th 20594
Abstract: ix 0640 93459 1515 38940 74*214 15351 75542 83450 2N 8904 jis z 0237
Text: ATTACHED TABLES IX. ATTACHED TABLES 1. ATTACHED TABLES 1.1 AQL SAMPLING TABLE 1.2 LTPD SAMPLING TABLE 1.3 PROBABILITY DENSITY OF NORMAL DISTRIBUTION 1.4 UPPER PROBABILITY OF NORMAL DISTRIBUTION 1.5 PERCENT POINTS OF NORMAL DISTRIBUTION 1.6 POISSON DISTRIBUTION PROBABILITY
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nec fs 2181
Abstract: K0462 B0886 TC-6169 PA33 T108 S0742 J-03988 PJA 0836
Text: v — S • 5 ^ — K NEC C o m p o u n dT ra n sisto r m ^=r!\rfHf S i/trt tN PN ib ° 'J= AA1 F4Z ft ft ^ - f i : mm O /M 7 x i £ f i t £ | * i / l L T ^ i 1 _0 ( R i = 22 kQ) o AN1F4Z 3 > 7° IJ / > t ( T a = 2 5 * £ * * ! ! * : £ * & iM 9 U T i i f f l T '£ ¿ 1 %
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OCR Scan
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CycleS50
SC-43B
nec fs 2181
K0462
B0886
TC-6169
PA33
T108
S0742
J-03988
PJA 0836
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PDF
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TC-7986A
Abstract: 2SK2112 CMS01 7986A diode lt 0236
Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,
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OCR Scan
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2SK2112
oeTi14
a-Ti4S24#
TC-7986A
CMS01
7986A
diode lt 0236
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UP1707
Abstract: irf 1402 UPD17071GB-011 GB-011 ATID ECJ YB HX 711 oasis TI07 TV10
Text: h B f ë MOS ÜÜISlfê MOS Integrated Circuit j n P D 1 7 7 1 G B - 1 1 fe y MpJIÍ FM, AM, S W 5 i> ‘^ , TVffl • 3 V h n - 7 Ñ 4 fcfu» h • i / U i f J l / f - y ' 7 • - 7 - f JUPD17071GB-011 l i è t i #
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OCR Scan
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UPD17071GB-011
UP1707
irf 1402
UPD17071GB-011
GB-011
ATID
ECJ YB
HX 711
oasis
TI07
TV10
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PDF
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pc574j
Abstract: sh03 5108a T108 HS 1621 UPC-574J XL08 LM 3323
Text: NEC Aà i? T /\f7 * < • 4 — B ipolar A nalog Integ rated C irc u it M PC574J V o lt a g e II M a x im u m R a t in g s T a = 2 5 fê 5e # 10 Iz mA s fi » ÜC * Pd yB ijnL Jt Topt —20—+75 °C ÿB liDL Ä Tstg —40~ °C + D i m e n s io n s (Unit : mm
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OCR Scan
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uPC574J
pc574j
sh03
5108a
T108
HS 1621
UPC-574J
XL08
LM 3323
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PDF
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NEC C959
Abstract: 7KIP C959 2SD1701 PA33 T092 Nec b 616 n471 TN59
Text: '> > ; = ] > Y = ÿ > i> 7 .^ S ilic o n T r a n s is to r 2SD1701 41 m i t 800 m A Î t ' W f l h F E f ^ ^ & « s ìè t t o y — ± : mm 5.2 MAX. h Y 7 4 7" 'J > F > f ê W o Î É V CE (s a t)T "to i ( t a = 25 ° c) a »& s -f- S Ÿ§- -¥• \ÎL
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OCR Scan
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2SD1701
SC-43B
OttOt07-
NEC C959
7KIP
C959
2SD1701
PA33
T092
Nec b 616
n471
TN59
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PDF
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transistor w bh 212
Abstract: SK FN 521 sol 4011 be 2SD1779 TN-6014 TN60 hia 51
Text: •7 s— "S7 • S ' — h - NEC ^ Silicon T ran sisto r 2SD1779 & m M M o « h FE -0 L * ' i f& V CE, „ t) f t w ^ - f i ^ mm) t - f - ' l $1 t L T f t i S T 'i - o hKE= 8 0 0 ~ 3 2 0 0 (a t V CE = 5 .0 V, Ic = 1 .0 A ) V CE(sat) = o / J '^ T * f F
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OCR Scan
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2SD1779
transistor w bh 212
SK FN 521
sol 4011 be
2SD1779
TN-6014
TN60
hia 51
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PDF
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ct 5066
Abstract: 617 610 372 A ST 9727 semelec denso toyota
Text: [sO OPTOELECTHOWICS AUTHORIZED REPRESENTATIVES AND DISTRIBUTORS North American Technical Representatives ALABAMA Com Rep Madison Tel: 256-772-9982 Fax: 256-772-8693 CANADA Cont. Canadian Source Corp Kanata, Ontario Tel: 613-599-5882 Fax: 613-599-5886 INDIANA (Cont.)
