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    TO18 LASER Search Results

    TO18 LASER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F157/BFA Rochester Electronics LLC DATA SEL/MULTIPLEXER; QUAD 2-INPUT Visit Rochester Electronics LLC Buy
    54F251A/BEA Rochester Electronics LLC 54F251 - DATA SEL/MULTIPLEXER, 8-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33905BEA) Visit Rochester Electronics LLC Buy
    54LS298/BEA Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) Visit Rochester Electronics LLC Buy
    54S153/BEA Rochester Electronics LLC 54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) Visit Rochester Electronics LLC Buy
    54LS298/BFA Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BFA) Visit Rochester Electronics LLC Buy

    TO18 LASER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PSS1515Q-6-TO18

    Abstract: PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP
    Text: DATA SHEET PSS1515Q-6-TO18 SILICON PHOTODIODE TYPE PSS1515Q-6-TO18 PSS1515Q-6-TO18 is a quadrant silicon photodiode with a very small active area of 0.3 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently


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    PDF PSS1515Q-6-TO18 PSS1515Q-6-TO18 PSS1515Q-6-C. PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP

    aifotec

    Abstract: DFB-LASER 2 Wavelength Laser Diode dfb laser gain coupled DFB DFB chip
    Text: www.aifotec.com DFB-Laser Diode in Coaxial Package The uncooled DFB-LD Distributed Feedback Laser Diode Description > Gain coupled, Multi-Quantum-Well structure (InGaAsP/InP) within a hermetically sealed subcomponent, comparable to a TO18 housing. > A ternary photodiode is used for


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    PDF D-82152 aifotec DFB-LASER 2 Wavelength Laser Diode dfb laser gain coupled DFB DFB chip

    LDM_0980_050M_50

    Abstract: No abstract text available
    Text: LDM-0980-050m-50 TECHNICAL DATA Infrared Laser Diode Features • CW Output Power: 50 mW • Typical 975 nm Emission Wavelength • High-efficiency Quantum Well Structure • TO18 or TO5 Package Applications • Solid-state Laser Pumping • Medical Usage


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    PDF LDM-0980-050m-50 LDM_0980_050M_50

    Untitled

    Abstract: No abstract text available
    Text: LIE-216-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; thermal compensation; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - - + Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10


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    PDF LIE-216-# 100nF lie-216

    Untitled

    Abstract: No abstract text available
    Text: LIE-202-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10 Frequency [Hz] 100 Frequency [Hz]


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    PDF LIE-202-# 100nF lie-202

    DL-7146-101S

    Abstract: No abstract text available
    Text: DL-7146-101S • Description DL-7146-101S is a GaN based, multi transverse mode, 405 nm violet laser diode in TO18 package with photodiode. It is an efficient radiation source for many applications featuring low threshold current and high operating temperatures up to 75°C


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    PDF DL-7146-101S DL-7146-101S

    WSLD-1064-050m-1-PD

    Abstract: WSLD-1064-50M-1-PD
    Text: Laser Diodes 1064nm 50mw SM laser diode with PD 1060nm | 50mw | Single Mode LD| 5.6mm TO18 Package WSLD-1064-050m-1-PD 1064nm Laser Diode PARAMETER 50mw SYMBOL VALUE UNIT Reverse Voltage Vr 2.0 V Operating Temperature T op -10~+40 °C Storage Temperature T stg


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    PDF 1064nm 1060nm WSLD-1064-050m-1-PD 1064nm /-10nm divers-vis/wslp/wsld-1064-50m-1-pd WSLD-1064-050m-1-PD WSLD-1064-50M-1-PD

    InfraTec

    Abstract: LIE-200 "Pyroelectric Detector" pyroelectric detector
    Text: single channel; TO18 housing; small chip size; JFET; current mode; feedback 1GOhm; HOUSING: PIN ASSIGNMENT: Feedback Drain Source + - Gnd/Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10 Frequency [Hz] 100 1 10 Frequency [Hz] 100 1/2 Noise [µV/Hz ]


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    PDF LIE-200-# 100nF OPA227, OP1177 lie-200 InfraTec "Pyroelectric Detector" pyroelectric detector

    thermopile

    Abstract: roithner OTC-239 OTC-239-A microwave oven Thermistor lasertechnik 4344 vienna
    Text: OTC-239 THERMOPILE INFRARED SENSOR ▓ Features The thermopile sensor consists of a series of 44 thermoelements, forming a sensitive area of 0.5 x 0.5 mm2. The sensor is hermetically sealed into a TO18 metal housing, with optical filter. This standard filter allows measurements


