Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO-92 MOSFET Search Results

    TO-92 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    TO-92 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N60 N-Channel Power MOSFET TO-92 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


    Original     		CJV01N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS 2N7000 TO-92 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		2N7000 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS 2N7000 TO-92 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		2N7000 500mA 200mA 500mA PDF

    2N7000 TO-92

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS 2N7000 TO-92 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		2N7000 500mA 2N7000 TO-92 PDF

    stq1ne10l

    Abstract: Q1NE10L stq1ne10l-ap
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92


    Original     		STQ1NE10L STQ1NE10L STQ1NE10L-AP Q1NE10L PDF

    RL30A

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability


    Original     		2N7000 500mA 200mA 500mA, 500mA RL30A PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability


    Original     		2N7000 500mA 200mA 500mA, 500mA 2N7000 PDF

    2N7000 TO-92

    Abstract: to-92 mosfet VDS-10 2N7000
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N7000 TO-92 MOSFET N-Channel 1. SOURCE FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		2N7000 500mA 200mA 500mA 2N7000 TO-92 to-92 mosfet VDS-10 2N7000 PDF

    equivalent of BS170

    Abstract: 2n7000 equivalent mosfet bs170 BS270 mosfet 2n7000 2N7000BU EQUIVALENT FOR bs170 2N7000 MOSFET 2N7000TA BS170
    Text: Discrete MOSFET TO-92 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-92 N-Channel BS270 60 Single 2 - - - - 0.4 0.63 2N7000BU 60 Single 5 - - - - 0.2 0.4 2N7000TA 60 Single


    Original     		BS270 2N7000BU 2N7000TA BS170 2N7000 FQNL2N50B FQNL1N50B equivalent of BS170 2n7000 equivalent mosfet bs170 BS270 mosfet 2n7000 2N7000BU EQUIVALENT FOR bs170 2N7000 MOSFET 2N7000TA BS170 PDF

    TP0610T

    Abstract: SOT-89 N2 N2 SOT-23 sot-89 VP0109 LP0701 TP0604 TP0606 TP0620 TP2104
    Text: Selector Guide P-Channel Enhancement Mode MOSFETs Device LP0701 BVDSS V -16.5 RDS(ON) max ID(ON) min CISS max VGS(TH) max (Ω) (A) (pF) (V) 1.5 -1.25 250 -1.0 Package Options Application Notes 3-Lead TO-92 (N3) AN-D14 8-Lead SOIC (LG) - 3-Lead TO-92 (N3)


    Original     		LP0701 AN-D14 TP0604 TP0606 TP0610T OT-23 TP0620 AN-H53 TP2104 TP2424 TP0610T SOT-89 N2 N2 SOT-23 sot-89 VP0109 LP0701 TP0604 TP0606 TP0620 TP2104 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 2. GATE 3. DRAIN 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		2N7000 500mA 200mA 500mA, 500mA 2N7000 PDF

    ST2N

    Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
    Text: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications


    Original     		2N7000 2N7002 OT23-3L OT23-3L ST2N 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97 PDF

    REGULATOR mc7812ct

    Abstract: MC7815BT c843 TL494CN UC3842AN LM340T12 MC79L12ACP LM340AT12 LM323AT SG3525AN
    Text: ON Semiconductor Voltage Regulators and Switching Regulators Voltage Regulators Continued Linear Voltage Regulators (Continued) Fixed Output (Continued) Mfr.'s Type Positive Regulator Negative Regulator Case 29/TO-92 Case 221A Case 369A Case 751/SO-8 Case 29/TO-92


    Original     		29/TO-92 751/SO-8 751/SO-8 LM340AT-5 MC78T05CT MC78T05ACT LM323AT MC7806CT MC7906CT REGULATOR mc7812ct MC7815BT c843 TL494CN UC3842AN LM340T12 MC79L12ACP LM340AT12 LM323AT SG3525AN PDF

    Linear Regulator sot-89

    Abstract: Fortune Semiconductor FS8856 FS8856-33CL FS8856-33PL
    Text: FS8856 550mA LDO Linear Regulator General Description Ordering Information The FS8856 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +6.5V and delivers 550mA output current. FS8856-xx x x Package D : TO-92 E : TO-92


    Original     		FS8856 550mA FS8856 FS8856-xx OT-223 OT-89 Linear Regulator sot-89 Fortune Semiconductor FS8856-33CL FS8856-33PL PDF

