2N5093 Search Results

L0050A

Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
Contextual Info: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z

Transistor 2N5093

Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >25@2.5/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)

Contextual Info: 2N5093 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)400 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5

PDTC

Abstract: 2N5282 2N3795 2N3868 2N4999 2N5001 2N5005 2N5281 2N5333 SFT5333
Contextual Info: PNP TRANSISTORS h F E @ 1C Device Type V C E O sus Volts Min 1 120 150 2N3795 2N5281 80 2N4999 2 25 SFT5333 2N3868 50 20 1.0 2.0 2.5 60 2.5 2.5 60 70 30 30 15 15 50 50 100 100 6 50 25 50 50 50 TO-59 TO-59 TO-5 TO-5 TO-5 2N5003 30 2N5005 2M6190 70 30 2.0

10 35 DIODE

Abstract: BFT19B diode 15 35
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 2N5282 STIP30 STIP305 TRSP3743 2N5345 MJE5730 MJE5730 MJE5730 g~~~~ 25 30 BST16 MJ5416 MJ5416 MM5416 MM5416 MM5416 ST5416 2N5416 +RSP5~~6 35 40 TRSP3006 TRSP30X TRSP30X TRSP30X5 TRSP30X5 TRLP3504 TRLP3504

2N5415

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25

2N3743

Abstract: 2N4930 2N4931 2N5096 2N5282
Contextual Info: 3869720 G EN ER A L ' O I D D E CORP 07C 0 02 54 GENERAL DIODE CORP 07 D -p-33 - DE | 301^750 DDODSSM Ö | ~ SILICON N P N - Power Transistors rvP E i, M AX . TH ER M AL ;s Junction lo Cáse M AX. C O LL. DI SS. t< net A li 925* C A B S O L U T E M A X . R A T IN G S { » ' C .

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

741 IC

Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >25@2.5/3 1.3@2.5/.25 6 60 2N3868 60 3 >20@2.5/3 1.3@2.5/.25 6 60 2N4930 200 .05 20-200@.01/10 5@.01/.001 5 10* 2N4931 250 .05

2N5286

Abstract: 2N4236 2N4387 2N4388 2N4398 2N4399 2N4898 2N4899 2N4900 2N4901
Contextual Info: H P II PNP DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREiA K D O V VN V OLTAGE S SAT . V O L T A GES M<ax. h F: E CASE V CB VΠV EB (V) 'c (A) M in. Max. (A) 'b (A) V CE (V) V BE (V) 2N4236 TO -5 80 80 7 1 0.25 30 150 0.25 0.125 0.6 2 2N4387

MD14

Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
Contextual Info: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p

1040B

Abstract: 2N3910 svt6062 2n5100
Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.

2N4927

Abstract: 2N5415
Contextual Info: General Transistor Corporation PNP Power Transistors CASE T O - 5 / T O -3 9 IC M AX = 0 .0 5 -5 A Vceo(SUS) = 4 0 -4 5 0 V NPN Typ» No. cowptomiot 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 VCEO (tua) M le (max) (Al hre@leVct (m(n-ma> A/V) VCE<SAT) ® Ic /Ib

MD14

Abstract: 2N3743 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5100 2N5281
Contextual Info: 4 4 7 1 0 7 8 HIGH VOLTAGE ~ 80 DOOODDb 7 fioft T-37-W . p SILICON PNP POWER TRANSISTORS - MAX. THERM AL RES. Junction to Case « io fC /W MAX. C O L L. M A X. in Free T Air $2 5 *C E M Pc R J ABSO LU TE MAX. RATINGS £ 25* C . piss. h FE MIN.) GBW BIAS

PNP TO-39

Abstract: 2N6191
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 pr D* ix 1.3@2.5/.25 6 60 >20@2.5/3 1.3@2.5/.25 6 60 1 20-200@. 1/15 3@.025/.0025 4 10* 350 1 20-200@.l/15 3@.025/.0025 4 10‘ 2N5094 400 1 20-200@.l/15 3@.025/.0025 4 10' 2N5096 450 1 20-200@.l/15

m30040

Contextual Info: GENERAL T RA NS IST O R CORP S4E D • 3=120001 OOOQOb? 3 General Transistor Corporation 216 W E ST FLO R EN C E A V EN U E IN GLEW O O D , C A LIFO RN IA 90301 213 673-8422 • Telex 65-3474 • FA X (213) 672-2905 PNP Power Transistors CASE TO-5/TO-39

2N5094

Abstract: 2N5091 2N5096 2N5093 C178T Transistor 2N5093 2N5095 2N5097
Contextual Info: ÿ o & m l 2N5094 AND 2N5096 £ £ I D I I s)s>U»'ll 1 AMP HIGH VOLTAGE PNP TRANSISTOR 450-500 VOLTS 14830 Valley View Avenue La Mirada. Calitornia 90638 TW X 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDECTO—5 FEATURES • BVCBO TO 500 V O LTS • LOW SATURATION VOLTAGE

transistor 3504 npn

Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
Contextual Info: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK