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Microchip Technology Inc 2N5095 TRANS NPN 500V 1A TO-5AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5095	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
GTCAP 2N5095
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5095		88			1 $42.4084 10 $42.4084 100 $33.9267 1000 $33.9267 10000 $33.9267	Buy Now
General Transistor Corp 2N5095
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5095		19			1 $35.3404 10 $33.5734 100 $31.8064 1000 $31.8064 10000 $31.8064	Buy Now

2N5095 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5095	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=400 / Ic=1 / Hfe=15-250 / fT(Hz)=50M / Pwr(W)=2	Original	PDF
2N5095	Diode Transistor	NPN Transistor Selection Guide	Scan	PDF
2N5095	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5095	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N5095	High Voltage Semi-Conductor Specialists	Military and Industrial Medium Power Transistors	Scan	PDF
2N5095	High Voltage Semi-Conductor Specialists	Silicon PNP - Power Transistors	Scan	PDF
2N5095	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5095	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N5095	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5095	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5095	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5095	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N5095	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5095	New England Semiconductor	Transistor Selection Guide	Scan	PDF

2N5095	New England Semiconductor	NPN TO-39 / TO-5 Transistor	Scan	PDF
2N5095	PPC Products	Transistor Short Form Data	Scan	PDF
2N5095	Semiconductor Technology	High Voltage Silicon Low and Medium Power Transistors	Scan	PDF
2N5095	Semiconductor Technology	High Voltage Silicon Low and Medium Power Transistors	Scan	PDF
2N5095	Solid State	500 V, 1 A high voltage NPN transistor - Pol=NPN / Pkg=TO39 / Vceo=400 / Ic=1 / Hfe=15-250 / fT(Hz)=50M / Pwr(W)=2	Scan	PDF
2N5095	Solid State Devices	BJT, NPN, High Voltage Transistor, IC 1A - Pol=NPN / Pkg=TO39 / Vceo=400 / Ic=1 / Hfe=15-250 / fT(Hz)=50M / Pwr(W)=2	Scan	PDF

2N5095 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N2992 Abstract: 23028 2N3016 JANTX2N3440 Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S	OCR Scan		PDF
2N5095 Contextual Info: 2N5095 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)	Original	2N5095 O205AD) 1-Aug-02 2N5095	PDF
Contextual Info: 2N5095 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)	Original	2N5095 O205AD) 19-Jun-02	PDF
2N5097 Abstract: 2N5092 2N5094 2N5095 2N5096 10cf Contextual Info: X o i& U M UDII 2N5095 AND 2N5097 1 AMP HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS CASE STYLE W JEDEC TO—5 I. P 330 .320 14830 Valley View Avenue La Mirada, California 90638 P. O. Box 577 La Mirada, California 90637 213 921-9660 TWX 910-583-4807 FEATURES	OCR Scan	2N5095 2N5097 2N5094 2N5096 2N5092 2N5096 10cf	PDF
Contextual Info: 2N5095 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2N5095 Freq50M	PDF
Contextual Info: 2N5095 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)	Original	2N5095 O205AD) 17-Jul-02	PDF
Contextual Info: SOLID STATE DEVICES INC 1EE D \| ô 3 b b D l l 000BD55 7 \| T - 3 3 -05" 2N5095 AND 2N5097 1 AMP 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS CASE STYLE W JEDEC TO—5	OCR Scan	000BD55 2N5095 2N5097	PDF
2N1479 Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786 Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863	OCR Scan	O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786	PDF
Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5	OCR Scan	O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420	PDF
Contextual Info: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C	OCR Scan	2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002	PDF
2N4839 Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792 Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i	OCR Scan	2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716	PDF
Contextual Info: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN	OCR Scan	2N4925 2N4928 2N4929 2N4930 2N4931 2N4937 2N4999 2N5000 2N5001 2N5002	PDF
MD14 Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990 Contextual Info: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p	OCR Scan	34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990	PDF
1040B Abstract: 2N3910 svt6062 2n5100 Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.	OCR Scan	1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100	PDF

