TO-5 AMPS PNP TRANSISTOR Search Results

TO-5 AMPS PNP TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TO-5 AMPS PNP TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FZT951 Abstract: FZT953 fzt853 FZT851 DSA003718 Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps	Original	FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 fzt853 FZT851 DSA003718	PDF
Untitled Abstract: No abstract text available Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT951 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 Features	Original	FZT951 OT-223 FZT951 -500mA -100mA, -10mA -100mA -200mA -10mA,	PDF
smd transistor 2A Abstract: FZT951 ic 1240 Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT951 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 Features	Original	FZT951 OT-223 FZT951 -500mA -100mA, -10mA -100mA -200mA -10mA, smd transistor 2A ic 1240	PDF
CYStech Electronics Abstract: sot-223 code marking BTP953L3 Text: Spec. No. : C657L3 Issued Date : 2005.01.07 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP953L3 Features • 5 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage	Original	C657L3 BTP953L3 OT-223 UL94V-0 CYStech Electronics sot-223 code marking BTP953L3	PDF
FZT953 Abstract: continuous current Amps peak current Very saturated smd transistor 2A Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT953 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2	Original	FZT953 OT-223 -400mA -10mA, -100mA, 50MHz -200mA FZT953 continuous current Amps peak current Very saturated smd transistor 2A	PDF
Untitled Abstract: No abstract text available Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT953 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2	Original	FZT953 OT-223 -200mA -400mA -10mA, -100mA, 50MHz	PDF
FCX1051A Abstract: FCX1151A DSA003684 Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;	Original	FCX1151A FCX1051A 100ms FCX1051A FCX1151A DSA003684	PDF
GL359 Abstract: No abstract text available Text: CORPORATION GL359 Description ISSUED DATE :2005/10/27 REVISED DATE :2005/12/09B PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL359 is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 10Amps peak current	Original	GL359 2005/12/09B GL359 10Amps 10Amps OT-223	PDF
GL159 Abstract: No abstract text available Text: CORPORATION GL159 Description ISSUED DATE :2005/07/19 REVISED DATE :2005/12/09C PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL159 is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 15Amps peak current	Original	GL159 2005/12/09C GL159 15Amps 10Amps OT-223	PDF
2N5005 Abstract: TO-210AA Package TO-59 Package to-210AA 2N5005 JANTX 2N5003 Text: 2N5003 and 2N5005 PNP POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/535 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level.	Original	2N5003 2N5005 MIL-PRF-19500/535 2N5005. MIL-PRF-19500/535 T4-LDS-0237, 2N5005 TO-210AA Package TO-59 Package to-210AA 2N5005 JANTX	PDF
MARKING SMD PNP TRANSISTOR 2a Abstract: smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.	Original	FCX1151A -250mA -10mA -50mA, 50MHz -20mA MARKING SMD PNP TRANSISTOR 2a smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A	PDF
2N3810 LCC Abstract: 206AA 2N2920 LCC 2N3811 JANTX 2n3737 2N2907AUB Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *	Original	O-116 2N3810 LCC 206AA 2N2920 LCC 2N3811 JANTX 2n3737 2N2907AUB	PDF
sot223 code r1k Abstract: transistor marking NA 85 Text: PZT159 PNP Silicon Planar High Current Transistor Elektronische Bauelemente RoHS Compliant Product Features * 5 Amps continuous current, up to 15 Amp peak current. SOT-223 0.95±0.05 f Mechanical Data ３．５６ f * Very low saturation voltage	Original	PZT159 OT-223 OT-223 10Amps. -200mA -500mA -10mA -100mA, sot223 code r1k transistor marking NA 85	PDF
PZT359 Abstract: marking code 359 C1A MARKING Text: PZT359 PNP Silicon Planar High Current Transistor Elektronische Bauelemente RoHS Compliant Product Features 5 Amps continuous current, up to 10 Amp peak current. SOT-223 f f Mechanical Data f Very low saturation voltage f	Original	PZT359 OT-223 10Amps. OT-223 -10mA -100mA, 50MHz -200mA 200mA PZT359 marking code 359 C1A MARKING	PDF