    P-Channel Depletion Mosfet datasheet

    Abstract: pj 72 diode P-Channel Depletion-Mode sot 23 702 N-Channel Depletion-Mode MOSFET high voltage pj 54 diode n1 sot-23 ic 701 n channel depletion MOSFET 702 mosfet
    Text: 1 Product Nomenclature/Ordering Information • N- and P-channel low/high voltage complements for simple circuit configuration and low power consumption. • Surface mount packaging. • TO-92, tape & reel, and lead bends to fit into TO-5, TO-18, or TO-220 sockets; TO-92 also available with surface mount


    Original     		O-220 P-Channel Depletion Mosfet datasheet pj 72 diode P-Channel Depletion-Mode sot 23 702 N-Channel Depletion-Mode MOSFET high voltage pj 54 diode n1 sot-23 ic 701 n channel depletion MOSFET 702 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: SSK2N7002E N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.4A TO-92 RDS(ON) (Ω) Max 3.0 @VGS = 10V 4.0 @VGS = 5V S G D D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. TO-92 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		SSK2N7002E PDF

    2N7002 SOT23

    Abstract: ST2N transistor 2N7002 ST2N 2N7000 codes marking st2n 2N7002 MARKING marking L2 SOT23 6 2N7002- SOT23 MOSFET codes marking 2N7002
    Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application


    Original     		2N7000 2N7002 OT23-3L, OT23-3L JESD97. 2N7000, 2N7002 SOT23 ST2N transistor 2N7002 ST2N 2N7000 codes marking st2n 2N7002 MARKING marking L2 SOT23 6 2N7002- SOT23 MOSFET codes marking 2N7002 PDF

    ST2N

    Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
    Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application


    Original     		2N7000 2N7002 OT23-3L, OT23-3L ST2N 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97 PDF

    ST2N transistor

    Abstract: 2N7000 ST2N 2N7002 st2n codes marking st2n low vgs mosfet to-92 transistor ST2N 2N7000 MOSFET 2N7002 JESD97
    Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application


    Original     		2N7000 2N7002 OT23-3L, OT23-3L JESD97. 2N7000, ST2N transistor 2N7000 ST2N 2N7002 st2n codes marking st2n low vgs mosfet to-92 transistor ST2N 2N7000 MOSFET 2N7002 JESD97 PDF

    bfw11 jfet

    Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
    Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72


    OCR Scan     		2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960 PDF

    2M5457

    Abstract: SOT-23 Rod MOSFET P channel SOT-23 N JFET
    Text: Discretes continued Low Leakage Diodes JFET Amplifier Applications High G ain P/N P/N Id s s •g s s m A (m in ) pA(m a x) gis m S (m in ) N 3.0 3.5 4.0 4.0 6.0 20 20 20 5 5 5 20 20 5 TO-92 TO-92 TO-92 TO-92 TO-92 N N N N N N P P 5 5 10 20 20 5 TO-92 TO-92


    OCR Scan     		2N4416/A 2N5484 2N5485 2N5486 PN4416 SST271 2M5457 2N5458 2N5459 DPAD10 SOT-23 Rod MOSFET P channel SOT-23 N JFET PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF

    VNDQ1CHP

    Abstract: VN0300M VNDQ1 VN0300 VNDQ03 TN0201L TN0401L VN0300L VQ1001J VQ1001P
    Text: ^CX Siliconix VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors -AmM incorporated TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) rDS(ON) (Ù) •d (A) PACKAGE VN0300L 30 1.2 0.64 TO-92 VN0300M 30 1.2 0.67 TO-237 1 SOURCE 2 GATE


    OCR Scan     		VN0300 O-226AA) VN0300L VN0300M O-237 VNDQ03 VN0300M VNDQ1CHP VNDQ1 VNDQ03 TN0201L TN0401L VQ1001J VQ1001P PDF

    Small Signal MOSFET

    Abstract: No abstract text available
    Text: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES TO-92 1 • Fast switching speeds • TO-92 Package ' V ’ i 1. S o u rc e 2. Gate 3. Drain PRODUCT SUMMARY Part Number V ds R d S o ii ta< on ) 2N7000 60V 5.0 n 200 mA MAXIMUM RATINGS Characteristic Drain-Source Voltage (1)


    OCR Scan     		2N7000 2N7000 Small Signal MOSFET PDF