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    TO-66 TRANSISTOR Search Results

    TO-66 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-66 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N3789

    Abstract: SDT3802
    Text: industrial power transistors 130 SILICON PNP TRANSISTORS 15 Amp BREAKDOWN VOLTAGES TYPE NUMBER CASE SIZE VeB SDT3801 SDT3802 SDT3803 SDT3804 2N3789 2N3790 2N3791 2N3792 TO-66 TO-66 TO-66 TO-66 TO-3 TO-3 TO-3 TO-3 -60 -80 -60 -80 -60 -80 -60 -80 VeE VEB -60


    Original     		SDT3801 SDT3802 SDT3803 SDT3804 2N3789 2N3790 2N3791 2N3792 -550C 1500C PDF

    2sd315

    Abstract: 2SB509
    Text: SavantIC Semiconductor Product Specification 2SB509 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SD315 APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION Fig.1 simplified outline (TO-66) and symbol


    Original     		2SB509 2SD315 2sd315 2SB509 PDF

    2N5466

    Abstract: SDT1062 sdt1061
    Text: industrial power transistors 132 SILICON NPN HI-VOLTAGE TRANSISTORS 5 Amp TO-3 TO-66 TO-61 NUMBERS NUMBERS NUMBERS SDr SDr SDr SDr SDr SDr SDr SDr SDr SDr 1050 1051 1052 1053 1054 TO-3 1150 1151 1152 1153 1154 TO-66 SDr SDr SDr SDr SDr 1250 1251 1252 1253


    Original     		PDF

    J 2N3054

    Abstract: transistor 101 UP2-TO66-B to-66 transistor
    Text: UP2 Series for 1O-66 Outline UP2-TO66-CB w /2N3054 cr., '"'1 U 101 ~1 1Z w 00 ~ < w > ID < W / ~ n: ~ W 1W (/) < U 00 (TO-66) TRANSISTOR DESCRIPTION OF CURVES N.C. Horiz.Device Only Mounted to G.10. 90 .N.C. Horiz. & Vert. With Dissipator. .200 FPM w/Diss.


    Original     		1O-66 UP2-TO66-CB /2N3054 UP2-TO66-52CB UP2-TO66 UP2-TO66-47B UP2-TO66 UP2-TO66-47 UP2-TO66-52B UP2-TO66-52 J 2N3054 transistor 101 UP2-TO66-B to-66 transistor PDF

    2N3055 transistor equivalent

    Abstract: 2N3055 equivalent equivalent transistor 2n3055 2N3054 HP3-000 T066 transistor 8cb hp*t03
    Text: ~ HP1. TO66-8CB w/ 3 HP1 Series for Three TO-66 Outline G 110 I, 2N3054 (TO.66) TRANSISTORS 'A.- o DESCRIPTION OF CURVES /B ;:- 100 z ~ 90 ID ~ 8° cr., A. N.C. Horiz. Device Only Mounted to G.10. ~ o ID c( 70 ~ ~ n: 50 ~ ~ 1~ U) c( t) 30 B. N.C. Horiz. & Vert.


    Original     		O66-8CB 2N3054 HP3-436 HP3-420 HP3-TO3-44 HP3-000 HP3-T03 HP3-T03-33 2N3055 transistor equivalent 2N3055 equivalent equivalent transistor 2n3055 2N3054 HP3-000 T066 transistor 8cb hp*t03 PDF

    transistor w2B

    Abstract: No abstract text available
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection


    Original     		OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJ-REEL ADG3231BRJ-REEL7 ADG3231BRJZ-REEL ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL71 transistor w2B PDF

    486dx2

    Abstract: 486DX2* circuits 74684 fast page mode dram controller QL2003 a486dx2
    Text: QAN6 Page Mode DRAM Controller for 486DX2 1.0 SUMMARY Interfaces to 66 MHz 486DX2 microprocessor This application note presents an example of a high-performance page-mode DRAM controller implemented in a QuickLogic QL2003 FPGA which interfaces to a 66 MHz 486DX2 microprocessor. The function integrates the


    Original     		486DX2 QL2003 486DX2 84-pin 22V10 486DX2* circuits 74684 fast page mode dram controller a486dx2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection


    Original     		OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJZ-REEL ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL71 OT-23 PDF

    transistor w2B

    Abstract: ADG3231BRJ-REEL ADG3231 ADG3231BRJ-REEL7 ADG3231BRJZ-REEL SOT-66
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection


