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    Microchip Technology Inc 2N5015S

    TRANS NPN 1000V 0.2A TO39
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    Microchip Technology Inc JAN2N5015S

    Trans GP BJT NPN 1000V 200mA 3-Pin TO-39 Bag - Bag (Alt: JAN2N5015S)
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    Microchip Technology Inc JANTX2N5015S

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    Microchip Technology Inc JANTXV2N5015S

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    2N5015S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5015S Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=1000 / Ic=0.5 / Hfe=30-180 / fT(Hz)=20M / Pwr(W)=2 Original PDF
    2N5015SX Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Original PDF

    2N5015S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5015

    Abstract: 2N5015S
    Text: 2N5015 2N5015S MECHANICAL DATA HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. •


    Original     		PDF 2N5015 2N5015S 10MHz 2N5015 2N5015S

    Untitled

    Abstract: No abstract text available
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015SX O205AD) 10/20m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20Parameter 10/20m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20m 19-Jun-02

    2N5015S

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20m 1-Aug-02 2N5015S

    Untitled

    Abstract: No abstract text available
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015SX O205AD) 10/2Parameter 10/20m 17-Jul-02

    2N5015SX

    Abstract: 1000v, NPN
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015SX O205AD) 10/20m 1-Aug-02 2N5015SX 1000v, NPN

    2N5015SX

    Abstract: 2N5015X 3800 NPN TO205AA
    Text: 2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia.


    Original     		PDF 2N5015X 2N5015SX 10MHz 2N5015SX 2N5015X 3800 NPN TO205AA

    Untitled

    Abstract: No abstract text available
    Text: 2N5015 2N5015S MECHANICAL DATA HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. •


    Original     		PDF 2N5015 2N5015S 10MHz

    Untitled

    Abstract: No abstract text available
    Text: 2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia.


    Original     		PDF 2N5015X 2N5015SX 10MHz

    NPN VCEO 800V

    Abstract: pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn
    Text: Search Results Part number search for devices beginning "2N4939" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4939 PNP TO79 40V 0.05A 50 - 10/1m 300MHz


    Original     		PDF 2N4939" 2N4939 2N4939DCSM 10/1m 300MHz 2N5001" 2N5001 2N5001S NPN VCEO 800V pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N5013

    Abstract: 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015


    Original     		PDF MIL-PRF-19500/727 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5013 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v

    2N5010

    Abstract: 2N5011 2N5015 2N5015S transistor U4 U430
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 21 April 2010. MIL-PRF-19500/727B 21 January 2010 SUPERSEDING MIL-PRF-19500/727A 15 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,


    Original     		PDF MIL-PRF-19500/727B MIL-PRF-19500/727A 2N5010 2N5015, 2N5010S 2N5015S, 2N5010U4 2N5015U4, MIL-PRF-19500. 2N5011 2N5015 2N5015S transistor U4 U430

    Untitled

    Abstract: No abstract text available
    Text: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C


    OCR Scan     		PDF 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002

    Untitled

    Abstract: No abstract text available
    Text: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN


    OCR Scan     		PDF 2N4925 2N4928 2N4929 2N4930 2N4931 2N4937 2N4999 2N5000 2N5001 2N5002

    2N3904DCSM

    Abstract: 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930
    Text: Ö1331Ö7 GGD043Ö TT1 4 ÔE D SEMELABL SEMELAB IS MLB LTD * 27. ^ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2NA907 2NA908 2NA909 2NA910 2NA911 2NA912 2NA913 2NA91A


    OCR Scan     		PDF GGD043Ö 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2N3904DCSM 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930