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    TO202 TRANSISTOR Search Results

    TO202 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TO202 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. Absolute Maximum Ratings:


    Original     		NTE296 NTE296 10MHz PDF

    NTE210

    Abstract: NTE211
    Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack­ age designed for general purpose, medium voltage, medium power amplifier and driver applications


    Original     		NTE210 NTE211 500mA, 20MHz NTE210 NTE211 PDF

    NTE49

    Abstract: NTE50
    Text: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.


    Original     		NTE49 NTE50 250mA, 100MHz, 100kHz NTE49 NTE50 PDF

    NTE269

    Abstract: TO202 package NTE268 SILICON COMPLEMENTARY transistors darlington 956b
    Text: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require-


    Original     		NTE268 NTE269 100MHz NTE269 TO202 package NTE268 SILICON COMPLEMENTARY transistors darlington 956b PDF

    npn general purpose high voltage amplifier

    Abstract: NTE49 NTE50
    Text: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.


    Original     		NTE49 NTE50 250mA, 100MHz, 100kHz npn general purpose high voltage amplifier NTE49 NTE50 PDF

    NTE171

    Abstract: No abstract text available
    Text: NTE171 Silicon NPN Transistor Audio/Video Amplifier Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.


    Original     		NTE171 NTE171 20MHz PDF

    pnp 300v

    Abstract: NTE296
    Text: NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. Absolute Maximum Ratings:


    Original     		NTE296 NTE296 10MHz pnp 300v PDF

    NTE211

    Abstract: NTE210
    Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications


    Original     		NTE210 NTE211 500mA, 20MHz NTE211 NTE210 PDF

    npn general purpose high voltage amplifier

    Abstract: NTE49 NTE50
    Text: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.


    Original     		NTE49 NTE50 250mA, 100MHz, 100kHz npn general purpose high voltage amplifier NTE49 NTE50 PDF

    NTE171

    Abstract: No abstract text available
    Text: NTE171 Silicon NPN Transistor Audio/Video Amplifier Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high−voltage TV video and chroma output circuits, high−voltage linear amplifiers, and high−voltage transistor regulators.


    Original     		NTE171 NTE171 20MHz PDF

    TO202N

    Abstract: NTE272 NTE273 ic 555 audio amplifiers
    Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.


    Original     		NTE272 NTE273 200mA 500mA NTE273 O202N TO202N NTE272 ic 555 audio amplifiers PDF

    Complementary Darlington Audio Power Amplifier

    Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555
    Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.


    Original     		NTE272 NTE273 200mA 500mA NTE273 O202N Complementary Darlington Audio Power Amplifier PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 application note ic 555 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.


    Original     		NTE272 NTE273 200mA 500mA NTE273 PDF

    NTE186

    Abstract: NTE187
    Text: NTE186 NPN & NTE187 (PNP) Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater


    Original     		NTE186 NTE187 100mA NTE186 NTE187 PDF

    darlington complementary power amplifier

    Abstract: PNP Relay Driver SILICON COMPLEMENTARY transistors darlington nte269 TO202 package NTE268 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS current amplifier note darlington
    Text: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.


    Original     		NTE268 NTE269 100MHz darlington complementary power amplifier PNP Relay Driver SILICON COMPLEMENTARY transistors darlington nte269 TO202 package NTE268 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS current amplifier note darlington PDF

    BF458

    Abstract: TO202 bf459 transistor TO-202 transistor NPN TO-202 bf469 or equivalent TO-202 transistor BF869 equivalent BF469 TO-202 PNP
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN HIGH-VOLTAGE POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. 45 typ. >45 BF419 TO-126 250 300 6000 BF457 TO-126


    Original     		BF419 O-126 BF457 BF458 BF459 BF469 BF458 TO202 bf459 transistor TO-202 transistor NPN TO-202 bf469 or equivalent TO-202 transistor BF869 equivalent BF469 TO-202 PNP PDF

    D43C8

    Abstract: nsd6181 NSDU51
    Text: NATL SEflICOND DISCRETE E2E D • bS D113Q 0037767 5 ■ T-27-0/ PNP Medium Power Transistors by Ascending Vce0 Part No. Max (m A /V) Vce (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237 TO-237