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OCR Scan
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PDF
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2SD1780
Abstract: CE 2711 TRANSISTOR 6015 2SD178
Text: 2SD1780 S ilic o n T r a n s is to r N P N i + W Ì : mm 4# i t 7 i t — ^ /} - - o i h FE- ü L ^ i { â V CE(sat)f 1 - i 0 f ' r - ]) > b > Y ÿ > :J X ÿ c o m m t L x M M T t 0 hFE=800~3200 (at VCE= 5.0 V, Ic = 1.0 A) V,CE(sat) = 0.2 V TYP. (at Ic = 1.0 A, IB= 10 mA)
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OCR Scan
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2SD1780
2SD1780
CE 2711
TRANSISTOR 6015
2SD178
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PDF
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PM7540
Abstract: 2sc2275 2SA985 NEC TEA 7540 IC 2SA985 2SC2275A TEA-509 MEB-504 1444A 7824 5A
Text: zr—5?•zS—h x < 7 — ► ^f SiliconPowerTransistors 2SA985,985A/2SC2275,2275A PNP/NPNXkf h=7>i>7.9 NEC 1# £ f7 fé É 2 it o ^ ^ d i^ 6 o - i2 o w / U '« « 7 - 7 > r * > / < ia ^ u ¥ - fâ • mm f t i , { T / / ê iV '0 o h F E . f T * > * M E * > ffl« l/ W j!lV '.
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OCR Scan
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2SA985
85A/2SC2275
985/2SA9
2SC2275/2SC2275A
PWS10
PM7540
2sc2275
2SA985 NEC
TEA 7540 IC
2SC2275A
TEA-509
MEB-504
1444A
7824 5A
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PDF
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LA 7821
Abstract: LM 7821 str wg 753 pj 0266 lu 7821 YCR02 p46ad F7821 NEC 7924 PD78213
Text: J. 8 I I ih Y N E C ^ M os M O S In te g ra te d C ir c u it //PD78212 A ,78213 (A),78214 (A) t f -y h • is > V iV j- 7 7°* v > r ^ P = i V b 0 zL — ^ ¿iPD78212(A), 78213(A), 78214(A) tt, 78K/II -> U- X ' W i S T t . 78K/II v 'J - X l i , ^ Î Æ â R H J : U 1M
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OCR Scan
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uPD78212
uPD78213
uPD78214
78K/II
78K/II
PD78212,
12MHz
333ns(
PD78212
LA 7821
LM 7821
str wg 753
pj 0266
lu 7821
YCR02
p46ad
F7821
NEC 7924
PD78213
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PDF
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transistor A916
Abstract: YC07 2SA916 A916 transistor
Text: Ml ^ _h >u fry N IH ph * an O f * u $ £ a c 3i w FFI FFI FH •ft H*"* p < C< O O s 2 *? / <T> Vr C" C~ 4 * m m pi m ps pif sr sr > < 7] M C O 03 CD O w s O m cjn BA tSD h-H o""1 < < O 0C< O II 11 M II II 1 1 N5 1 1 1 C O tO ]. O 3 3 < < > > < , , , , 1—1 1—1 HH
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OCR Scan
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2SA916
2SC194U
transistor A916
YC07
2SA916
A916 transistor
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PDF
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3e tRANSISTOR
Abstract: TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor
Text: NEC j m + T / v r x — Y = 7 > i > * 9 M O S Field E ffe c t P o w e r T r a n s is t o r A _ 2SK446 N f t ^ ^ < 7 y - ^ M O S F E T > jim m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 4 6 ii, nmm/ p a c k a g e FETT,
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OCR Scan
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2SK446
SK446Ã
Tstg64
0734i28-
075J22
26-/E
3e tRANSISTOR
TT3010
TRANSISTOR XL08
4-0992
XL08
2SK446
SK-446
JE 33
T108
JE 720 transistor
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PDF
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t1c8
Abstract: 2sk459 2SK45 JE 33 T460
Text: NEC m MOS Field E ffe c t P o w e r T r a n s is t o r + T f x r x 2SK459 FET I t f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK459ii, FET ^ • ^ E I/ P A C K A G E DIMENSIONS Unit '•mm T, S JS S D C -D C ^ v a -^, K y - f ^*4: ¿ f w a i i j f f l t L T f
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OCR Scan
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2SK459
2SK459Ã
t1c8
2sk459
2SK45
JE 33
T460
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PDF
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jb 5531
Abstract: JV19 mk 5013 2SA1395 2SC3567 T108 TC-5915 T-25-TS x11A
Text: 5 P — S 7 • 5^— K SEC m '> « ;□> yxor7 S ilic o n P o w e r T ra n s is to r f * T i\ r x 2SC3567 lif f l h'/-? < 7- 2 S C 3 5 6 7 i i i f F i l Ë l ï i X -i v & y ÿ " m t l- 7 > x x n - , X ^ y f > 7 - u J f i U - i ' , 0 H Ï2 IH Jp - fï : m m
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OCR Scan
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2SC3567iifl5iÃ
2SA1395
jb 5531
JV19
mk 5013
2SA1395
2SC3567
T108
TC-5915
T-25-TS
x11A
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PDF
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2SD1491
Abstract: S0426 14s6 RL-50 m1.0425 l0897 u236
Text: NEC Silicon Power Transistor r - 2SD1491Ü 3 ^ ; •X ; y 4 * - K, ’T — K r f êï f é v u / >f ^ # T H i “ - ' . } ; « *HB0 JÊfi! 1mm h > F m) uv h 7 ^ r 8.5 M A X . m i t M t « 2.8 M A X . ~4> 3 2 ± o i t ' t c CM % ft o +1 I T K i t i 7 ) T 'i a ,
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OCR Scan
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2SD1491
PTlTa-25
2SD1491
S0426
14s6
RL-50
m1.0425
l0897
u236
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PDF
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2SK2133
Abstract: 2SK2133-Z MP-25 MP-25Z CMT-10
Text: zr— 'i? NEC ^ • £ /— h M O S ^ -^ 5 e j!j^ /\0r7 - M O S FET M O S Field E ffect P o w e r T ran sistors 2SK2133, 2SK2133-Z N ^ Ÿ T W U /x V -M O S f e t i t f f l 2SK 2133, 2 S K 2 1 3 3 -Z l i N i t :Ê . 7 , < i 7 - MOS FET T 't T * ' U ¡Ü IS
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OCR Scan
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2SK2133,
2SK2133-Z
2SK2133-Z
2SK2133
IEI-620)
MP-25
O-220AB)
MP-25Z
2SK2133
MP-25
MP-25Z
CMT-10
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PDF
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2SA811A
Abstract: 2SC1622A TC5585 SC59 Marking 3D
Text: z r — S 7 • is — h NEC T / \ f y □ > h =7 S ilic o n 7 > ì > 7 * 9 T r a n s is t o r 2SA 811A P N P i M =1 > h f ê / ü î & i ü f'J i # ± i « il # i t ^ - f ô ! mm o >), 7 ' U .y K I C f f l t L T f t i S T " 1 - : ' ^ 2 . 8 ± 0.2 O [ÌìJÌL 'iC ìÌi.- H ¥i ,lImi l - 7Ì)i
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OCR Scan
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2SA811A
2SC1622A
SC-59
2SA811A
TC5585
SC59 Marking 3D
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PDF
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25 RIA 120 SCR
Abstract: 8P2M
Text: 5 s — S ? • S / — h Thyristors 8 8P2M, 8 P 4 M i ¥ ± ^ > * ^ 8 A ¿7 p A •"£ — ) V y- F K S C R K SCR *W H I itznm 200 V, T", Ì M H I I t 0- ? * 7 f f i ± I mm) 10.5 MAX. 4.r3 MAX. 400 V T"i“0 r « « o TO-220AB ^ - ) V K^-v ^ y ( ; J ; 0 , ^#±ÌM ftJT"t0
