PSS-04-103
Abstract: saab space packet wire TME 87 PSS-04-151 P-ASIC-NOT-00122-SE PSS-04-106 K1784 TME 57 PSS-04-107 SAAB
Text: Saab Space AB Dokument ID Document ID Frisläppt datum Date Released Utgåva Issue Informationsklass Classification P-ASIC-NOT-00122-SE 2007-04-23 12 Company Restricted Sida Page 2 SUMMARY The SCTMTC ASIC User's Manual defines how the SCTMTC ASIC is to be used.
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P-ASIC-NOT-00122-SE
ESA/C/290,
PSS-04-103
saab space packet wire
TME 87
PSS-04-151
P-ASIC-NOT-00122-SE
PSS-04-106
K1784
TME 57
PSS-04-107
SAAB
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diode y4p
Abstract: MTD20N03HDL MJ200
Text: MOTOROLA SEMICONDUCTOR TECHN!GAL DATA Product Preview HDTMOSTM E-FETTM High Density Power FET MTD20N03HDL This advanced high-cell density HDTMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also
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MTD20N03HDL
20Adc,
diode y4p
MTD20N03HDL
MJ200
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IDQ25186
Abstract: MA721 VSS1641NC IMX72 Li-49 39NC60 motorola bq50
Text: Order ttis document by 5VFPMB72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1Mx72 DRAM Dual-In-Line Memory Module DIMM 5 V, FPM, Buffered For Error Correction Code Applications 8 Megabyte . JEDEC–Standard ● Single 5 V Power Supply, ~L_Compatible ● Fast Page Mode (FPM)
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5VFPMB72D/D
1Mx72
MA721
BJ48TADG60
140N1-2
5VFPMB72D~
IDQ25186
VSS1641NC
IMX72
Li-49
39NC60
motorola bq50
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saab space packet wire
Abstract: 7693A tme 126 AT7909E LA 7693 AT7909EKA-E CPDU MH1RT SMART ASIC 197 telemetry command protocol
Text: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses
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16-bit
256-pin
saab space packet wire
7693A
tme 126
AT7909E
LA 7693
AT7909EKA-E
CPDU
MH1RT
SMART ASIC 197
telemetry command protocol
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TME 87
Abstract: tme 126
Text: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses
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16-bit
256-pinerves
TME 87
tme 126
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tme 126
Abstract: T092 ZRA125 B25C tme+126
Text: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ZRA125 \ L ISSUE 1- OCTOBER 1995 FEATURES DEVICE DESCRIPTION The ZRA125 uses a bandgap circuit design to achieve a precision micropower voltage reference of 1.25 volts. The device is available in small outline surface mount packages, ideal
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ZRA125
30pprTv
ZRA125
5011Aand
2002040w
tme 126
T092
B25C
tme+126
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tme 126
Abstract: transistor TT 2442 MGW12N120D 3EML
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged
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MGW12N120D/D
MGW12N120DID
tme 126
transistor TT 2442
MGW12N120D
3EML
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AVR 32BIT
Abstract: AT90SC19264RC AT90SC6404RT CRC-16 ISO7816 SA10 SF10 TPG0053A trojan uv sim card cloning device
Text: General Business Use AT90SC6404RT Security Target Lite General Business Use TPG0053A 24 Nov 04 Atmel makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors
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AT90SC6404RT
TPG0053A
TPG0053A
24Nov04
AVR 32BIT
AT90SC19264RC
CRC-16
ISO7816
SA10
SF10
trojan uv
sim card cloning device
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MA644CT10TADG60
Abstract: TK 69 TSOP QN90
Text: Order thie document by3VFPMU64D~ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4Mx64 I DRAM Dual-In-Line Memory Module DIMM 3.3 V, FPM, Unbuffered I I 32 Megabyte ● JEDEC–Standard ● Single 3.3 V Power Supply, LWL<ompatible 168–Lead Dual–In-Line ● Memory Module (DIMM)
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by3VFPMU64D~
4Mx64
MA644CT10TADG60
MA644CT1OT#
MA644CT1
OTADG60
OTADG70
S0217.
3VFPMU64DM
MA644CT10TADG60
TK 69 TSOP
QN90
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tme 126
Abstract: MGW12N120 IC9012 Bipolar WPC
Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.
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MGW12N120
O-247
10USminimum
tme 126
MGW12N120
IC9012
Bipolar WPC
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MC68HCO5
Abstract: MC68HC058 MC68HCD Elap 72 pin MAA 723
Text: I: I : . L rrA3 *0+’ MC68HC05i8 P & ADVANCE INFORMATION @ MOTOROLA TMs document contiins inforfi~tiorihn a new product Specifications and information herein are subjeti to change without notice. .! .\\, .>. ,.:$ .,1.:.$ . .>,+. ‘~f~ -:t, -, ,>.i\.!
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MC68HC05i8
88Tanners
4-32-l.