    OCR Scan     		D113Q T-27-0/ 2N6726 92PU51 D41D1 D41D2 NSDU51 TN5023 2N4234 2N6727 D43C8 nsd6181 PDF

    BF759

    Abstract: BF858 TO202
    Text: TO-202 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. PD ^CBO ^CEO ^ EBO (V) Min (V) Min (V) Min BD839 45 45 5 2 BD841 60 60 5 BDB43 100 80 BF759 350 350 (W) Ta=25 "C ¡CBO (A) (MA)


    OCR Scan     		O-202 O-202 BD839 BD841 CSC1212A CSC1212B CSC1212C BF759 BF858 TO202 PDF

    2N6591

    Abstract: No abstract text available
    Text: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120


    OCR Scan     		bSG1130 G0377 NSE181 PN3568 TN2017 TN2102 2N5321 D40D10 D40D11 D40D13 2N6591 PDF

    NSD102

    Abstract: D42C5 040e5 NSE180 2N4945 NSE871 d42c2 TO-202 transistor NPN NSDU05 2N6714
    Text: NATL SEMICOND DISCRETE 5SE D • bSG1130 Ci a377a4 T ■ T-27-0! NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc /V ce Vceo (V) NSE871 TN1711 ’ Vce (sat) (V) Ic/lb M ax (mA)/(mA) Min M ax (m A/V) 50 40 300 25/20 500/10 1.5 150 Package


    OCR Scan     		bSG1130 Cia377a4 T-21-0! NSE871 TN1711 O-202 O-237 MPS6561 MSP6560 2N5449 NSD102 D42C5 040e5 NSE180 2N4945 d42c2 TO-202 transistor NPN NSDU05 2N6714 PDF

    bd817

    Abstract: B0815 B0817 2SC2068 2SC2068R 2SC2068Y BF858 BF859 CSC2611 CSC2621
    Text: TO-202 PLASTIC PACKAGE TRANSISTORS NPN No. 2SC2068 'C BO V CBO V ECO V EBO (V) (V) (V) (PA) Min Mir Min Max 300 300 5.0 1.0 « vCB hFE 300 300 5.0 1.0 Min 240 240 300 300 5.0 1.0 240 2SC2068Y 300 300 5.0 1.0 240 BF859 300 300 5.0 0.1 CSC2611 300 300 5.0


    OCR Scan     		O-202 2SC2068 2SC20680 2SC2068R 2SC2068Y BF859 bd817 B0815 B0817 BF858 CSC2611 CSC2621 PDF

    NSD134

    Abstract: NSD459 NSD458 NSD133 NSE459 TO-202 D40N2 2N3440 nse458 2N6712
    Text: NATL SEMICOND DISCRETE 52E D • T Z‘ 2~7~0/ bSG113Q 0D377flb 3 ■ NPN Medium Power Transistors by Ascending Vceo (continued) Part No. Vceo (V) Min Hfe @ lc/Vce Max ' (mA/V) Vce (sat) (V) Max lc/lb Package (mA)/(mA) PN7055 220 40 10/20 1.0 20 TO-92 D40P5


    OCR Scan     		bSQ113G 0G377flb PN7055 D40P5 O-202 2N3440 2N6593 2N6712 O-237 NSD134 NSD459 NSD458 NSD133 NSE459 TO-202 D40N2 nse458 PDF

    2A 5A10

    Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
    Text: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25


    OCR Scan     		bSG113Q GQ377aS NSE181 PN3568 TN2017 O-202 O-237 TN2102 2N5321 2A 5A10 NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 D40D10 D40D11 D40D13 PDF

    NSDU51

    Abstract: D43C8 NSD6181 0410 2N4234 2N6726 2N6727 92PU51 92PU51A D41D1
    Text: NATL SEMICOND DISCRETE S5E D • bSG113Q 0G377fl7 5 ■ T '21-0t PNP Medium Power Transistors by Ascending Vceo Part No. Vceo \»l Max (mA/V) V « (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237


    OCR Scan     		0G377fl7 T-21-0t 2N6726 O-237 92PU51 D41D1 O-202 D41D2 NSDU51 D43C8 NSD6181 0410 2N4234 2N6727 92PU51A PDF