Untitled
Abstract: No abstract text available
Text: NTB8N50 Preferred Device Product Preview TMOS 7 E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 8 AMPERES 500 VOLTS RDS on = 0.75 Ω This advanced TMOS E–FET is designed to withstand high energy
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NTB8N50
r14525
NTB8N50/D
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NTB10N40
Abstract: NTB10N40T4
Text: NTB10N40 Preferred Device Product Preview TMOS 7 E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.5 Ω This advanced TMOS E–FET is designed to withstand high energy
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NTB10N40
r14525
NTB10N40/D
NTB10N40
NTB10N40T4
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Untitled
Abstract: No abstract text available
Text: NTP10N40 Preferred Device Product Preview TMOS 7 E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.5 Ω This advanced TMOS E–FET is designed to withstand high energy
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NTP10N40
r14525
NTP10N40/D
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Untitled
Abstract: No abstract text available
Text: NTP8N50 Preferred Device Product Preview TMOS 7 E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 8 AMPERES 500 VOLTS RDS on = 0.75 Ω This advanced TMOS E–FET is designed to withstand high energy
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NTP8N50
r14525
NTP8N50/D
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MTP71040L
Abstract: AN569 pd 242
Text: MOTOROLA Order this document by MTP71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP71040L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high
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MTP71040L/D
MTP71040L
MTP71040L
AN569
pd 242
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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IRF540 motorola
Abstract: irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.070 OHMS This advanced TMOS power FET is designed to withstand high
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IRF540/D
IRF540
IRF540 motorola
irf540 for pwm
IRF540 application
irf540 "27 MHz"
IRF540
u c transistor
irf540 27 MHz
mosfet transistor 400 volts.100 amperes
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MTP55N06Z
Abstract: TMOS E-FET
Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to
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MTP55N06Z/D
MTP55N06Z
MTP55N06Z
TMOS E-FET
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TMOS E-FET
Abstract: MTP55N10EL
Text: MOTOROLA Order this document by MTP55N10EL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP55N10EL TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 100 VOLTS RDS on = 0.026 W This advanced TMOS E–FET is designed to withstand high
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MTP55N10EL/D
MTP55N10EL
TMOS E-FET
MTP55N10EL
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP60N10E7L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high
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MTP60N10E7L/D
MTP60N10E7L/D
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AN569
Abstract: MTB29N15E SMD310 S 170 MOSFET TRANSISTOR
Text: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high
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MTB29N15E/D
MTB29N15E
AN569
MTB29N15E
SMD310
S 170 MOSFET TRANSISTOR
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP14N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP14N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.160 OHM This advanced TMOS E–FET is designed to withstand high
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MTP14N10E/D
MTP14N10E
MTP14N10E/D*
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ultra low idss
Abstract: pd 242 AN569 MTP60N10E7L transistor 600 volts.50 amperes
Text: MOTOROLA Order this document by MTP60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP60N10E7L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high
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MTP60N10E7L/D
MTP60N10E7L
ultra low idss
pd 242
AN569
MTP60N10E7L
transistor 600 volts.50 amperes
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NT 407 F MOSFET TRANSISTOR
Abstract: AN569 MTP29N15E SMD310
Text: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high
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MTP29N15E/D
MTP29N15E
NT 407 F MOSFET TRANSISTOR
AN569
MTP29N15E
SMD310
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PDF
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irf540 for pwm
Abstract: IRF540 T1 IRF540 TMOS Power FET irf540 27 MHz IRF540 application irf540d motorola 304 TRANSISTOR mosfet IRF540
Text: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.077 OHMS This advanced TMOS power FET is designed to withstand high
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IRF540/D
IRF540
irf540 for pwm
IRF540
T1 IRF540
TMOS Power FET
irf540 27 MHz
IRF540 application
irf540d
motorola 304
TRANSISTOR mosfet IRF540
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motorola power FET
Abstract: MC33285 KL30 MOTOROLA SCR driver Zener Diode 7v
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC33285 Prototype Information Automotive Dual High Side TMOS Driver HIGH SIDE TMOS DRIVER The MC33285 is a dual high side TMOS driver designed for use in the harsh automotive switching applications. The purpose of the MC33285 is to drive two power n-channel FETs in
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MC33285
MC33285
motorola power FET
KL30
MOTOROLA SCR driver
Zener Diode 7v
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MTD1P50E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD1P50E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTD1P50E TMOS E-FET. High Energy Power FET Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 Ω This advanced high voltage TMOS E–FET is designed to
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MTD1P50E/D
MTD1P50E
MTD1P50E/D*
MTD1P50E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 16 mΩ This advanced high voltage TMOS E–FET is designed to
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MTP55N06Z/D
MTP55N06Z
MTP55N06Z/D*
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irfd220
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD220 IRFD223 TMOS Field Effect Transistors Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline T TMOS TMOS FET TRANSISTORS
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IRFD220
IRFD223
IRFD223
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for
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OT-223
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MTH13N50
Abstract: 3N50 motorola MTH13N50 13N50 MTH15N40 MTH13N45 transistor 13n50 5N35 MTM4N35 DS3651
Text: P.O. BOX 20912 • PHOENIX, ARIZONA 85036 MTH13N45 MTH13N50 MTH15N35 MTH15N40 D esign er’s D ata Sheet 13 and 15 AMPERES N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FETs These TMOS Power FETs are designed for medium voltage,
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13N45
13N50
15N35
15N40
MTH13N45/D
MTH13N45/D
MTH13N50
3N50
motorola MTH13N50
MTH15N40
MTH13N45
transistor 13n50
5N35
MTM4N35
DS3651
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PDF
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transistor te 2305
Abstract: P8000
Text: MOTOROLA Order this document by MTP40N1OE/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0-04 OHM This advanced TMOS E-FET is designed to withstand high
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MTP40N1OE/D
transistor te 2305
P8000
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1.7 OHM MAX This TMOS medium power field effect transistor is designed for
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MMFT960T1
OT-223
b3b7255
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PDF
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