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    PDF OTC-239 thermopile roithner OTC-239 OTC-239-A microwave oven Thermistor lasertechnik 4344 vienna

    BPW97

    Abstract: No abstract text available
    Text: TELEFUNKEN Semiconductors BPW 97 Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve


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    PDF BPW97 D-74025

    6550

    Abstract: CCD barcode diode product list 650 DIODE 6350-1271-AU 7212 transistor barcode MS7 package 6550-7241-BA 1310led
    Text: 迪伸電子股份有限公司 LECC TECHNOLOGY CO., LTD. Address:11F-3, NO.959, YUNG FU RD, CHUNGLI CITY, 320 TAIWAN, R.O.C. Tel:+886-3-4358767 Fax:+886-3-4558416 MP:+886-936111616 E-Mail:neiltung@ms7.hinet.net http://www.lecc.com.tw under construction LASER DIODE PRODUCT LIST


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    PDF 11F-3, 1310-50-BA 1310-LED-155 850-TX PIN-TIA-155-3 PIN-TIA-155-5V 6350-1271-AU 6350-1271-AU-50 6551-7212-EV 6750-7241-EV 6550 CCD barcode diode product list 650 DIODE 6350-1271-AU 7212 transistor barcode MS7 package 6550-7241-BA 1310led

    HLDH-808-B-200-01

    Abstract: HLDH-780-A-90-01 HLDH-650-A1001 HLDP-635-A-5-01 HLDH-650-A-10-01 HLDP-650-A-5-01 laser diode TO-18 package hldh HLDH-808-B20001 HLDP-635-a-5
    Text: Laser Products o Laser Diode Device No Ta=25 C Operating Output Operating Monitor Laser temperature power current Topr Po Iop Im lp q// / q^ mW mA mA nm deg current wavelength divergence Package o 2.0 LD facet 1.27 5.6 4.4 3.35 Window o 1.6 Beam 1 3 2 0.3


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    PDF HLDD-650-A-7-01 HLDD-650-A-7-01 HLDP-635-A-5-01 HLDP-650-A-5-01 HLDP-650-A-5-02 HLDH-808-B-200-01 HLDH-780-A-90-02 HLDH-780-A-90-02: HLDH-808-A-200-02: HLDH-808-B-200-02 HLDH-808-B-200-01 HLDH-780-A-90-01 HLDH-650-A1001 HLDP-635-A-5-01 HLDH-650-A-10-01 HLDP-650-A-5-01 laser diode TO-18 package hldh HLDH-808-B20001 HLDP-635-a-5

    HLDP-635-a-5

    Abstract: HLDP-650-A-5-01 HLDD-650-A-7-01 HLDH-660-A5001 HLDH-650-A-10-01 HLDH-650-A1001 HLDH-808-B20001 HLDH-660-A-20-01 HLDH-660-A2001 HLDH-808-B-200-01
    Text: Laser Products o Laser Diode Device No Ta=25 C Operating Output Operating Monitor Laser Beam temperature power current Topr Po Iop Im lp q// / q^ ℃ mW mA mA nm deg current wavelength divergence Package o 2.0 LD facet 1.27 5.6 4.4 3.35 Window o 1.6 1 3 2


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    PDF HLDD-650-A-7-01 HLDD-650-A-7-01 HLDP-635-A-5-01 HLDP-650-A-5-01 HLDP-650-A-5-02 HLDH-808-B-200-01 HLDH-808-B-200-02 HLDH-780-A-90-02: HLDH-808-A-200-02: HLDH-808-B-500-01 HLDP-635-a-5 HLDP-650-A-5-01 HLDH-660-A5001 HLDH-650-A-10-01 HLDH-650-A1001 HLDH-808-B20001 HLDH-660-A-20-01 HLDH-660-A2001 HLDH-808-B-200-01

    C30817E

    Abstract: C30955EH
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and


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    PDF C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH

    Untitled

    Abstract: No abstract text available
    Text: Pulsed Laser Diodes and Infrared LEDs IREDs HIGH POWER Pulsed Laser Diodes PGA – PGEW Series LASER DIODES for Range Finding Pulsed Laser Diodes – PGA – PGEW Series Applications • Range finders • Safety light curtains • Adaptive cruise control


