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    str 4479

    Abstract: No abstract text available
    Text: TMS427800, TMS427800P 2 097152 WORD BY 8-BIT LOW VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS27&-JANUARY 1993 Organization. . . 2 097 152 x 8 Single 3.3-V Power Supply +0.3 V Tolerance Performance Ranges: DE PACKAGE* DZ PACKAGEt (TOP VIEW) (TOP VIEW) (tRAC) (tCAC)


    OCR Scan     		TMS427800, TMS427800P SMKS27 427800/P-70 427800/P-80 TMS427800 SMKS278-JANUARY1993 str 4479 PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS416800A, TMS417800A TMS426800A, TMS426800AP, TMS427800A, TMS427800AP 2 097152-WORD BY 8-BIT HIGH-SPEED DRAMS S M K S 8 8 8 A - AU GU ST 1 9 9 6 -R E V IS E D MAY 1997 This data sheet is applicable to all TMS41x800As and TMS42x800A/Ps symbol­ ized by Revision “E" and subsequent revisions


    OCR Scan     		TMS416800A, TMS417800A TMS426800A, TMS426800AP, TMS427800A, TMS427800AP 097152-WORD TMS41x800As TMS42x800A/Ps 1X800A-50 PDF

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference PDF