2N3904DCSM Abstract: 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930 Contextual Info: Ö1331Ö7 GGD043Ö TT1 4 ÔE D SEMELABL SEMELAB IS MLB LTD * 27. ^ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2NA907 2NA908 2NA909 2NA910 2NA911 2NA912 2NA913 2NA91A	OCR Scan	GGD043Ö 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2N3904DCSM 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930	PDF
2N4927 Abstract: 2N5415 Contextual Info: General Transistor Corporation PNP Power Transistors CASE T O - 5 / T O -3 9 IC M AX = 0 .0 5 -5 A Vceo(SUS) = 4 0 -4 5 0 V NPN Typ» No. cowptomiot 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 VCEO (tua) M le (max) (Al hre@leVct (m(n-ma> A/V) VCE<SAT) ® Ic /Ib	OCR Scan	2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 2N1483 2N1484 2N1495 2N1486 2N4927 2N5415	PDF
2N5098 Abstract: TRS-1604 TRS1604 2N3742 a 4504 2N5013 20MC 2N3439 2N4926 2N4927 Contextual Info: Û0 D E JM47107fl DOOODOE □ f 8 0 A 00002 D 7~— X l - û j HIGH VOLTAGE 4471078 HIGH VOLTAGE BVCER RBE10Ü @200 lia VOLTS 350 2N3439 2N4926 / 2K4927 200 200 ’ 250 500« 2N5011 @100 ua VOLTS 300 250 2N5010 @200 ua VOLTS 300 300 2N3742 BVEBO •450 ' 250	OCR Scan	M47107fl 2N3439 2M3440 2N3742 2N4926 2N4927 2N5010 2N5011 2N5012 2N5013 2N5098 TRS-1604 TRS1604 a 4504 20MC	PDF
m30040 Contextual Info: GENERAL T RA NS IST O R CORP S4E D • 3=120001 OOOQOb? 3 General Transistor Corporation 216 W E ST FLO R EN C E A V EN U E IN GLEW O O D , C A LIFO RN IA 90301 213 673-8422 • Telex 65-3474 • FA X (213) 672-2905 PNP Power Transistors CASE TO-5/TO-39	OCR Scan	O-5/TO-39 0-450V 2N3742 001efcV) m30040	PDF
Contextual Info: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013	OCR Scan	2N5058 2N3742 SFT102 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 SFT8600	PDF
2N5094 Abstract: 2N5091 2N5096 2N5093 C178T Transistor 2N5093 2N5095 2N5097 Contextual Info: ÿ o & m l 2N5094 AND 2N5096 £ £ I D I I s)s>U»'ll 1 AMP HIGH VOLTAGE PNP TRANSISTOR 450-500 VOLTS 14830 Valley View Avenue La Mirada. Calitornia 90638 TW X 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDECTO—5 FEATURES • BVCBO TO 500 V O LTS • LOW SATURATION VOLTAGE	OCR Scan	2N5094 2N5096 2N5095 2N5097 2N5091 2N5093 C178T Transistor 2N5093 2N5097	PDF
transistor 3504 npn Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152 Contextual Info: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803	OCR Scan	Efl463S2 TMI\I515TQR rc-25Â 2N3867 2N3868 2N5147 2N5149 2N5151 2N5153 2N5148 transistor 3504 npn 2N3742 2N5150 2N5152	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan		PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan		PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF

2N5095 Search Results

2N5095 Price and Stock

Microchip Technology Inc 2N5095

GTCAP 2N5095

General Transistor Corp 2N5095

2N5095 Datasheets (21)

2N5095 Datasheets Context Search

2N2992

2N5095

2N5097

2N1479

2N4839

MD14

1040B

2N3904DCSM

2N4927

2N5098

m30040

2N5094

transistor 3504 npn

MC2259

RCA SK CROSS-REFERENCE

Diode 400V 5A

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