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    TO-89 NPN Search Results

    TO-89 NPN Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy

    TO-89 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2413

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2413 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC


    Original     		PDF OT-89 2SD2413 OT-89 200MHz 2SD2413

    PXT3904

    Abstract: PXT3906 marking 1A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3904 TRANSISTOR NPN 1. BASE FEATURES 1 z Compliment to PXT3906 z Low current z Low voltage 2. COLLECTOR 2 3 3. EMITTER MARKING: 1A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-89 OT-89 PXT3904 PXT3906 100mA 100MHz 10Hz-15 PXT3904 PXT3906 marking 1A

    2SB1188

    Abstract: 2SD1766 marking 82 sot marking 02A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1766 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) z Complements to 2SB1188 2. COLLECTOR 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-89 2SD1766 OT-89 2SB1188 500mA 100MHz 2SB1188 2SD1766 marking 82 sot marking 02A

    Schottky Diode SOT-89

    Abstract: 2SC3279 ILC6370 ILC6370BP-50 ILC6371 ILC6371BP-50 MA735 100uH inductor
    Text: www.fairchildsemi.com ILC6370 SOT-89 Step up Switching Regulator with Shutdown Features Description • • • • 50mA boost converter in 5-lead SOT-89 package. Only 3 external components are needed to complete the switcher design, and frequency options of 50, 100, and 180kHz gives


    Original     		PDF ILC6370 OT-89 180kHz 900mV Schottky Diode SOT-89 2SC3279 ILC6370 ILC6370BP-50 ILC6371 ILC6371BP-50 MA735 100uH inductor

    2SC327

    Abstract: C-47U
    Text: www.fairchildsemi.com ILC6370 SOT-89 Step up Switching Regulator with Shutdown Features Description • • • • 50mA boost converter in 5-lead SOT-89 package. Only 3 external components are needed to complete the switcher design, and frequency options of 50, 100, and 180kHz gives


    Original     		PDF ILC6370 OT-89 900mV 180kHz 2SC327 C-47U

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com ILC6390/91 SOT-89 Step-Up PFM Switcher with Auto-Load Sense Features Description • • • • • 50 mA boost converter using Pulse Frequency Modulation, or PFM, technique, in 5-lead SOT-89 or a 5-lead SOT-23 package. Only 3 external components are needed to complete


    Original     		PDF ILC6390/91 OT-89 900mV OT-23 ILC6390 ILC6390CM30X

    2SD965AL-AB3-R

    Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
    Text: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89


    Original     		PDF 2SD965/A 2SD965 2SD965A OT-89 2SD965L/2SD965AL 2SD965-AB3-R 2SD965L-AB3-R 2SD965A-AB3-R 2SD965AL-AB3-R OT-89 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  1 FEATURES SOT-223 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S  SOT-89 APPLICATIONS * Audio power amplifier * DC-DC convertor


    Original     		PDF 2SD882S OT-223 2SB772S OT-89 2SD882SL-x-AA3-R 2SD882SG-x-AA3-R 2SD882SL-x-AB3-R 2SD882SG-x-AB3-R 2SD882SL-x-T92-B 2SD882SG-x-T92-B

    2SC2881L

    Abstract: 032 b
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION


    Original     		PDF 2SC2881 120MHz 2SA1201 OT-89 2SC2881L-x-AB3-R 2SC2881G-x-AB3-R OT-89 QW-R204-032 QW-R208-032 2SC2881L 032 b

    BCP194

    Abstract: BCP195
    Text: BCP194 NPN Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Description The BCP194 is designed for medium power amplifier applications. Features * 1 Amp Continuous Current * 60 Volt VCEO * Complementary to BCP195


    Original     		PDF BCP194 OT-89 BCP194 BCP195 01-Jun-2002 500mA 100mA 500mA 100MHz BCP195

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS 1 1 SOT-89 SOT-223 1 1 TO-92 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92NL 1 1 TO-126 TO-126C 1 1 TO-251


    Original     		PDF 2SD669/A OT-89 OT-223 2SB649/A O-92NL O-126 O-126C O-251 O-252 2SD669L/2SD669AL

    2SD882SL

    Abstract: 2SD882S
    Text: UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772S 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator SOT-89 1:EMITTER 2:COLLECTOR 3:BASE


