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    Diodes Incorporated ZXTN25020CFHTA

    TRANS NPN 20V 4.5A SOT23-3
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    DigiKey ZXTN25020CFHTA Digi-Reel 11,506 1
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    ZXTN25020CFHTA Cut Tape 11,506 1
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    Newark ZXTN25020CFHTA Cut Tape 2,500 1
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    Avnet Silica ZXTN25020CFHTA 3,000 28 Weeks 3,000
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    New Advantage Corporation ZXTN25020CFHTA 9,010 1
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    Eaton Bussmann STN254033UL33

    TVS DIODE 3.3VWM 11VC DFN2510L
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    DigiKey STN254033UL33 Digi-Reel 4,800 1
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    STN254033UL33 Cut Tape 4,800 1
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    Sager STN254033UL33 3,000
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    Microchip Technology Inc TN2540N8-G

    MOSFET N-CH 400V 260MA TO243AA
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    DigiKey TN2540N8-G Digi-Reel 4,713 1
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    TN2540N8-G Cut Tape 4,713 1
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    TN2540N8-G Reel 4,000 2,000
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    Mouser Electronics TN2540N8-G 4,161
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    Newark TN2540N8-G Cut Tape 1,280 1
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    Microchip Technology Inc TN2540N8-G Reel 152,000 1 Weeks
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    Bristol Electronics TN2540N8-G 10
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    Quest Components TN2540N8-G 960
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    TME TN2540N8-G 1
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    NAC TN2540N8-G 132,000 1
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    Chip One Stop TN2540N8-G Cut Tape 2,000
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    EBV Elektronik TN2540N8-G 5 Weeks 2,000
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    Master Electronics TN2540N8-G 11,277
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    Diodes Incorporated ZXTN25040DZTA

    TRANS NPN 40V 5A SOT89-3
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    DigiKey ZXTN25040DZTA Cut Tape 3,853 1
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    ZXTN25040DZTA Digi-Reel 3,853 1
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    Newark ZXTN25040DZTA Cut Tape 640 1
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    Bristol Electronics ZXTN25040DZTA 849
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    Avnet Asia ZXTN25040DZTA 8 Weeks 2,000
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    STMicroelectronics TN2540-12G-TR

    SCR 1.2KV 25A D2PAK
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    DigiKey TN2540-12G-TR Cut Tape 829 1
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    TN2540-12G-TR Digi-Reel 829 1
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    Mouser Electronics TN2540-12G-TR 1,932
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    Newark TN2540-12G-TR Cut Tape 1,100 1
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    STMicroelectronics TN2540-12G-TR 1,932 1
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    TME TN2540-12G-TR 1
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    Avnet Silica TN2540-12G-TR 2,000 16 Weeks 1,000
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    EBV Elektronik TN2540-12G-TR 16 Weeks 1,000
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    TN25 Datasheets (72)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN25 STMicroelectronics 25A SCRs Original PDF
    TN2501 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2501 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2501N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2501N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 18V 400MA SOT89-3 Original PDF
    TN2501ND Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2504 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2504N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2504N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2504N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 0.89A SOT89-3 Original PDF
    TN2504ND Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2504ND Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2510 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2510N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2510N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2510N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 730MA SOT89-3 Original PDF
    TN2510ND Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2510ND Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2511 ifm efector ELECTRONIC TEMPERATURE SENSOR; 1 Original PDF
    TN2520N8-G Supertex P-Channel Enhancement Mode Vertical DMOS FETs Original PDF

    TN25 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TN2504

    Abstract: No abstract text available
    Text: TN2504 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2504 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    TN2504 TN2504 A020309 PDF

    TN2535

    Abstract: No abstract text available
    Text: TN2535 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2535 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    TN2535 TN2535 A020309 PDF

    SCR 25A 600V

    Abstract: TN25 SCR TN 22 1500
    Text: TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT RMS 25 A VDRM/VRRM 600 to 1000 V G K A A IGT 40 mA K A G K DESCRIPTION D2PAK (TN25-G) The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a


    Original
    TYNx25 TN25-G) O-220AB SCR 25A 600V TN25 SCR TN 22 1500 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2524 125pF DSFP-TN2524 B111908 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2504 125pF DSFP-TN2504 A091208 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2524 125pF TN2524 O-243AA OT-89) O-243, DSFP-TN2524 B122707 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT RMS 25 A VDRM/VRRM 600 to 1000 V G K A A IGT 40 mA K A G K DESCRIPTION D2PAK (TN25-G) The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a


    Original
    TYNx25 TN25-G) O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling


    Original
    TN2524 125pF DSFP-TN2524 B022309 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device


    Original
    TN2529 TN2529 125pF DSFP-TN2529 A091608 PDF

    RCM4000

    Abstract: No abstract text available
    Text: TN255 Rabbit 4000 Advanced 16-bit Mode Auxiliary I/O Bug A bug has recently been identified in the Rabbit 4000 that can result in inadvertently executing a data byte as if it were an instruction under certain circumstances. This will only occur when the advanced 16-bit


    Original
    TN255 16-bit 16-bit RCM4000 PDF

    fet sot-89 marking code

    Abstract: FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2504 125pF DSFP-TN2504 A012409 fet sot-89 marking code FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504 PDF

    TN2535

    Abstract: TN2535N8
    Text: TN2535 TN2535 Low Threshold New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 10Ω 2.0V 1.0A TN2535N8 * Same as SOT-89. TO-243AA* Product supplied on 2000 piece carrier tape reels.


