TO-89 NPN Search Results

TO-89 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

TO-89 NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SD2413 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2413 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC	Original	OT-89 2SD2413 OT-89 200MHz 2SD2413	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2413 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC	Original	OT-89-3L 2SD2413 OT-89-3L 200MHz	PDF
2SB766A Abstract: 2SD874A Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874A SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A z	Original	OT-89 2SD874A OT-89 2SB766A 500mA 500mA 200MHz 2SB766A 2SD874A	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD874A SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A	Original	OT-89-3L 2SD874A OT-89-3L 2SB766A 500mA 500mA 200MHz	PDF
PXT8050 Abstract: Y1 SOT-89 marking y1 marking y1 sot-89 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	OT-89 PXT8050 PXT8550 100mA 800mA 800mA, 30MHz PXT8050 Y1 SOT-89 marking y1 marking y1 sot-89	PDF
2SC4115 Abstract: 2SA1585 4115S 4115 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89 FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585	Original	OT-89 2SC4115 OT-89 2SA1585 100MHz 4115Q 4115R 4115S 2SC4115 2SA1585 4115S 4115	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX51,BCX52,BCX53 TRANSISTOR PNP 1. BASE FEATURES z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS	Original	OT-89-3L OT-89-3L BCX51 BCX52 BCX53 BCX54 BCX55 BCX56 BCX51-10	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX51,BCX52,BCX53 TRANSISTOR PNP 1. BASE FEATURES z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS	Original	OT-89-3L OT-89-3L BCX51 BCX52 BCX53 BCX54 BCX55 BCX56 BCX51-10	PDF
2SD2150 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 2SD2150 TRANSISTOR Plastic-Encapsulate Transistors SOT-89 NPN FEATURES z Excellent current-to-gain characteristics z Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A	Original	OT-89 2SD2150 100mA 500mA 100MHz tp300S, 2SD2150	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR NPN 1. BASE FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213	Original	OT-89-3L 89-3L 2SC2873 2SA1213	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR NPN 1. BASE FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213	Original	OT-89-3L 89-3L 2SC2873 2SA1213	PDF
BCx56 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR NPN 1. BASE FEATURES z PNP Complements to BCX51,BCX52,BCX53 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS	Original	OT-89-3L OT-89-3L BCX54 BCX55 BCX56 BCX51 BCX52 BCX53 BCX54-10 BCx56	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR NPN 1. BASE FEATURES z PNP Complements to BCX51,BCX52,BCX53 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS	Original	OT-89-3L OT-89-3L BCX54 BCX55 BCX56 BCX51 BCX52 BCX53 BCX54-10	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89-3L FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585	Original	OT-89-3L 2SC4115 OT-89-3L 2SA1585 100MHz 4115Q 4115R 4115S	PDF

Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR SOT-89-3L NPN FEATURES z Excellent current-to-gain characteristics z Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A	Original	OT-89-3L 2SD2150 OT-89-3L 100mA 500mA 100MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BSR43 TRANSISTOR NPN FEATURES z Low Voltage z High Current z Complement to BSR33 1. BASE 2. COLLECTOR 3. EMITTER AAPLICATIONS z Thick and Thin-Film Circuits	Original	OT-89-3L OT-89-3L BSR43 BSR33 100mA 500mA 150mA 500mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier	Original	OT-89-3L OT-89-3L 2SC2884 2SA1204 100mA 700mA 500mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1664 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER	Original	OT-89-3L 2SD1664 OT-89-3L 500mA/50mA) 2SB1132 100mA 100MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC3205 SOT-89-3L TRANSISTOR NPN 123 1. BASE FEATURES 2. COLLECTOR z High current application z Complementary to KTA1273 3. EMITTER MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)	Original	OT-89-3L KTC3205 OT-89-3L KTA1273 500mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4376 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z High Current Application z Complementary to KTA1664 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-89-3L OT-89-3L KTC4376 KTA1664 100mA 700mA 500mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BC869 TRANSISTOR PNP 1. BASE FEATURES  NPN Complement to BC868  Low Voltage  High Current 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-89-3L OT-89-3L BC869 BC868 -10mA, 100MHz BC869-16 BC869-25	PDF
2SD882GP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD 2SD882GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)	Original	2SD882GP SC-62/SOT-89 SC-62/SOT-89) 2SD882GP	PDF
2SD882P Abstract: P82 transistor transistor MW 882 2SD882PT 10A Switching convertor 882 transistor Text: CHENMKO ENTERPRISE CO.,LTD 2SD882PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)	Original	2SD882PT SC-62/SOT-89 SC-62/SOT-89) 2SD882P P82 transistor transistor MW 882 2SD882PT 10A Switching convertor 882 transistor	PDF
marking 1s Abstract: 1s SOT-89 Text: 2SD2413 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features 2.6 4.25 2.4 3.75 High collector to base voltage VCBO High collector to emitter voltage VCEO Large collector power dissipation PC Low collector to emitter saturation voltage VCE(sat)	Original	2SD2413 OT-89 OT-89 200MHz marking 1s 1s SOT-89	PDF

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TO-89 NPN Search Results

TO-89 NPN Result Highlights (5)

TO-89 NPN Datasheets Context Search

2SD2413

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2SB766A

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PXT8050

2SC4115

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2SD2150

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BCx56

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2SD882GP

2SD882P

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