AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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IRF540 motorola
Abstract: irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.070 OHMS This advanced TMOS power FET is designed to withstand high
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IRF540/D
IRF540
IRF540 motorola
irf540 for pwm
IRF540 application
irf540 "27 MHz"
IRF540
u c transistor
irf540 27 MHz
mosfet transistor 400 volts.100 amperes
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PDF
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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PDF
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irf540 for pwm
Abstract: IRF540 T1 IRF540 TMOS Power FET irf540 27 MHz IRF540 application irf540d motorola 304 TRANSISTOR mosfet IRF540
Text: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.077 OHMS This advanced TMOS power FET is designed to withstand high
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IRF540/D
IRF540
irf540 for pwm
IRF540
T1 IRF540
TMOS Power FET
irf540 27 MHz
IRF540 application
irf540d
motorola 304
TRANSISTOR mosfet IRF540
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Untitled
Abstract: No abstract text available
Text: NTB8N50 Preferred Device Product Preview TMOS 7 E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 8 AMPERES 500 VOLTS RDS on = 0.75 Ω This advanced TMOS E–FET is designed to withstand high energy
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NTB8N50
r14525
NTB8N50/D
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NTB10N40
Abstract: NTB10N40T4
Text: NTB10N40 Preferred Device Product Preview TMOS 7 E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.5 Ω This advanced TMOS E–FET is designed to withstand high energy
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NTB10N40
r14525
NTB10N40/D
NTB10N40
NTB10N40T4
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PDF
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Untitled
Abstract: No abstract text available
Text: NTP10N40 Preferred Device Product Preview TMOS 7 E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.5 Ω This advanced TMOS E–FET is designed to withstand high energy
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NTP10N40
r14525
NTP10N40/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTP8N50 Preferred Device Product Preview TMOS 7 E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 8 AMPERES 500 VOLTS RDS on = 0.75 Ω This advanced TMOS E–FET is designed to withstand high energy
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NTP8N50
r14525
NTP8N50/D
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BC237
Abstract: MSA1022 msc2295 BF391 "direct replacement"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for
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M218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
BC237
MSA1022
msc2295
BF391 "direct replacement"
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PDF
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AN569
Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high
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MTP12N06EZL/D
MTP12N06EZL
MTP12N06EZL/D*
AN569
MTP12N06EZL
mosfet transistor 400 volts.100 amperes
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AN569
Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. High Energy Power FET MTP12N06EZL N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high
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MTP12N06EZL/D
MTP12N06EZL
MTP12N06EZL/D*
AN569
MTP12N06EZL
mosfet transistor 400 volts.100 amperes
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PDF
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MTP71040L
Abstract: AN569 pd 242
Text: MOTOROLA Order this document by MTP71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP71040L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high
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MTP71040L/D
MTP71040L
MTP71040L
AN569
pd 242
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MTP55N06Z
Abstract: TMOS E-FET
Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to
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MTP55N06Z/D
MTP55N06Z
MTP55N06Z
TMOS E-FET
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TMOS E-FET
Abstract: MTP55N10EL
Text: MOTOROLA Order this document by MTP55N10EL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP55N10EL TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 100 VOLTS RDS on = 0.026 W This advanced TMOS E–FET is designed to withstand high
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MTP55N10EL/D
MTP55N10EL
TMOS E-FET
MTP55N10EL
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AN569
Abstract: MTB29N15E SMD310 S 170 MOSFET TRANSISTOR
Text: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high
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MTB29N15E/D
MTB29N15E
AN569
MTB29N15E
SMD310
S 170 MOSFET TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP14N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP14N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.160 OHM This advanced TMOS E–FET is designed to withstand high
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MTP14N10E/D
MTP14N10E
MTP14N10E/D*
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for
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OCR Scan
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OT-223
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MTH13N50
Abstract: 3N50 motorola MTH13N50 13N50 MTH15N40 MTH13N45 transistor 13n50 5N35 MTM4N35 DS3651
Text: P.O. BOX 20912 • PHOENIX, ARIZONA 85036 MTH13N45 MTH13N50 MTH15N35 MTH15N40 D esign er’s D ata Sheet 13 and 15 AMPERES N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FETs These TMOS Power FETs are designed for medium voltage,
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13N45
13N50
15N35
15N40
MTH13N45/D
MTH13N45/D
MTH13N50
3N50
motorola MTH13N50
MTH15N40
MTH13N45
transistor 13n50
5N35
MTM4N35
DS3651
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1.7 OHM MAX This TMOS medium power field effect transistor is designed for
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OCR Scan
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MMFT960T1
OT-223
b3b7255
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PDF
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irfd220
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD220 IRFD223 TMOS Field Effect Transistors Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline T TMOS TMOS FET TRANSISTORS
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OCR Scan
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IRFD220
IRFD223
IRFD223
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET
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OCR Scan
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OT-223
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PDF
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FT-107
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 250 mA, 200 VOLTS R D S o n = 1 4 0HM MAX This TMOS medium power field effect transistor is designed for
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OCR Scan
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MMFT107T1
OT-223
b3b7255
GGT3744
FT-107
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP12N06EZL N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = °-180 OHM This advanced TMOS power FET is designed to withstand high
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OCR Scan
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MTP12N06EZL/D
MTP12N06EZL
21A-06,
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PDF
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transistor te 2305
Abstract: P8000
Text: MOTOROLA Order this document by MTP40N1OE/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0-04 OHM This advanced TMOS E-FET is designed to withstand high
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OCR Scan
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MTP40N1OE/D
transistor te 2305
P8000
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PDF
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