 F led
Abstract: 5252 F 1007 5252 F 1002 sa 732 smd toshiba TLBA1100 TLBC1002 TLBC1100 TLEGC1002 TLEGC1100
Text: New Product Guide Blue and Green LED Lamps TLBA Series, TLBC Series and TLEGC Series Toshiba has added brand new blue LED lamps and green LED lamps to its LED product line-up. The spectrum of available colors has thereby been expanded beyond the range of red to pure green.
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nm/470
5252 F led
5252 F 1007
5252 F 1002
sa 732
smd toshiba
TLBA1100
TLBC1002
TLBC1100
TLEGC1002
TLEGC1100
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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Untitled
Abstract: No abstract text available
Text: New Product Guide Low Power Consumption, Short-Lead Photointerrupter Photo-IC Output Type TLP1031, TLP1033 and TLP1037 Low power consumption, short-lead photointerrupter (photo-IC output type) TLP1031•TLP1033•TLP1037 Maximum Ratings (Ta = 2 Rating LED
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TLP1031,
TLP1033
TLP1037
TLP1031
TLP1037
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5252 F led
Abstract: P1031 5252 F 1002 P-1031 p1037 tl 701 amp diagram
Text: New Product Guide Low Power Consumption, Short-Lead Photointerrupter Photo-IC Output Type TLP1031, TLP1033 and TLP1037 Low power consumption, short-lead photointerrupter (photo-IC output type) TLP1031•TLP1033•TLP1037 Maximum Ratings (Ta = 2 Rating LED
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TLP1031,
TLP1033
TLP1037
TLP1031
TLP1037
5252 F led
P1031
5252 F 1002
P-1031
p1037
tl 701 amp diagram
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ne gJ8
Abstract: NE j eS8
Text: PS/G Single Digit ESR / RoHS Compliant Series Q FEATURE • Lead-free type. RoHS Compliant. • Extreme low ESR 7mhom and excellent noise absorption performance. • High capacitance and ultra low ESR based upon on our original Conductive Polymer technology.
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100kHz
D0G477M7
ne gJ8
NE j eS8
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PSGD0E687M7
Abstract: ne gJ8 nec en8 nec es8 NEC Tokin ultra low esr NE K eJ8 nec gJ8
Text: PS/G Single Digit ESR / RoHS Compliant Series • FEATURE • Lead-free type. RoHS Compliant. • Extreme low ESR 7mhom and excellent noise absorption performance. • High capacitance and ultra low ESR based upon on our original Conductive Polymer technology.
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9653TCAVOL12E1006E0
PSGD0E687M7
ne gJ8
nec en8
nec es8
NEC Tokin ultra low esr
NE K eJ8
nec gJ8
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nec en8
Abstract: NE J eN8 NE K eJ8 ne v en8 ne ej8 ne gJ8 nec es8 nec gJ8 ne u en8 NEC Tokin ultra low esr
Text: PS/G Single Digit ESR / RoHS Compliant Series • FEATURE • Lead-free type. RoHS Compliant. • Extreme low ESR 7mhom and excellent noise absorption performance. • High capacitance and ultra low ESR based upon on our original Conductive Polymer technology.
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9653TCAVOL11E1002E1
nec en8
NE J eN8
NE K eJ8
ne v en8
ne ej8
ne gJ8
nec es8
nec gJ8
ne u en8
NEC Tokin ultra low esr
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nec en8
Abstract: ne gJ8 NE b eN8 NE K eJ8 NEC Tokin ultra low esr -20/nec en8 ne ej8 nec es8 date code marking NEC
Text: PS/G Single Digit ESR / RoHS Compliant Series í FEATURE b/HDGIUHH W\SH 5R+6 &RPSOLDQW b [WUHPH ORZ (65 PKRP DQG H[FHOOHQW QRLVH DEVRUSWLRQ SHUIRUPDQFH bHigh capacitance and ultra low ESR based upon on our original Conductive Polymer technology. b6DPH RXWHU GLPHQVLRQ DQ FRQYHQWLRQDO 36/ VHULHV
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PSGD0E477M7
PSGD0G477M7
9653TCAVOL13E1106E1
nec en8
ne gJ8
NE b eN8
NE K eJ8
NEC Tokin ultra low esr
-20/nec en8
ne ej8
nec es8
date code marking NEC
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5252 F led
Abstract: 5252 led toshiba 181
Text: New Product Guide Low-Profile LED Lamps TLRME68TG Series When products are selected for use in equipment, mountability is a key factor. Most devices are now mounted using a high-speed surface mounter. To comply with this requirement, Toshiba has introduced
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TLRME68TG
5252 F led
5252 led
toshiba 181
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U1FWJ44P
Abstract: I-FLAT PACKAGE
Text: Schottky Barrier Diodes NEW PRODUCT GUIDE The U3FWK42 is a commercial Schottky barrier diode SBD based on sub-micron trench technology. The U3FWK42 seeks to improve on the existing trade-off between forward voltage (VF) and instantaneous reverse current (IR) in Schottky barrier diodes.
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U3FWK42
U3FWK42
U1FWJ44P
I-FLAT PACKAGE
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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Untitled
Abstract: No abstract text available
Text: SIEMENS Intelligent Sixfold Low-Side Switch TLE 4226 G Bipolar-IC Features • • • • • • • • • • • Quad 50 mA outputs Dual 500 mA outputs Operating range Vs = 5 V ± 5 % Output stages with power limiting Open-collector outputs Shorted load protected within operating range
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067000-A9118
P-DSO-24-3
3Sb05
IE001153
fl235b05
flE35
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tl 4226 G
Abstract: PL021
Text: National Semiconductor DM74197 Presettable Binary Counters General Description The ’ 197 ripple counter contains divide-by-two and divideby-eight sections which can be combined to form a modulo16 binary counter. State changes are initiated by the tailing
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DM74197
modulo16
TL/F/9784-2
TL/F/9784-3
tl 4226 G
PL021
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11PM104
thyristor TAG 8506
nais inverter vf 7f operation manual
922AA1Y-A4P
optek A400 817
Sprague 513D
sprague 926c
Sprague 195P
Rapa relay 12vdc
triac tag 8948
Mascot 719
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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tl 4226 G
Abstract: No abstract text available
Text: ^National l Semiconductor U 54F/74F280 9-Bit Parity Generator/Checker General Description Features The ’F280 is a high-speed parity g e n e ra to r/ch e cke r th a t ac- • G uaranteed 4000V m inim um ESD prote ction c e pts nine bits o f input d ata and d e te cts w he th e r an even or
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54F/74F280
tl 4226 G
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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mic 4227
Abstract: T8614
Text: ÛUALLTY SEMICONDUCTOR INC 41E D QSFCT861/2/3/4T, • 74bbflD3 0 0 G 0 7 S G 1 ■ 2 S I 2861/2/3/4T T ~ 5 2 r 3 & ~ l3 Q S 54/74F C T 861T High Speed CMOS Bus Interface Q qs54 /74 fc t 862 t SiïîiïiESïSSïï 9 & 10-bit Transceivers Q S 54/74F C T 864T
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74bbflD3
QSFCT861/2/3/4T,
2861/2/3/4T
10-bit
54/74F
2862T
2863T
mic 4227
T8614
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2N7080
Abstract: No abstract text available
Text: 2N7080 C T SiEconix JJm in c o rp o ra te d P-Channel Enhancement Mode Transistor TO -254A A Herm etic Package TOP VIEW o PRODUCT SUMMARY V BR DSS (V) rDS(ON) (Cl) •d (A) -20 0 0.500 -9 .5 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1
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2N7080
-254A
2N7080
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