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OCR Scan
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mvMiitztim200
O-220AB
UL94V-0)
25 RIA 120 SCR
8P2M
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PDF
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uPA500T
Abstract: uPA501t s 452-2 IC-8180 PA501T PA501 upa500 TN 0749
Text: NEC i — S 7 ’ S /— h '> IJ =1 > = 7 h > S ilic o n T r a n s is to r / P N P x ,u PA 5 0 1 T ! i , + 1 J =1 > ¿ P A 5 5 \ î > 2 0 S& b ^ ( ^ - { î : mm) t 'ÿ y - ^ X ^ ÿ ^ S S ;IÎW IP ]± , | g 3 X h c o H f i J M d ìì iK .0.16 Îg;i, L^ -t„
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OCR Scan
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uPA500T
uPA501t
s 452-2
IC-8180
PA501T
PA501
upa500
TN 0749
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PDF
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L0565
Abstract: L0988 2SJ178 IR TK 19 544 ScansUX882
Text: NEC i i f / V 7 s— ? • S/— h mos 7 T MOS Field E ffe c t T r a n s is to r 2 S J1 7 8 MOS F E T ¡6 3 LJ$X<1V 51 2SJ178 Ü, P f t * / U f i MOS F E T T", 5 V b Ü i f ê B b 4* X ^ -y f- > y " • f " > < i - y , y i / / ^ K, # AX IC T - ’t 'o w F 7 > f7 i:ilt* to
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OCR Scan
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2SJ178
lj0897
T108-01
L0565
L0988
2SJ178
IR TK 19 544
ScansUX882
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PDF
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transistor F370
Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674
Text: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o
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OCR Scan
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2SC1674
I-125
SC-43
-411l
transistor F370
t430 transistor
T591
transistor T600
t514 TRANSISTOR
ic mt 5380
transistor T700
ir43
2SC1674
Transistor 2sC1674
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PDF
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UPD74HC238C
Abstract: js 2617 UPD74HC238G RUJ 17 33 PD74HC238GS n 10221 UPD74HC P16C l0565 PD74HC238G
Text: SEC A m ^ ¡ — 5 ? • 5 / — h M O S jftffi[II]S § MOS Integrated Circuit M ^ T i v r x ¿¿PD74HC238 3-TO-8 LINE DECODER/DEMULTIPLEXER c M o s m it n u fè // P D 7 4 H C 2 3 8 Ü , i t i M C M O S Ì l i p n :s "/ J ~7 r S > <F>— m t L T W f g ? t l t z è C O T , 3 -TO -8 L I N E
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OCR Scan
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uPD74HC238
484Stfe
UPD74HC238C
js 2617
UPD74HC238G
RUJ 17 33
PD74HC238GS
n 10221
UPD74HC
P16C
l0565
PD74HC238G
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PDF
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10285
Abstract: ge rr9 PA33 PWS350 si8118 nec ap1l2q
Text: C o m p o u n d A Σ # iF * 3 ;S é P N P x Y * 9 * i s 7 } v m 4# I # fj£ 0 0 .7 A i T ' a i t a K y F 7 ^ î - r ^ i o m ^ ' J — X i ' •; U V at o P T ra n s is to r ; mm 'i - T f r â J t è . T ~ f 0 s U i j A M '? AP1 '> 'J —X —H PI PH A?
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OCR Scan
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SC-43B
PWS10
0262i35-
24wmsw)
10285
ge rr9
PA33
PWS350
si8118
nec ap1l2q
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PDF
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