2N5015
Abstract: 2N5015S
Text: 2N5015 2N5015S MECHANICAL DATA HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. •
|
Original
|
2N5015
2N5015S
10MHz
2N5015
2N5015S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
|
Original
|
2N5015SX
O205AD)
10/20m
19-Jun-02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C
|
OCR Scan
|
2N4938DCSM
2N4939
2N4939DSCM
2N4999
2N5000
2N5000-SM
2N5001
2N5001-SM
2N5001S
2N5002
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
|
Original
|
2N5015S
O205AD)
10/20Parameter
10/20m
17-Jul-02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
|
Original
|
2N5015S
O205AD)
10/20m
19-Jun-02
|
PDF
|
2N5015S
Abstract: No abstract text available
Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
|
Original
|
2N5015S
O205AD)
10/20m
1-Aug-02
2N5015S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
|
Original
|
2N5015SX
O205AD)
10/2Parameter
10/20m
17-Jul-02
|
PDF
|
2N5015SX
Abstract: 1000v, NPN
Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
|
Original
|
2N5015SX
O205AD)
10/20m
1-Aug-02
2N5015SX
1000v, NPN
|
PDF
|
2N5015SX
Abstract: 2N5015X 3800 NPN TO205AA
Text: 2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia.
|
Original
|
2N5015X
2N5015SX
10MHz
2N5015SX
2N5015X
3800 NPN
TO205AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5015 2N5015S MECHANICAL DATA HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. •
|
Original
|
2N5015
2N5015S
10MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia.
|
Original
|
2N5015X
2N5015SX
10MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN
|
OCR Scan
|
2N4925
2N4928
2N4929
2N4930
2N4931
2N4937
2N4999
2N5000
2N5001
2N5002
|
PDF
|
2N3904DCSM
Abstract: 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930
Text: Ö1331Ö7 GGD043Ö TT1 4 ÔE D SEMELABL SEMELAB IS MLB LTD * 27. ^ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2NA907 2NA908 2NA909 2NA910 2NA911 2NA912 2NA913 2NA91A
|
OCR Scan
|
GGD043Ö
2NA898
2N4899
2NA900
2NA901
2N4902
2NA903
2NA90A
2NA905
2NA906
2N3904DCSM
2N2222ADCSM
2NA931
2N3810DCSM
2NA999
2NA930
|
PDF
|
NPN VCEO 800V
Abstract: pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn
Text: Search Results Part number search for devices beginning "2N4939" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4939 PNP TO79 40V 0.05A 50 - 10/1m 300MHz
|
Original
|
2N4939"
2N4939
2N4939DCSM
10/1m
300MHz
2N5001"
2N5001
2N5001S
NPN VCEO 800V
pnp 1000V 2A
PNP Vceo 500V
2A 40V NPN
NPN VCEo 1000V
1000v, NPN
800V PNP
1000v 5A npn
|
PDF
|
|
2N5013
Abstract: 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015
|
Original
|
MIL-PRF-19500/727
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010S
2N5011S
2N5012S
2N5013
2N5010
2N5011
2N5012
2N5014
2N5015
transistor npn 10mhz 500v
|
PDF
|
2N5010
Abstract: 2N5011 2N5015 2N5015S transistor U4 U430
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 21 April 2010. MIL-PRF-19500/727B 21 January 2010 SUPERSEDING MIL-PRF-19500/727A 15 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,
|
Original
|
MIL-PRF-19500/727B
MIL-PRF-19500/727A
2N5010
2N5015,
2N5010S
2N5015S,
2N5010U4
2N5015U4,
MIL-PRF-19500.
2N5011
2N5015
2N5015S
transistor U4
U430
|
PDF
|
2N5014
Abstract: 2N5015 2N5010 2N5011 2N5012 2N5013 npn ic 25mA
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015
|
Original
|
MIL-PRF-19500/727
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010S
2N5011S
2N5012S
2N5014
2N5015
2N5010
2N5011
2N5012
2N5013
npn ic 25mA
|
PDF
|