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    TO-252 N-CHANNEL MOSFET Search Results

    TO-252 N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-252 N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


    Original     		PDF O-252 CJU02N60 O-252

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


    Original     		PDF O-252 CJU01N60 O-252

    CHM25N15LPAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)


    Original     		PDF CHM25N15LPAGP O-252) 250uA CHM25N15LPAGP

    CHM05N65PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)


    Original     		PDF CHM05N65PAGP O-252) 250uA CHM05N65PAGP

    D2N60

    Abstract: U2N60
    Text: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PDF PJD2N60 PJU2N60 2002/95/EC O-252 O-251 O-252 O-251 MIL-STD-750 D2N60 U2N60

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK


    Original     		PDF NP55N04SUG NP55N04SUG O-252 O-252)

    d1740

    Abstract: NP55N04SUG
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK


    Original     		PDF NP55N04SUG NP55N04SUG O-252 O-252) d1740

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    ut3055

    Abstract: diode BA 158 mosfet BA 95 S
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. „ SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source „ ORDERING INFORMATION


    Original     		PDF UT3055 O-252 UT3055 O-251 UT3055-TM3-T UT3055L-TM3-T UT3055-TN3-R UT3055L-TN3-R UT3055-TN3-T UT3055L-TN3-T diode BA 158 mosfet BA 95 S

    SSD5030N

    Abstract: AIDM-110 South Sea Semiconductor
    Text: SSD5030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 50A TO-252 RDS(ON) (mΩ) Max D 9.5 @VGS = 10V G 19.5 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package. Pb free. S o


    Original     		PDF SSD5030N O-252 O-252 SSD5030N AIDM-110 South Sea Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.


    Original     		PDF O-252 O-252D OT-223 6N10G-AA3-R 6N10L-TN3-R 6N10G-TN3-R 6N10L-TND-R 6N10G-TND-R QW-R502-486

    D17322

    Abstract: 2SK3993 2SK3993-ZK 2SK399
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3993 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK3993 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3993 TO-251 MP-3 2SK3993-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching


    Original     		PDF 2SK3993 2SK3993 O-251 2SK3993-ZK O-252 O-251) D17322 2SK3993-ZK 2SK399

    Untitled

    Abstract: No abstract text available
    Text: FDD9409_F085 N-Channel PowerTrench MOSFET 40 V, 90 A, 3.2 mΩ D Features „ Typ RDS on = 2.3mΩ at VGS = 10V, ID = 80A D G „ Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A „ UIS Capability G S „ RoHS Compliant „ Qualified to AEC Q101 D-PAK TO-252 (TO-252)


    Original     		PDF FDD9409 O-252 O-252)

    n-channel 500v sot 23 Power MOSFET

    Abstract: TSM4ND50CP N-Channel mosfet 400v to220 N-CHANNEL POWER MOSFET SOT-252 MOSFET 500V 15A MOSFET 400V TO-220 MOSFET 500V 3A N-channel 500V mosfet TSM4ND50CZ
    Text: TSM4ND50 500V N-Channel Power MOSFET TO-220 TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM4ND50 O-220 O-252 TSM4ND50 n-channel 500v sot 23 Power MOSFET TSM4ND50CP N-Channel mosfet 400v to220 N-CHANNEL POWER MOSFET SOT-252 MOSFET 500V 15A MOSFET 400V TO-220 MOSFET 500V 3A N-channel 500V mosfet TSM4ND50CZ

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.


    Original     		PDF NP36P06SLG NP36P06SLG O-252 O-252)

    D18008

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.


    Original     		PDF NP36P06SLG NP36P06SLG O-252 O-252) 175ntrol D18008

    UF630L-TN3-R

    Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-220 O-220F UF630-TA3-T UF630L-TA3-T QW-R502-049 UF630L-TN3-R UF630 UF630-TA3-T UF630-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF4N20 Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UF4N20 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching


    Original     		PDF UF4N20 O-252 UF4N20 OT-223 UF4N20L-TN3-R UF4N20G-TN3-R UF4N20L-AA3-R UF4N20G-AA3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF4N20Z Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC UF4N20Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching


    Original     		PDF UF4N20Z O-252 UF4N20Z OT-223 UF4N20ZL-TN3-R UF4N20ZG-TN3-R UF4N20ZL-AA3-R UF4N20ZG-AA3-R QW-R502-753

    NP36P06SLG

    Abstract: D18008 MOSFET 2301
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.


    Original     		PDF NP36P06SLG NP36P06SLG O-252 O-252) D18008 MOSFET 2301

    UF630L-TN3-R

    Abstract: uf630 power mosfet UF630 UF630L-TA3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-220 O-220F UF630L-TA3-T UF630G-TA3-Tt QW-R502-049 UF630L-TN3-R uf630 power mosfet UF630 UF630L-TA3-T

    apm4048d

    Abstract: APM4048D. datasheet apm*4048D APM4048 APM4048DU4 MOSFET N-CH 200V 2l TRANSISTOR SMD MARKING CODE STD-020C DSA0042784
    Text: APM4048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, Top View of TO-252-4 RDS(ON)=37mΩ (typ.) @ VGS= -10V (3) D1


    Original     		PDF APM4048DU4 -40V/-6A, O-252-4 O252-4 APM40ckness MIL-STD-883D-2003 MIL-STD-883D-1005 JESD-22-B MIL-STD-883D-1011 MIL-STD-883D-3015 apm4048d APM4048D. datasheet apm*4048D APM4048 APM4048DU4 MOSFET N-CH 200V 2l TRANSISTOR SMD MARKING CODE STD-020C DSA0042784

    Untitled

    Abstract: No abstract text available
    Text: c p = G e n e r a l v S e m ic o n d u c t o r GFD30N03 N-Channel Enhancement-Mode MOSFET V d s 30V R ds <ON) 15rnQ I d 43A TO-252 DPAK) 0.170 (4.32) min. Dimensions in inches and (millimeters) (6.172) Mounting Pad Layout Mechanical Data Features Case: JEDEC TO-252 molded plastic body


    OCR Scan     		PDF GFD30N03 15rnQ O-252 O-252 MIL-STD-750, 011oz.