Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO220 600V Search Results

    TO220 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LMZM23600V5SILR Texas Instruments 36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 Visit Texas Instruments Buy
    LMZM23600V3SILT Texas Instruments 36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 Visit Texas Instruments Buy
    LMZM23600V3SILR Texas Instruments 36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 Visit Texas Instruments Buy
    LMZM23600V5SILT Texas Instruments 36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 Visit Texas Instruments Buy
    TMCS1101A4UQDR Texas Instruments ±600V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125 Visit Texas Instruments

    TO220 600V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    nte6013

    Abstract: common cathode to220 600v common anode 600v package to220
    Text: NTE6013 Silicon Industrial Rectifier 600V, 12.7 Amp, TO220 Isolated Tab Description: The NTE6013 is a 12.7 Ampere 20A RMS silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features


    Original     		NTE6013 NTE6013 10sec) 2500VAC common cathode to220 600v common anode 600v package to220 PDF

    40TPS12

    Abstract: 12TTS12 equivalent of 16tts12 25tts12 25tts12 equivalent 40tps16 40tps08 12ARMS 30TPS12 16TTS08
    Text: SAFEIR Series 8 to 55A RMS , 800-1600V Thyristors in D-Pak, D 2 Pak, TO-220 & TO-247 IF (RMS) 8ARMS 12ARMS 16ARMS 25ARMS 12ARMS 16ARMS 25ARMS 16ARMS 25ARMS 30ARMS 55ARMS TO-247 TO-247 Package Style Voltage Grade 600V D2Pak D-Pak 8TWS06S TO220 TO220 Full Pak


    Original     		00-1600V O-220 O-247 12ARMS 16ARMS 25ARMS 40TPS12 12TTS12 equivalent of 16tts12 25tts12 25tts12 equivalent 40tps16 40tps08 12ARMS 30TPS12 16TTS08 PDF

    NTE54003

    Abstract: NTE54004 NTE54002 SCR TRIGGER PULSE circuit NTE5400 NTE54000 NTE54001 SCR TEST
    Text: NTE54000 thru NTE54004 Silicon Controlled Rectifier SCR 55 Amp, TO220 Description: The NTE54000 thru NTE54004 are half−wave, unidirectional, gate−controlled silicon controlled rectifiers (SCR) packaged in a TO220 type case featuring glass−passivated junctions to ensure long−


    Original     		NTE54000 NTE54004 NTE54004 NTE54000 NTE54001 150mA, 200mA -30A/s NTE54003 NTE54002 SCR TRIGGER PULSE circuit NTE5400 NTE54001 SCR TEST PDF

    NTE5438

    Abstract: NTE5437
    Text: NTE5437 & NTE5438 Silicon Controlled Rectifier SCR 8 Amp Senstitive Gate, TO220 Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required.


    Original     		NTE5437 NTE5438 NTE5437 NTE5438 PDF

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331 PDF

    04n60c3

    Abstract: Q67040-S4366
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 Q67040-S4366 PDF

    03N60C3

    Abstract: SMD Transistor g20 SPP03N60C3 SPA03N60C3 SPB03N60C3
    Text: SPP03N60C3, SPB03N60C3 SPA03N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 03N60C3 SMD Transistor g20 SPP03N60C3 SPA03N60C3 SPB03N60C3 PDF

    15N60C3

    Abstract: TRANSISTOR 15n60c3 SP000216325 SPP15N60C3 Q67040-S4600 VDD480V Q67040-S4601
    Text: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		SPP15N60C3, SPI15N60C3 SPA15N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 PG-TO-220-3-31: SPP15N60C3 15N60C3 TRANSISTOR 15n60c3 SP000216325 Q67040-S4600 VDD480V Q67040-S4601 PDF

    SP000216312

    Abstract: 11N6
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 PG-TO-220-3-31: SPI11N60C3 SP000216312 11N6 PDF

    07n65c3

    Abstract: PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3 V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3 SPP07N65C3 07n65c3 PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A PDF

    smd diode marking G12

    Abstract: SPA07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12 PDF

    D06E60

    Abstract: IDB06E60 Q67040-S4481 marking diode 6a diode 400V 6A IDP06E60 Q67040-S4480 400v 3a low vf diode smd code 6a marking DI SMD
    Text: IDP06E60 IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.