    Original     		PDF 2SD882S 2SB772S OT-89 2SD882SL QW-R208-007 2SD882SL 2SD882S

    2N5551G

    Abstract: transistor 2n5551 2N5551-NPN 2N5551 2N5551 circuit VCEO160V 2N5551-X-AB3-R C2N5551
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain „ APPLICATIONS 1 TO-92 * Telephone switching circuit * Amplifier „ ORDERING INFORMATION


    Original     		PDF 2N5551 OT-89 2N5551-x-AB3-R 2N5551-x-T92-B 2N5551-x-T92-K 2N5551L-x-AB3-R 2N5551L-x-T92-B 2N5551L-x-T92-K 2N5551G-x-AB3-R 2N5551G-x-T92-B 2N5551G transistor 2n5551 2N5551-NPN 2N5551 2N5551 circuit VCEO160V 2N5551-X-AB3-R C2N5551

    Untitled

    Abstract: No abstract text available
    Text: WTM1624 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Description SOT-89 The WTM1624 applies to voltage regulators, relay drivers,lamp drivers,and electrical equipment. Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage


    Original     		PDF WTM1624 OT-89 WTM1624 28-Dec-07 OT-89

    FJC1386

    Abstract: FJC2098
    Text: FJC2098 FJC2098 Camera Strobe Flash Application • Complement to FJC1386 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF FJC2098 FJC1386 OT-89 FJC1386 FJC2098

    E50U

    Abstract: c2a marking 2SD2150 sot89 "NPN TRANSISTOR" marking C2A
    Text: 2SD2150 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 Features 4.4~4.6 1 1.4~1.8 2 1.4~1.6 3 3.94~4.25 1.BASE 2.COLLECTOR 2.3~2.6 * Excellent Current-to-Gain Characteristics


    Original     		PDF 2SD2150 OT-89 E50U c2a marking 2SD2150 sot89 "NPN TRANSISTOR" marking C2A

    Untitled

    Abstract: No abstract text available
    Text: KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor


    Original     		PDF KSC2881 120MHz KSA1201 OT-89 250mm2x0 KSC2881YTF KSC2881OTF OT-89

    KSA1203

    Abstract: KSC2883
    Text: KSC2883 KSC2883 Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC2883 KSA1203 OT-89 250mm2x0 KSA1203 KSC2883

    2SD2150

    Abstract: transistor marking 2a marking CFR
    Text: 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE SAT =0.5V(Max.) for IC / IB=2A/0.1A


    Original     		PDF 2SD2150 OT-89 100mA -500mA, 100MHz 6-Nov-2009 2SD2150 transistor marking 2a marking CFR

    Untitled

    Abstract: No abstract text available
    Text: 2SD2537 Datasheet NPN 1.2A 25V Middle Power Transistor lOutline Parameter Value VCEO IC 25V 1.2A MPT3 Base Collector Emitter 2SD2537 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) High DC Current gain hFE= 820 to 1,800 3) High VEBO VEBO=12V(Min.)


    Original     		PDF 2SD2537 SC-62) OT-89> 500mA/10mA) R1102A

    KSB1121

    Abstract: KSD1621
    Text: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		PDF KSD1621 KSB1121 OT-89 KSD1621 KSB1121

    transistor TE 901

    Abstract: No abstract text available
    Text: TILI 89-1 THRU TILI 89-4 TILI 90-1 THRU TIL190-4 OPTOCOUPLERS/OPTOISOLATORS D 2 9 8 7 , JANUARY 1 9 8 7 -R E V IS E D JULY 198 9 • High Direct-Current Transfer Ratios, 5 0 0 % Minimum at Ip - 10 mA and Up to 1 5 0 0 % at Ip • 2 mA with Choice of Four Categories


    OCR Scan     		PDF TIL190-4 TIL189 TIL189-1 TIL189-4 TIL190-1 transistor TE 901

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinC^onfigu ration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings


    OCR Scan     		PDF Q68000-A8396 OT-89 SXT3904

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2883 LOW FREQUENCY POWER AMPLIFIER S O T-89 • 3W O u tp u t A pplication • C ollector D issipation Pc=1~2W : M ounted on C eram ic Board • C om plem ent to KSA1203 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic


    OCR Scan     		PDF KSC2883 KSA1203