Untitled
Abstract: No abstract text available
Text: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: AUIRF4905L Description: Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a TO-262 Package Support Docs: N/A Commercial Datasheet Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive
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AUIRF4905L
O-262
O-262
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Abstract: No abstract text available
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D
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IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
O-262)
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFZ14L
Abstract: IRFZ14S IRFZ14STRL SiHFZ14L SiHFZ14S SiHFZ14STL SiHFZ44L
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
O-263)
O-262)
IRFZ14L
IRFZ14S
IRFZ14STRL
SiHFZ14STL
SiHFZ44L
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FT220X
Abstract: No abstract text available
Text: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.2 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI’s proprietary FT1248 interface and the following advanced features:
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FT220X
SPI/FT1248
FT220X
FT1248
FT220X.
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FT220X
Abstract: No abstract text available
Text: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.3 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI’s proprietary FT1248 interface and the following advanced features:
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FT220X
SPI/FT1248
FT220X
FT1248
FT220X.
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Untitled
Abstract: No abstract text available
Text: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.1 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI‟s proprietary FT1248 interface and the following advanced features:
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FT220X
SPI/FT1248
FT220X
FT1248
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FT220X
Abstract: FT200X free circuit diagram of USB modem FT220XQ-R ft232r connection to android FT200XD FT232RBitBangModes FT232R timing diagram android set top box CIRCUIT usb ferrite bead ft232r
Text: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.0 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI‟s proprietary FT1248 interface and the following advanced features:
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FT220X
SPI/FT1248
FT220X
FT1248
FT200X
free circuit diagram of USB modem
FT220XQ-R
ft232r connection to android
FT200XD
FT232RBitBangModes
FT232R timing diagram
android set top box CIRCUIT
usb ferrite bead ft232r
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FT1248
Abstract: FT220X 4K-32
Text: FT220X USB 4-BIT SPI/FT1248 IC Datasheet Version 1.1 Document No.: FT_000629 Clearance No.: FTDI# 262 Future Technology Devices International Ltd. FT220X USB 4-BIT SPI/FT1248 IC The FT220X is a USB to FTDI‟s proprietary FT1248 interface and the following advanced features:
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FT220X
SPI/FT1248
FT220X
FT1248
4K-32
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AS1860
Abstract: AS1851
Text: AS1860 — 60W/90W PoE PD Controllers with HV Isolation and Quad DC-DC Outputs GENERAL DESCRIPTION FEATURES The AS1860 integrates Akros GreenEdge Isolation technology with next generation Power-over-Ethernet PoE PD and integrated isolated high speed digital communication to deliver up to 90W to an
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AS1860
0W/90W
AS1860
AS1860â
2002/95/EC
AS1851
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IRLML6302
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1259A IRLML6302 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -20V RDS(on) = 0.60Ω
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IRLML6302
OT-23
incorp50
IRLML6302
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AS1851
Abstract: No abstract text available
Text: AS1851/31 — Digital Power PoE PD Controllers w/HV Isolation & Synchronous DC-DC Converter GENERAL DESCRIPTION Typical Applications The AS1851 and AS1831 devices each integrate Akros GreenEdge High Voltage Isolation technology with Powerover-Ethernet PoE PD and Synchronous DC-DC power
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AS1851/31
AS1851
AS1831
3W/25W
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: FDC2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC2612
FDC2612
NF073
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AN080
Abstract: AS18X4 AS1844
Text: AS1854/44/34/24 — Digital Power PoE PD Controllers with HV Isolation and Quad DC-DC Outputs GENERAL DESCRIPTION Typical Applications The AS18x4 product family integrates Akros GreenEdge Isolation technology with next generation Power-overEthernet PoE PD and power conversion technology to
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AS1854/44/34/24
AS18x4
2002/95/EC
AN080
AS1844
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Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT1409 SwitchRegTM 8 Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming General Description Features The AAT1409 is a highly integrated, high efficiency LED backlight solution for notebook computers, monitors and
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AAT1409
AAT1409
360mA
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fcp25n60
Abstract: FCP25N60N
Text: FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology
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FCP25N60N
fcp25n60
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Abstract: No abstract text available
Text: FCI25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology
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FCI25N60N
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Text: FCH25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 126 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from
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Text: FCI25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from
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FCH25N60
Abstract: No abstract text available
Text: FCH25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 126 mΩ Features Description • RDS on = 108 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from
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FCH25N60N
FCH25N60N
FCH25N60
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Abstract: No abstract text available
Text: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDH210N08
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Abstract: No abstract text available
Text: FCP25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from
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Abstract: No abstract text available
Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery
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SCH2080KE
O-247
R1102B
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Abstract: No abstract text available
Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel
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SCT2080KE
O-247
R1102B
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HUF75344A3
Abstract: Mosfet MARKING A1
Text: HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS on = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced process technology achieves the lowest possible
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HUF75344A3
HUF75344A3
Mosfet MARKING A1
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