BUK10B-50US
Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic
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7110fl2b
BUK106-50L7S
BUK106-50LP/SP
BUK106-50L/S
BUK106-50I7S
BUK10B-50US
philips ldh
d6506
BUK106-50L
BUK106-50S
buk106
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K2025
Abstract: k202 uk202
Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK202-50X
100\is
K2025
k202
uk202
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected logic level power
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BUK101-50GL
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transìstor BUK106-50L/S Logic level TOPFET_ BUK106-50LP/SP DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general
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BUK106-50L/S
BUK106-50LP/SP
BUK106-50L
BUK106-50S
BUK106-5GL/S
BUK106-50US
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fe,TE » • bbS 3 R 31 DD 3 Q 3 SS b 7 T « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and
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BUK101-50DL
Iisc/ltsa25
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100PD
Abstract: BUK102-50GS T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7 1 1 0 0 2 b 0DL.3Ö3M bSO « P H I N Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION BUK102-50GS QUICK REFERENCE DATA Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended
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7110fl2t
K102-50GS
lISL/lISL25rC
BUK102-SQGS
100PD
BUK102-50GS
T0220AB
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diode ESM 182
Abstract: RD25C diode ESM 179
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2508DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
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BU2508DW
100-Pt/rD25C=
diode ESM 182
RD25C
diode ESM 179
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK110-50GS
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f04u
Abstract: No abstract text available
Text: k 1 TELEFUNKEN E L E C T R O N IC 1?E . A E G 'W •¡nULKFÜÜKlKiiM electronic Cmm1khAO og>is D ■ û'JSDO'ïb 0 0 0 û 7 4 b TSUS 5411 CORP ■ T * i_Lf — 11 I * ^*1 *1 GaAs Infrared Diodes In 5 mm Cases Application: Radiation source in near infrared range
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Untitled
Abstract: No abstract text available
Text: N ANER P H ILIP S /D IS C R E TE bRE D • bbSBRBl QQBQBbB 7Ub M A P X Product Specification Philips Sem iconductors BUK101-50GL PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic
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BUK101-50GL
S3T31
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS DESCRIPTION Monolithic temperature and overtoad protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK100-50GS
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BUK101-50DL
Abstract: T0220AB buk101 transistor BUK101
Text: N APIER P H I L I P S / D I S C R E T E fc.'ìE T> m LbSBIBl QD3D3SS b?T • APX Philips Semiconductors Product Specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and
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BUK101-50DL
BUK101-50DL
Iiso/Iiso25-C
sl25-C
T0220AB
buk101
transistor BUK101
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BUK100-50GS
Abstract: T0220AB buk100-30gs
Text: PHILIPS INTERNATIONAL fc.SE D • 711DÖ2L ÜOti37âE 4T2 HIP H IN Product Specification Philips Semiconductors BUK100-50GS PowerMOS transistor TOPFET QUICK REFERENCE DATA DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended
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37fl2
BUK100-50GS
WIIS25
T0220AB
buk100-30gs
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general
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BUK104-50L/S
BUK104-50LP/SP
BUK104-50L
BUK104-50S
BUK104-50L/S
UK104-50
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BU2532AW
Abstract: BU2532
Text: Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended tor use in horizontal deflection circuits of high resolution monitors.
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BU2532AW
TmbS25
1E-06
IE-04
IE-02
BU2532AW
BU2532
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ403AX
100-PD/PD
200nH
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Fk capacitor philips
Abstract: No abstract text available
Text: Philips Semiconductors Product SDecificatlon PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other
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BUK109-50DL
Fk capacitor philips
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K8013P
Abstract: K8013
Text: TELEFUNKEN ELECTRONIC W fl^EOO^b QGQ7761 1 • AL66 ì> 'T - m - s ? K 8013 P TTlDJIIFilSNlKlK electronic Crtdtrve Technologies Optically Coupled Isolator Construction: Applications: Emitter; GaAs IR Emitting Diode Detector: Monolithic integrated circuit consists of:
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QGQ7761
D--09
0D077
K8013P
K8013
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