Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N60 N-Channel Power MOSFET TO-92 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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CJV01N60
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS 2N7000 TO-92 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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2N7000
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS 2N7000 TO-92 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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2N7000
500mA
200mA
500mA
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2N7000 TO-92
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS 2N7000 TO-92 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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2N7000
500mA
2N7000 TO-92
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stq1ne10l
Abstract: Q1NE10L stq1ne10l-ap
Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92
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STQ1NE10L
STQ1NE10L
STQ1NE10L-AP
Q1NE10L
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RL30A
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability
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2N7000
500mA
200mA
500mA,
500mA
RL30A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability
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2N7000
500mA
200mA
500mA,
500mA
2N7000
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2N7000 TO-92
Abstract: to-92 mosfet VDS-10 2N7000
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N7000 TO-92 MOSFET N-Channel 1. SOURCE FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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2N7000
500mA
200mA
500mA
2N7000 TO-92
to-92 mosfet
VDS-10
2N7000
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equivalent of BS170
Abstract: 2n7000 equivalent mosfet bs170 BS270 mosfet 2n7000 2N7000BU EQUIVALENT FOR bs170 2N7000 MOSFET 2N7000TA BS170
Text: Discrete MOSFET TO-92 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-92 N-Channel BS270 60 Single 2 - - - - 0.4 0.63 2N7000BU 60 Single 5 - - - - 0.2 0.4 2N7000TA 60 Single
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BS270
2N7000BU
2N7000TA
BS170
2N7000
FQNL2N50B
FQNL1N50B
equivalent of BS170
2n7000 equivalent
mosfet bs170
BS270
mosfet 2n7000
2N7000BU
EQUIVALENT FOR bs170
2N7000 MOSFET
2N7000TA
BS170
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TP0610T
Abstract: SOT-89 N2 N2 SOT-23 sot-89 VP0109 LP0701 TP0604 TP0606 TP0620 TP2104
Text: Selector Guide P-Channel Enhancement Mode MOSFETs Device LP0701 BVDSS V -16.5 RDS(ON) max ID(ON) min CISS max VGS(TH) max (Ω) (A) (pF) (V) 1.5 -1.25 250 -1.0 Package Options Application Notes 3-Lead TO-92 (N3) AN-D14 8-Lead SOIC (LG) - 3-Lead TO-92 (N3)
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LP0701
AN-D14
TP0604
TP0606
TP0610T
OT-23
TP0620
AN-H53
TP2104
TP2424
TP0610T
SOT-89 N2
N2 SOT-23
sot-89
VP0109
LP0701
TP0604
TP0606
TP0620
TP2104
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 2. GATE 3. DRAIN 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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2N7000
500mA
200mA
500mA,
500mA
2N7000
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ST2N
Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
Text: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications
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2N7000
2N7002
OT23-3L
OT23-3L
ST2N
2n7000 equivalents
2N7002
2n7000
2N7002 MARKING
2N7000G
JESD97
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REGULATOR mc7812ct
Abstract: MC7815BT c843 TL494CN UC3842AN LM340T12 MC79L12ACP LM340AT12 LM323AT SG3525AN
Text: ON Semiconductor Voltage Regulators and Switching Regulators Voltage Regulators Continued Linear Voltage Regulators (Continued) Fixed Output (Continued) Mfr.'s Type Positive Regulator Negative Regulator Case 29/TO-92 Case 221A Case 369A Case 751/SO-8 Case 29/TO-92
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29/TO-92
751/SO-8
751/SO-8
LM340AT-5
MC78T05CT
MC78T05ACT
LM323AT
MC7806CT
MC7906CT
REGULATOR mc7812ct
MC7815BT
c843
TL494CN
UC3842AN
LM340T12
MC79L12ACP
LM340AT12
LM323AT
SG3525AN
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Linear Regulator sot-89
Abstract: Fortune Semiconductor FS8856 FS8856-33CL FS8856-33PL
Text: FS8856 550mA LDO Linear Regulator General Description Ordering Information The FS8856 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +6.5V and delivers 550mA output current. FS8856-xx x x Package D : TO-92 E : TO-92
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FS8856
550mA
FS8856
FS8856-xx
OT-223
OT-89
Linear Regulator sot-89
Fortune Semiconductor
FS8856-33CL
FS8856-33PL
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P-Channel Depletion Mosfet datasheet
Abstract: pj 72 diode P-Channel Depletion-Mode sot 23 702 N-Channel Depletion-Mode MOSFET high voltage pj 54 diode n1 sot-23 ic 701 n channel depletion MOSFET 702 mosfet
Text: 1 Product Nomenclature/Ordering Information • N- and P-channel low/high voltage complements for simple circuit configuration and low power consumption. • Surface mount packaging. • TO-92, tape & reel, and lead bends to fit into TO-5, TO-18, or TO-220 sockets; TO-92 also available with surface mount
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O-220
P-Channel Depletion Mosfet datasheet
pj 72 diode
P-Channel Depletion-Mode
sot 23 702
N-Channel Depletion-Mode MOSFET high voltage
pj 54 diode
n1 sot-23
ic 701
n channel depletion MOSFET
702 mosfet
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Untitled
Abstract: No abstract text available
Text: SSK2N7002E N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.4A TO-92 RDS(ON) (Ω) Max 3.0 @VGS = 10V 4.0 @VGS = 5V S G D D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. TO-92 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
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SSK2N7002E
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2N7002 SOT23
Abstract: ST2N transistor 2N7002 ST2N 2N7000 codes marking st2n 2N7002 MARKING marking L2 SOT23 6 2N7002- SOT23 MOSFET codes marking 2N7002
Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application
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2N7000
2N7002
OT23-3L,
OT23-3L
JESD97.
2N7000,
2N7002 SOT23
ST2N transistor
2N7002
ST2N
2N7000
codes marking st2n
2N7002 MARKING
marking L2 SOT23 6
2N7002- SOT23 MOSFET
codes marking 2N7002
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ST2N
Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application
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2N7000
2N7002
OT23-3L,
OT23-3L
ST2N
2N7002
2N7000
ST2N transistor
2n7000 equivalents
2n7000 equivalent
2N7002 MARKING
DSS SOT23
2N7000G
JESD97
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ST2N transistor
Abstract: 2N7000 ST2N 2N7002 st2n codes marking st2n low vgs mosfet to-92 transistor ST2N 2N7000 MOSFET 2N7002 JESD97
Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application
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2N7000
2N7002
OT23-3L,
OT23-3L
JESD97.
2N7000,
ST2N transistor
2N7000
ST2N
2N7002 st2n
codes marking st2n
low vgs mosfet to-92
transistor ST2N
2N7000 MOSFET
2N7002
JESD97
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bfw11 jfet
Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72
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OCR Scan
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PDF
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2N4859
2N4860
2N4861
BF245A/0
BF245A
BF245B
BF245C
BF247A
BF247B
BF247C
bfw11 jfet
jfet bfw10
Field Effect Transistors
BFW12
BFW10 JFET
BF256B
BF964S
BF96
BF964
BF960
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2M5457
Abstract: SOT-23 Rod MOSFET P channel SOT-23 N JFET
Text: Discretes continued Low Leakage Diodes JFET Amplifier Applications High G ain P/N P/N Id s s •g s s m A (m in ) pA(m a x) gis m S (m in ) N 3.0 3.5 4.0 4.0 6.0 20 20 20 5 5 5 20 20 5 TO-92 TO-92 TO-92 TO-92 TO-92 N N N N N N P P 5 5 10 20 20 5 TO-92 TO-92
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OCR Scan
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PDF
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2N4416/A
2N5484
2N5485
2N5486
PN4416
SST271
2M5457
2N5458
2N5459
DPAD10
SOT-23 Rod
MOSFET P channel SOT-23
N JFET
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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OCR Scan
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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VNDQ1CHP
Abstract: VN0300M VNDQ1 VN0300 VNDQ03 TN0201L TN0401L VN0300L VQ1001J VQ1001P
Text: ^CX Siliconix VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors -AmM incorporated TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) rDS(ON) (Ù) •d (A) PACKAGE VN0300L 30 1.2 0.64 TO-92 VN0300M 30 1.2 0.67 TO-237 1 SOURCE 2 GATE
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OCR Scan
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PDF
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VN0300
O-226AA)
VN0300L
VN0300M
O-237
VNDQ03
VN0300M
VNDQ1CHP
VNDQ1
VNDQ03
TN0201L
TN0401L
VQ1001J
VQ1001P
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Small Signal MOSFET
Abstract: No abstract text available
Text: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES TO-92 1 • Fast switching speeds • TO-92 Package ' V ’ i 1. S o u rc e 2. Gate 3. Drain PRODUCT SUMMARY Part Number V ds R d S o ii ta< on ) 2N7000 60V 5.0 n 200 mA MAXIMUM RATINGS Characteristic Drain-Source Voltage (1)
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OCR Scan
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2N7000
2N7000
Small Signal MOSFET
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