MC68HCO5
MC68HC058
MC68HCD
Elap 72
pin MAA 723
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tme 126
Abstract: No abstract text available
Text: HB56UW272E-7B/8B 2,097,152-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8BYTE DIMM HITACHI Preliminary - Rev. 0.0 Feb. 02, 1996 Description The HB56UW272E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been
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HB56UW272E-7B/8B
152-Word
72-Bit
168-pin
HB56UW272E
16-Mbit
HM51W17805BTT)
16-bit
74LVT16244)
tme 126
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tme 126
Abstract: TME 87 I 24C026 s/ksmh12/2.27/30/24C0G
Text: HB56HW164DB-6B/7B 1,048,576-Word x 64-Bit High Density Dynamic RAM Module HITACHI Preliminary Rev 0.0 Apr. 18, 1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module S.O.DIMM , mounted 4 pieces of 16-Mbit DRAM (HM51W16165BTT) sealed in TSOP package and 1
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HB56HW164DB-6B/7B
576-Word
64-Bit
HB56HW164DB
16-Mbit
HM51W16165BTT)
24C0G)
TheHB56HW164-DB
H356HW164DB
is144-pin
tme 126
TME 87 I
24C026
s/ksmh12/2.27/30/24C0G
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Untitled
Abstract: No abstract text available
Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s
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EDI8F64128C
128KX64
EDI8F64128C
128Kx8
EDI8F64128C15MDC
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
EDBF864128C
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Untitled
Abstract: No abstract text available
Text: EDI8F32258C 1256Kx32 SRAM Module fe a tu re s 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static The EDI8F32258C is a high speed 8 megabit Static RAM Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times
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EDI8F32258C
1256Kx32
256Kx32
EDI8F32258C
128Kx8
323G114
EDBF32258C
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939 Processor Functional
Abstract: RT611 R924
Text: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.
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MC68030
M68000
939 Processor Functional
RT611
R924
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MC68030
Abstract: tme 126 M68000 MC68020 MC68851 939 Processor Functional
Text: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.
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MC68030
M68000
tme 126
MC68020
MC68851
939 Processor Functional
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TME 87
Abstract: tme 126 BSMD BSMD-5a
Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 npeAOxpaHMTenu SMD pa3Mepa 1206 npeflOxpaHMTenM SMD, Tnnopa3Mep 1206, o n e H b 6 b iC T p b ie , c hh3khm conpoTHane- HHewi, repMeTMHHNe. flnana30H pa6oHnxTeMnepaTyp To k pacqenneHHE TewmepaTypa bo^ hobom na^KM
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flnana30H
AC/300
TME 87
tme 126
BSMD
BSMD-5a
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5998CCSF
Abstract: No abstract text available
Text: SMA Phase Adjustable In-Series Adapters Female to Male Phase Adjustable Adapter GDI Part No. Max. VSWR 5018CCSF See Graph Below; D C -26.0 GHz 1 Center conductor is captivated rr,e * s- -J~! • “ 'YigCCSF is a coaxial phase -> “ a J i!'-er: inserted in an SMA
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5018CCSF
5998CCSF
5998CCSF
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TME 87
Abstract: 1ZD12 tme 126 30 oc9 002
Text: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based
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256KB
66MHz
CELP2X80CS3Z48
EDI8F6432C
32Kx64
EDI8F6432C
EDI8F6432C15MDC
EDI8F6432C20MDC
TME 87
1ZD12
tme 126
30 oc9 002
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OP145C
Abstract: K6550
Text: @ OPTEK Product Bulletin OP145A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP145A, OP145B, OP145C, OP145D Features • Wide irradiance pattern • Mechanically and spectrally matched to the OP555 and OP565 series devices • Variety of power ranges
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OP145A
OP145A,
OP145B,
OP145C,
OP145D
OP555
OP565
OP145C
K6550
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opo7c
Abstract: 0P07C 0P-07C 0p07 OP07CN8 op 070 0P07D 0P-07 opo7c0cto u1 741 opamp
Text: X X u n e A B TECHNOLOGY _ QP-07 Precision Operational Amplifier F€OTUR€S DCSCRIPTIOfl • Guaranteed 2 5 m V max. Offset Voltage ■ Guaranteed 0.6/zV/°C max. Offset Voltage Drift with Temperature ■ Excellent 1.0/xV/Month max. Long Term Stability
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QP-07
0P-07
5VMI55
0C40UM
100CC/W
opo7c
0P07C
0P-07C
0p07
OP07CN8
op 070
0P07D
opo7c0cto
u1 741 opamp
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opo7c
Abstract: 0P07C
Text: ÆL—f r r u i m i TECHNOLOGY _QP-07 Precision Operational Amplifier F€flTUR€S DCSCRIPTIOn • Guaranteed 25^ V max. Offset Voltage ■ Guaranteed 0.6/zV/°C max. Offset Voltage Drift with Temperature ■ Excellent I.O^V/Month max. Long Term Stability
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QP-07
0P-07
opo7c
0P07C
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TME 87 0D
Abstract: No abstract text available
Text: SIEMENS 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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64-Bit
72-Bit
168pin
HYM64V8005GU-50/-60
HYM64V8045GU-50/-60
HYM72V8005GU-50/-60
HYM72V8045GU-50/-60
DM168-13
TME 87 0D
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