    Original     		OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJ-REEL ADG3231BRJ-REEL7 ADG3231BRJZ-REEL ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL71 transistor w2B ADG3231BRJ-REEL ADG3231BRJ-REEL7 SOT-66 PDF

    RA07M0608M-101

    Abstract: RA07M0608M Pin-30mW RA07M0608
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to


    Original     		RA07M0608M 66-88MHz RA07M0608M 88-MHz RA07M0608M-101 Pin-30mW RA07M0608 PDF

    RA55H4047M

    Abstract: RA30H0608M RA30H0608M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to


    Original     		RA30H0608M 66-88MHz RA30H0608M 30-watt 88-MHz RA55H4047M RA55H4047M RA30H0608M-101 PDF

    ADG3231

    Abstract: ADG3231BRJ-REEL ADG3231BRJ-REEL7 sot66 ADG3231BRYZ-REEL1
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 Y A GND APPLICATIONS 03298-001 Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages


    Original     		OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJ-REEL ADG3231BRJ-REEL7 ADG3231BRJZ-REEL1 ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL1 ADG3231BRJ-REEL ADG3231BRJ-REEL7 sot66 ADG3231BRYZ-REEL1 PDF

    RA30H0608M

    Abstract: RA30H0608M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to


    Original     		RA30H0608M 66-88MHz RA30H0608M 30-watt 88-MHz RA30H0608M-101 PDF

    RA07M0608M

    Abstract: RF MOSFET MODULE RA07M0608M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to


    Original     		RA07M0608M 66-88MHz RA07M0608M 88-MHz RF MOSFET MODULE RA07M0608M-101 PDF

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to 88-MHz range. The battery can be connected directly to the drain of the


    Original     		RA30H0608M 66-88MHz RA30H0608M 30-watt 88-MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to 88-MHz range. The battery can be connected directly to the drain of the


    Original     		RA30H0608M RA30H0608M 30-watt 88-MHz PDF

    40411 transistor

    Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
    Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66


    OCR Scan     		2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39 PDF

    bdx 330

    Abstract: DARLINGTON ESM 749 box53a 800V PNP DARLINGTON ESM 30 bov66 BUX37 bu bdx 64 BUX 837 BUV74
    Text: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v CEO 45V 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A BDV 67 B BDV 66 B BDV 67 C


    OCR Scan     		BDV67 BDV66 BDV65 BDV64 BDX33 O-220 BDX53 BDX54 T0-220 bdx 330 DARLINGTON ESM 749 box53a 800V PNP DARLINGTON ESM 30 bov66 BUX37 bu bdx 64 BUX 837 BUV74 PDF

    BU 450 bdx

    Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
    Text: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A


    OCR Scan     		BDV67 BDV66 BDV65 BDV64 BDX33 O-220 BDX53 BDX54 T0-220 BU 450 bdx bdx 330 BUX 837 BUX37 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54 PDF

    npn transistor to-66

    Abstract: 2N3584A TRANSISTOR 751 2N3054A 2N3879A 2N3584 2n3767 2N3583 2N3738 2N3878
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 V ceo Ic DEVICE TYPE sus VOLTS (max) AMPS NPN TO-66 2N3054A 55 4 25-100@.5/4 2N3583 250h 2N3584A T ir ^ * Tc = 25UC h V»CER VcE(j»t) @ I c^Ib (V@ A/A) l*FE@ V V ce PACKAGE (min/max @ A/V) p • D*


    OCR Scan     		2N3054A 2N3583 2N3584A 2N3585A 2N3738 2N3739A 2N3766A 2N3767A 2N3878 2N3879A npn transistor to-66 TRANSISTOR 751 2N3584 2n3767 PDF

    transistor A7a

    Abstract: 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 2N6212A
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 sus VOLTS Ic (max) AMPS 1*FE@ I c / V ce DEVICE TYPE 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A ^CEO PACKAGE PNP TO-66 VcE(s»t) pr D* WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125


    OCR Scan     		2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 transistor A7a 2N6212A PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125


    OCR Scan     		2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 PDF

    Transistors bd 133

    Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
    Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20


    OCR Scan     		TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135 PDF

    zo 103 ma

    Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
    Text: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­


    OCR Scan     		Q62702-F456 Q62702-F457 103MHz 102mA zo 103 ma BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67 PDF