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    PDF O-18-â

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


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    PDF RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI

    TO8 socket

    Abstract: C8366 S3071 S3399 S3883 S5821 S5971 S5972 S5973 Photodiode, TO-5,
    Text: MODULE Photosensor amplifier C8366 Current-to-voltage conversion amplifier for high-speed Si PIN photodiode Features Applications l Wide band l High-speed photometry DC to 100 MHz Typ. at -3 dB; varied by the photodiode used l Laser monitors l Easy photodiode connection


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    PDF C8366 SE-171 KACC1067E02 TO8 socket C8366 S3071 S3399 S3883 S5821 S5971 S5972 S5973 Photodiode, TO-5,

    TO8 socket

    Abstract: No abstract text available
    Text: MODULE Photosensor amplifier C8366 Current-to-voltage conversion amplifier for high-speed Si PIN photodiode Features Applications l Wide band l High-speed photometry DC to 100 MHz Typ. at -3 dB; varied by the photodiode used l Laser monitors l Easy photodiode connection


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    PDF C8366 SE-171 KACC1067E02 TO8 socket

    TO-8 SOCKET

    Abstract: S5973 TO8 socket C8366 hirose HR10 HR10-7P-4S Photodiode photodiode amplifier 4-Pin HIROSE S3071
    Text: MODULE Photosensor amplifier C8366 Current-to-voltage conversion amplifier for high-speed Si PIN photodiode Features Applications l Wide band l High-speed photometry DC to 100 MHz Typ. at -3 dB; varied by the photodiode used l Laser monitors l Easy photodiode connection


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    PDF C8366 SE-171 KACC1067E03 TO-8 SOCKET S5973 TO8 socket C8366 hirose HR10 HR10-7P-4S Photodiode photodiode amplifier 4-Pin HIROSE S3071

    TO18 package

    Abstract: heatsink
    Text: LASER DIODES IN THE TO-18 PACKAGE • The package must be screwed down to a heatsink which can dissipate the heat generated by the laser. For best results, the heatsink should be made from a good heat conductor such as copper or aluminum. • The surface of the heatsink should be machined flat and smooth where it contacts the base


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Large Area InGaAs Avalanche Photodiodes for 1550 nm eye-safe laser range finding applications Overview The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency. Q.E. , high responsivity and low noise in the


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    PDF C30645 C30662 cus49) 0411-803P

    Photodiode laser detector BPX-65

    Abstract: BPX65 amplifier UDT Sensors avalanche photodiode bias InGaAs apd photodiode power amplifier optic fiber photodiode BPX65
    Text: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can


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    PDF 7/TO-18 Photodiode laser detector BPX-65 BPX65 amplifier UDT Sensors avalanche photodiode bias InGaAs apd photodiode power amplifier optic fiber photodiode BPX65

    B029A

    Abstract: UN039
    Text: Light Emittihg Diodes • Laser Modules ■ infrared Light Emitting Diodes incl. visible (for Fiber, Control) Applica­ tions Package If Type No. Vf max. AL typ. •L a s e r Module for Optical Communication Q tr.tl typ (ns) Type No. Package No. LN7301M005


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    PDF LN7301M005 122WS LN122WF LN184 LN189L LN9860/P/PR LN189M LN189S LN671 LN51L B029A UN039

    HLDH-650-A-10-01

    Abstract: HLDH-650-A1001 HLDH-808-B20001 HLDH-660-A2001 laser diode TO-18 package HLDH-808-B-200-01 HLDH-780-A-90-01 HLDH-660-A5001 HLDP-650-A-5-02 HLDH-660-A-20-01
    Text: Laser Products Laser Diode Ta=25°C Operating Device No Output Operating Monitor Laser Beam temperature power current current wavelength divergence Topr Po lop im Xp e//1 e± °C mW mA mA nm deg Package -W indow 0 1.6 02.0 - L D fa ce t 1.27 Zii t 0.3 2.3.


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    PDF HLDD-650-A-7-01 HLDP-635-A-5-01 HLDP-650-A-5-01 HLDP-650-A-5-02 HLDH-650-A-10-01 HLDP-780-A-3-01 HLDH-650-A1001 HLDH-808-B20001 HLDH-660-A2001 laser diode TO-18 package HLDH-808-B-200-01 HLDH-780-A-90-01 HLDH-660-A5001 HLDH-660-A-20-01