    Original     		IDP06E60 IDB06E60 P-TO220-3 P-TO220-2-2. Q67040-S4480 D06E60 D06E60 IDB06E60 Q67040-S4481 marking diode 6a diode 400V 6A IDP06E60 Q67040-S4480 400v 3a low vf diode smd code 6a marking DI SMD PDF

    D09E60

    Abstract: Q67040-S4482 IDB09E60 IDP09E60 Q67040-S4483
    Text: IDP09E60 IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.


    Original     		IDP09E60 IDB09E60 P-TO220-3 P-TO220-2-2. Q67040-S4483 D09E60 D09E60 Q67040-S4482 IDB09E60 IDP09E60 Q67040-S4483 PDF

    07n65c3

    Abstract: to220 pcb footprint PG-TO-220-3 PG-TO220-3-31 SPA07N65C3 SPI07N65C3 SPP07N65C3
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3 07n65c3 to220 pcb footprint PG-TO-220-3 SPA07N65C3 SPI07N65C3 SPP07N65C3 PDF

    D15E60

    Abstract: IDP15E60 IDB15E60 Q67040-S4484 Q67040-S4485
    Text: IDP15E60 IDB15E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.


    Original     		IDP15E60 IDB15E60 P-TO220-3 P-TO220-2-2. Q67040-S4485 D15E60 D15E60 IDP15E60 IDB15E60 Q67040-S4484 Q67040-S4485 PDF

    d45e60

    Abstract: INFINEON D45E60 Q67040-S4375 IDP45E60 IDB45E60 Q67040-S4469
    Text: IDP45E60 IDB45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.


    Original     		IDP45E60 IDB45E60 P-TO220-3 P-TO220-2-2. Q67040-S4469 D45E60 d45e60 INFINEON D45E60 Q67040-S4375 IDP45E60 IDB45E60 Q67040-S4469 PDF

    D30E60

    Abstract: IDP30E60 IDB30E60 diode 30a 400v
    Text: IDP30E60 IDB30E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 30 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.


    Original     		IDP30E60 IDB30E60 P-TO220-3 P-TO220-2-2. Q67040-S4488 D30E60 D30E60 IDP30E60 IDB30E60 diode 30a 400v PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3 PDF

    11N65C3

    Abstract: 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3
    Text: SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 650 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 SPP11N65C3 Q67040-S4557 11N65C3 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3 PDF

    07N65C3

    Abstract: 07N65
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3 07N65C3 07N65 PDF

    D23E60

    Abstract: smd diode 46A IDB23E60 IDP23E60
    Text: IDP23E60 IDB23E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.


    Original     		IDP23E60 IDB23E60 P-TO220-3 P-TO220-2-2. Q67040-S4486 D23E60 D23E60 smd diode 46A IDB23E60 IDP23E60 PDF

    20N65C3

    Abstract: 20n65 SPP20N65C3 20N65C
    Text: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology V DS RDS on 650 V 0.19 Ω ID 20.7 A • Worldwide best R DS(on) in TO 220 • Ultra low gate charge PG-TO262-3 PG-TO220-3-31 PG-TO220-3-1


    Original     		SPP20N65C3, SPA20N65C3 SPI20N65C3 P-TO220-3-31 PG-TO262-3 PG-TO220-3-31 PG-TO220-3-1 SPP20N65C3 SPI20N65C3 20N65C3 20n65 20N65C PDF

    15N60C3

    Abstract: TRANSISTOR 15n60c3 SPI15N60C3 SPP15N60C3 15N60 PG-TO220-3 SPA15N60C3 SP000216325 VDD480V
    Text: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220-3 PG-TO262-3 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: SPP15N60C3 15N60C3 TRANSISTOR 15n60c3 SPI15N60C3 SPP15N60C3 15N60 PG-TO220-3 SPA15N60C3 SP000216325 VDD480V PDF

    to220 pcb footprint

    Abstract: 11n60c3 TRANSISTOR SMD MARKING CODE 7A SPA11N60C3 equivalent SPI11N60C3 TO220 HEATSINK DATASHEET to262 pcb footprint SP000216312 SMD TRANSISTOR MARKING code TC SPD06S60
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		SPP11N60C3 SPI11N60C3, SPA11N60C3 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: PG-TO220-3 to220 pcb footprint 11n60c3 TRANSISTOR SMD MARKING CODE 7A SPA11N60C3 equivalent SPI11N60C3 TO220 HEATSINK DATASHEET to262 pcb footprint SP000216312 SMD TRANSISTOR MARKING code TC SPD06S60 PDF