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    2N5098 Search Results

    2N5098 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5098 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N5098 Diode Transistor Transistor Short Form Data Scan PDF
    2N5098 General Transistor Power Transistor Selection Guide Scan PDF
    2N5098 High Voltage Semi-Conductor Specialists Military and Industrial Medium Power Transistors Scan PDF
    2N5098 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5098 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5098 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5098 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5098 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5098 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5098 New England Semiconductor NPN TO-39 / TO-5 Transistor Scan PDF
    2N5098 PPC Products Transistor Short Form Data Scan PDF
    2N5098 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N5098 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF

    2N5098 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5098 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)700 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5098 Freq50M

    B0410

    Abstract: MJ050 STI-3007 STI3007 NS034 2N3439S TO5
    Text: POWER SILICON NPN Ic Item Number Part Number I C -5 10 - 15 20 >= -30 g:~g TRS3006 042R2 042R2 2S0198 2S0860A 40327L 40327S 2SC1050 2N5252 044R4 044R4 044R4 2N5253 044R8 044R8 TRS30X5 t~~g~~ 35 40 TRS30X TRS30X TRS30X B0410 2N6772 BUW40A BUW40A 2N5092 ~~~~98


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    PDF ST13006 TIP48 2SC2022 MST30B STI3007 2N6176 STI30 STI305 O-37var B0410 MJ050 STI-3007 NS034 2N3439S TO5

    2N5101

    Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P
    Text: STI Type: 2N5050 Notes: Polarity: NPN Power Dissipation: 40 VCBO: 125 VCER: 125 ICBO: 125 ICBO ua: 500 hFE: 25 hFE A: 1.0 VCE: 1.0 VBE: 1.2 IC A: .75 COB: 250 fT: 10 Case Style: TO-213AA/TO-66 Industry Type: 2N5050 STI Type: 2N5052 Notes: *BVCEO Polarity: NPN


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    PDF 2N5050 O-213AA/TO-66 2N5052 2N5055 O-206AA/TO-18: 2N5056 2N5101 BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P

    2SK1411

    Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
    Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0


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    PDF 2SK1358 O-247 2SK1359 2SK1362 2SK2563 2SK2568 2SK1411 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225

    2N2992

    Abstract: 23028 2N3016 JANTX2N3440
    Text: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S


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    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


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    PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


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    PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


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    PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    MD14

    Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
    Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p


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    PDF 34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990

    1040B

    Abstract: 2N3910 svt6062 2n5100
    Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.


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    PDF 1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100

    2N5098

    Abstract: TRS-1604 TRS1604 2N3742 a 4504 2N5013 20MC 2N3439 2N4926 2N4927
    Text: Û0 D E JM47107fl DOOODOE □ f 8 0 A 00002 D 7~— X l - û j HIGH VOLTAGE 4471078 HIGH VOLTAGE BVCER RBE10Ü @200 lia VOLTS 350 2N3439 2N4926 / 2K4927 200 200 ’ 250 500« 2N5011 @100 ua VOLTS 300 250 2N5010 @200 ua VOLTS 300 300 2N3742 BVEBO •450 ' 250


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    PDF M47107fl 2N3439 2M3440 2N3742 2N4926 2N4927 2N5010 2N5011 2N5012 2N5013 2N5098 TRS-1604 TRS1604 a 4504 20MC

    Untitled

    Abstract: No abstract text available
    Text: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013


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    PDF 2N5058 2N3742 SFT102 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 SFT8600

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: I max = 0 .0 5 to lO A V cE O (SU S) = 4 0 -8 0 0 V fi = I to 5 0 MHz NPN TG-39/TO-5 Case 801 PNP Com ple­ ment PO @ VCEO (SUS) 1C (MAX) w w 2N1479 40 1.5 20-60@.2/4 1.4 . 21.02 3@.2/4 .25@ 60 5 150 1.5 2N1480 55 1.5 20-60@.2/4 1.4®.2/.02 3®.2/4 .25® 100


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    PDF TG-39/TO-5 10/IB 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    2N5048

    Abstract: 2n5076 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5038 2N5039
    Text: * [*) Il PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRE A K D O V \ / N SAT. V O L T A SES ( M a X .) h FE V (DLTAGE1 N PN V BE (V) CASE V CB V CE V EB VCE (V) >C (A) M in . M ax. >C (A) 'b (A) 2N5010 TO-5 500 500 5 10 0.025 30 180 0.025 0.005 1.4


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    PDF 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5038 2N5039 2N5048 2N5049 2n5076

    2n5347

    Abstract: a/TO111 2n5100
    Text: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T | a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0


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    PDF 2N4999 2N5000 2N5001 2N5002 2N5003 O-111 2N5004 2N5005 2N5006 2n5347 a/TO111 2n5100

    S S 850-03

    Abstract: ST 7502 2N3742 2N5146 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418
    Text: NEU EN GL A N D S E M I C O N D U C T O R STE D • b S b M T T a Ü O Ü D D S 1 725 * N E S I max = 0 .0 5 to lO A V ceo(sus) = 4 0 - 8 0 0 V fl = 1 to 5 0 MHz NPN TÜ-39/TÜ-5 Case 801 T-S3 (MAX) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 15 15 15 15 20-60 2/4


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    PDF bSb1T13 O-39/TÃ 0-800V 2N1479 2N1480 2N1481 2N1482 2N5339 2N5541 2N5729 S S 850-03 ST 7502 2N3742 2N5146 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418

    Untitled

    Abstract: No abstract text available
    Text: NEW E N G L A N D S E M I C O N D U C T O R STE D • b S b l4tìlì3 G O D D O S l 725 M N E S I max = 0 .0 5 to lO A V ceo(sus) = 4 0 -8 0 0 V fi = 1 to 5 0 MHz NPN TO-39/TO-5 Case 801 T -3 3 ~ o ( VCE (SAT) @ IC/ lB ( V A/A) VBE (SAT) @ |C/lB (V ® A/A)


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    PDF 2N1479 2N1480 2N1481 2N1482 2N5729 2N5784 2N5785 2N5786

    2N5339 Diode

    Abstract: 40327 FR 302 Diode 2N4866 2N1479 2N1480 2N1481 2N1482 2N1700 2N5781
    Text: s g g g g g g g g 0 0 0 0 0 0 cncncncncncncncnroro A cn 0 Ö 0 0 Ö 0 0 Ö 0 Ö Ö Ö c o c o r o r o c o c o c o c o m m - * —i- — ^ C O C O C O —i- —i- — 0 cn cn b i c n c n c n b i c n o c n c n c n c n ö ö ö o o o o o 03 COO?COq?COJk.r*.-*>|COI'O.U


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    PDF O-39/TO-5 TfiM515T0nrQ 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5786 2N5339 Diode 40327 FR 302 Diode 2N4866 2N5781

    ALY TRANSISTOR

    Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


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    PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 ALY TRANSISTOR 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY