TO18 package
Abstract: Aluminum alloy 8053 to18 case ALLOY 52 to18 NTE412 thermal resistance case heat sink
Text: NTE412 Hardware Heat Sink for TO18 Type Package Description: The NTE412 is a very low cost 1-peice heat sink for plastic “D”, plastic TO18, and metal can TO18 type transistors. Unit presses onto case requiring no special assembly tool and can be installed after as-
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NTE412
NTE412
TO18 package
Aluminum alloy 8053
to18 case
ALLOY 52
to18
thermal resistance case heat sink
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IR photodiode sensor
Abstract: PSS1-7-TO18 PIN photodiode 500 nm
Text: DATA SHEET PSS1-7-TO18 SILICON PHOTODIODE TYPE PSS1-7-TO18 PSS1-7-TO18 is a PIN Silicon PHOTODIODE with an Active Area 1.0 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically
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PSS1-7-TO18
PSS1-7-TO18
IR photodiode sensor
PIN photodiode 500 nm
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2n5268
Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
Text: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72
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2N2608
2N2609
2N3328
2N3329
2N3330
2N3331
2N3332
KK3820
KK4342
KK4343
2n5268
2N5267
2N5265
KK4360
2N3329
2N3330
2N3331
2N5021
FP22 to92
2N5266
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NTE4011B
Abstract: NTE4001B NTE955M NTE4013B NTE7486 NTE7490 NTE956 NTE4081B NTE931 NTE4069
Text: NTE Electronics Transistors, Diodes, Rectifiers and ICs Silicon Unijunction Transistor UJT Stock No. Mfr.Õs Type Case Style 935-6196 935-6200 935-6202 6401 6409 6410 TO18 TO18 TO92 Maximum RMS Emitter Current Intrinsic Stand Off Ratio Interbase Resistance
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TE7475
NTE992
NTE7476
NTE2013
NTE7486
NTE4001B
NTE7490
NTE4011B
NTE74121
NTE4013B
NTE955M
NTE956
NTE4081B
NTE931
NTE4069
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2N3055 TO220
Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor
Text: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC max VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100
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BC107
BC108
2N3904
ZTX300
2N3053
BFY51
TIP31A
2N3055
BC178
BC559
2N3055 TO220
NPN Transistor 2N3055 darlington
100 amp npn darlington power transistors
transistor BC107 specifications
tip122 tip127 audio amp
NPN Transistor TO92
10 amp npn darlington power transistors
transistor 2n3053
DATASHEET Transistor BC107
2N3055 NPN Transistor
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VN10K-TO18
Abstract: No abstract text available
Text: VN10K-TO18 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOSFET 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) D 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. G S 2.54 (0.100) Nom. 3 1 2 TO18 PACKAGE
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VN10K-TO18
300ms
VN10K-TO18
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DUV-HL18M
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL18M • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 24 deg. Description DUV-HL18M is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a
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DUV-HL18M
DUV-HL18M
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL18W • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 40 deg. Description DUV-HL18W is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a
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DUV-HL18W
DUV-HL18W
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL46N • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 6 deg. Description DUV-HL46N is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a
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DUV-HL46N
DUV-HL46N
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-FW18 • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Flat SiO2 window Beam angle 113 deg. Description DUV-FW18 is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a flat quartz
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DUV-FW18
DUV-FW18
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Untitled
Abstract: No abstract text available
Text: LIE-216-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; thermal compensation; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - - + Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10
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LIE-216-#
100nF
lie-216
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Untitled
Abstract: No abstract text available
Text: TSTS750. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them
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TSTS750.
D-74025
08-Apr-04
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tsts 7503
Abstract: No abstract text available
Text: TSTS750. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them
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TSTS750.
D-74025
11-May-04
tsts 7503
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Untitled
Abstract: No abstract text available
Text: LIE-202-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10 Frequency [Hz] 100 Frequency [Hz]
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LIE-202-#
100nF
lie-202
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tsts 7503
Abstract: TSTS750 TSTS7500 TSTS7501 TSTS7502 TSTS7503
Text: TSTS750. GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their flat glass windows make them ideal for use with external optics.
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TSTS750.
D-74025
15-Jul-96
tsts 7503
TSTS750
TSTS7500
TSTS7501
TSTS7502
TSTS7503
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NTE123A
Abstract: NTE159M
Text: NTE123A NPN & NTE159M (PNP) Silicon Complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from
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NTE123A
NTE159M
300MHz
NTE123A
NTE159M
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Untitled
Abstract: No abstract text available
Text: TSTS730. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high
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TSTS730.
D-74025
11-May-04
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Untitled
Abstract: No abstract text available
Text: TSTA7500 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it
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TSTA7500
TSTA7500
D-74025
06-May-04
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Untitled
Abstract: No abstract text available
Text: TSTA7100 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very
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TSTA7100
TSTA7100
D-74025
08-Apr-04
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TSTA7100
Abstract: No abstract text available
Text: TSTA7100 Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a very
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TSTA7100
TSTA7100
D-74025
20-May-99
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TSTA7300
Abstract: No abstract text available
Text: TSTA7300 Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high
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TSTA7300
TSTA7300
D-74025
20-May-99
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TSTA7500
Abstract: No abstract text available
Text: TSTA7500 Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its flat glass window makes it
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TSTA7500
TSTA7500
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: TSTA7300 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high
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TSTA7300
TSTA7300
D-74025
06-May-04
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Untitled
Abstract: No abstract text available
Text: TSTA7100 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very
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TSTA7100
TSTA7100
D-74025
06-May-04
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