    Original
    TN2535 TN2535N8 OT-89. O-243AA* 200mA, 200mA TN2535 TN2535N8 PDF

    p-channel DMOS

    Abstract: P024 TN2502ND TN2504 TN2504ND TP2502N8
    Text: TN2502/TN2504 TN2502 TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* DICE† 20V 1.0Ω 1.6V 4.0A — TN2502ND 40V 1.0Ω 1.6V 4.0A


    Original
    TN2502/TN2504 TN2502 TN2504 O-243AA* TN2502ND TP2502N8 TN2504ND OT-89. p-channel DMOS P024 TN2502ND TN2504 TN2504ND TP2502N8 PDF

    TL25/15/10 3E6

    Abstract: PHILIPS toroidal core 3f3 PHILIPS toroidal core 3c90 PHILIPS toroidal core TN25/15/10- 3e25 TL25/15/10 toroid core Toroid 3F3 philips 3E25 philips 3f3 ferrite ring ferrite core
    Text: Philips Components Product specification Ferrite ring cores toroids TN25/15/10 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 1.23 mm−1 Ve effective volume 2944 mm3 Ie effective length 60.2 mm Ae effective area


    Original
    TN25/15/10 CBW306 TL25/15/10-3E5 TL25/15/10-3E6 TL25/15/10 3E6 PHILIPS toroidal core 3f3 PHILIPS toroidal core 3c90 PHILIPS toroidal core TN25/15/10- 3e25 TL25/15/10 toroid core Toroid 3F3 philips 3E25 philips 3f3 ferrite ring ferrite core PDF

    TN2540-800G

    Abstract: 7478 j k
    Text: TN2540, TXN625 TYN625, TYN825 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms


    Original
    TN2540, TXN625 TYN625, TYN825 O-220AB UL1557 E81734) TXN625RG TN2540-x00G) TN2540-800G 7478 j k PDF

    TN2529

    Abstract: No abstract text available
    Text: TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    TN2529 TN2529 A020309 PDF

    TN2524

    Abstract: No abstract text available
    Text: TN2524 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2524 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    TN2524 TN2524 A020309 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2510 Su pertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVuss / BVoas Rds on (max) V oS(lh) (max) *D(ON) (min) 100V 1.5ft 2.0V 3.0A Order Number / Package TO-243AA* Diet TN2510N8 TN2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    OCR Scan
    TN2510 O-243AA* TN2510N8 TN2510ND OT-89. 125pFmax. PDF

    25SI

    Abstract: No abstract text available
    Text: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Orderina Informâtion RdS ON (max) VûS(th) (max) 240V 6.0ft 2.0V Order Numb e r / Package If BVoss / BVcxss TO-243AA* Diet 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels,


    OCR Scan
    TN2524 O-243AA* TN2524N8 TN2524ND OT-89. 125pF 25SI PDF

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


    OCR Scan
    2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2 PDF

    Untitled

    Abstract: No abstract text available
    Text: T N 25D Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information BVDSS/ Order Number / Package f*DS ON ^ G S (th ) ' d (ON) (max) (max) (min) TO-243AA* DICE+ 350V 120 1.8V 1.0A — TN2535ND 400V 12£i 1.8V 1.0A TN2540N8


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    O-243AA* TN2540N8 TN2535ND TN2540ND OT-89. TN25D PDF

    TN25L

    Abstract: No abstract text available
    Text: ^ Supertex me. T N 25 L Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B Vdss / ^DS O N ^G S fth ) • d (ON) b v dgs (max) (max) (min) 20V 1.0Q 1.6V 4.0 A 40V 1.0CÌ 1.6V 4.0A Order Number / Package TO-243AA*TN2504N8


    OCR Scan
    O-243AA* TN2502ND TN2504ND TN2504N8 OT-89. TN25L PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*


    OCR Scan
    TN2535 O-243AA* TN2540N8 TN2535ND TN2540ND OT-89, PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ TN2502 Supertex ine. TN2504 Low T hresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ ^D S O N ^ G S (th | I d (ON) b v dgs (max) (max) (min) TO-243AA* DICEt 20V 1.0Q 1.6V 4.0A — TN2502ND 40V 1.0Q


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    TN2502 O-243AA* TN2504N8 TN2502ND TN2504ND OT-89. struc10 TN2502/TN2504 PDF