MJL3281A Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	MJL3281A MJL1302A MJL3281A MJL1302A	PDF
741 IC Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096 Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >25@2.5/3 1.3@2.5/.25 6 60 2N3868 60 3 >20@2.5/3 1.3@2.5/.25 6 60 2N4930 200 .05 20-200@.01/10 5@.01/.001 5 10* 2N4931 250 .05	OCR Scan	O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5149 741 IC 741i IC 741 to 2N5415	PDF
Transistor 2N5093 Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151 Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >25@2.5/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)	OCR Scan	O-39/TO-5 2N3867A 2N3868A 2N5091 2N5093 2N5094 2N5096 2N5149 2N5151 2N5153 Transistor 2N5093 7 amps pnp transistor 2N5416A "PNP Transistor"	PDF
2N5581A Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B	OCR Scan	2N2604 2N2605 2N2944AA 2N2945 2N2945AA 2N2946 2N2946AA 2N3485 2N3485AA 2N3486 2N5581A	PDF
2N4033 Abstract: 2N3494 2N5415 Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637	OCR Scan	O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494	PDF
2n5347 Abstract: a/TO111 2n5100 Text: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T \| a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0	OCR Scan	2N4999 2N5000 2N5001 2N5002 2N5003 O-111 2N5004 2N5005 2N5006 2n5347 a/TO111 2n5100	PDF
transistor 2N4015 Abstract: 2N3806 Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 VcEO sus VOLTS Ic (max) AMPS 2N3726 45 0.1 2N3727 45 2N3806 PACKAGE DEVICE TYPE Jb TO-78 @ I<yV cE min/max @ mA/V h fE ^CE(sat) @ Ic/I b V @ raA/mA C<F p (MHz) 115@50/5 0.25@50/2.5 8 200 0.1	OCR Scan	2N3726 2N3727 2N3806 2N3807 2N3808 2N3809 2N3810 2N3810A 2N3811 2N3811A transistor 2N4015	PDF
2N3726 Abstract: 2N3806 2n3808 2N4854A "Dual PNP Transistor" Dual PNP Transistor 2N4939 SIS 900 2N3727 2N3809 Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 PACKAGE TO-78 VcEO sus VOLTS Ic (max) AMPS 2N3726 45 0.1 2N3727 45 2N3806 DEVICE TYPE @ IC/ V c E min/max @ m A/V ^FE ^ C E (sa t) @ IC/IB V @ mA/mA C<f P fi (MHz) 115@50/5 0.25@50/2.5 8 200	OCR Scan	2N3726 2N3727 2N3806 2N3807 2N3808 2N3809 2N3810 2N3810A 2N3811 2N3811A 2N4854A "Dual PNP Transistor" Dual PNP Transistor 2N4939 SIS 900	PDF
2N3726 Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 PACKAGE TO-78 Jf? DEVICE TYPE VcEO Ic sus (max) VOLTS AMPS IC/ V c E min/max @ mA/V 1*FE ^C E (jat) @ IC/IB V @ mA/mA C<p P fx (MHz) 2N3726 45 0.1 115@50/5 0.25@50/2.5 8 200 2N3727 45 0.1	OCR Scan	2N3726 2N3727 2N3806 2N3807 2N3808 2N3809 2N3810 2N3810A 2N3811 2N3811A	PDF
2n4929 Abstract: 2N4405 Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V ceo sus VOLTS Ic (max) AMPS ^FE @ IC/ VcE min/max @ mA/V VcE(wt) @ I c/I b V @ mA/mA C(P P ij (MHz) 2N4036 65 1.0 40/140@l 50/10 0.65@150/15 30 60 2N4037 40 1.0 50/250@l 50/10 1.4@150/15	OCR Scan	O-5/TO205AD/TO-39 T0205AD 2N4036 2N4037 2N4404 2N4405 2N4406 2N4407 2N4890 2N4928 2n4929	PDF

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TO-5 AMPS PNP TRANSISTOR Search Results

TO-5 AMPS PNP TRANSISTOR Result Highlights (5)

TO-5 AMPS PNP TRANSISTOR Datasheets Context Search

FZT951

Untitled

smd transistor 2A

CYStech Electronics

FZT953

Untitled

FCX1051A

GL359

GL159

2N5005

MARKING SMD PNP TRANSISTOR 2a

2N3810 LCC

sot223 code r1k

PZT359

MJL3281A

741 IC

Transistor 2N5093

2N5581A

2N4033

2n5347

transistor 2N4015

2N3726

2N3726

2n4929