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    TO220AB Search Results

    TO220AB Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    HAF2014 Renesas Electronics Corporation Thermal Shut Down Functioned MOSFET, TO220AB, /Tube Visit Renesas Electronics Corporation
    HAF1001 Renesas Electronics Corporation Silicon P Channel MOS FET Series Power Switching, TO220AB, / Visit Renesas Electronics Corporation
    HAF2001 Renesas Electronics Corporation Silicon N Channel MOS FET Series Power Switching, TO220AB, / Visit Renesas Electronics Corporation
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    TO220AB Price and Stock

    Vishay Intertechnologies IRF730PBF

    MOSFETs TO220 400V 5.5A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IRF730PBF Tube 7,550 50
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    • 100 $0.669
    • 1000 $0.631
    • 10000 $0.618
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    Vishay Intertechnologies VS-16CTQ100-M3

    Schottky Diodes & Rectifiers 100V 2 x 8A IF C.A. TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-16CTQ100-M3 Tube 5,700 50
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    • 100 $0.96
    • 1000 $0.86
    • 10000 $0.83
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    Vishay Intertechnologies VS-48CTQ060-M3

    Schottky Diodes & Rectifiers 60V 2 x 20A IF C.A. TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-48CTQ060-M3 Tube 5,700 50
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    • 100 $0.89
    • 1000 $0.85
    • 10000 $0.8
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    Vishay Intertechnologies VS-40CTQ150-M3

    Schottky Diodes & Rectifiers 150V 2 x 20A IF C.A. TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-40CTQ150-M3 Tube 5,200 50
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    • 100 $1.25
    • 1000 $0.91
    • 10000 $0.83
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    Vishay Intertechnologies SUP53P06-20-E3

    MOSFETs 60V 53A 104.2W 19.5mohm @ 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SUP53P06-20-E3 Tube 4,700 50
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    • 100 $1.2
    • 1000 $1.12
    • 10000 $1.06
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    TO220AB Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TO-220AB Harris Semiconductor HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE Original PDF
    TO-220AB Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    TO220AB Unknown PACKAGE MECHANICAL DATA Original PDF
    TO-220AB NXP Semiconductors AN11172 - Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Original PDF
    TO-220AB Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET Original PDF
    TO220AB-10-UP STMicroelectronics TO220AB-10-UP - ASD & DISCRETES - TOURS Original PDF
    TO220AB-20-UP STMicroelectronics TO220AB-20-UP - ASD & DISCRETES - TOURS Original PDF
    TO220AB NOTCHS ON HEATSINK STMicroelectronics TO220AB-NOTCHS-ON-HEATSINK - ASD & DISCRETES - TOURS Original PDF
    TO-220AB Option E3044 Package Siemens Package Outlines Original PDF
    TO-220AB Option E3045 Package Siemens Package Outlines Original PDF
    TO-220AB Option E3046 Package Siemens Package Outlines Original PDF
    TO-220AB Package International Rectifier Case Outline and Dimensions Original PDF
    TO-220AB Package International Rectifier Case Outline and Dimensions & Part Marking Information Original PDF
    TO-220AB Package International Rectifier Case Outline and Dimensions Original PDF
    TO-220AB Package Intersil 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE Original PDF
    TO-220AB Package Intersil 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE Original PDF
    TO220AB Package Unknown PACKAGE MECHANICAL DATA Original PDF
    TO-220AB Package Siemens Package Outlines Original PDF
    TO220AB WIRE WITH NOTCHS STMicroelectronics TO220AB-WIRE-WITH NOTCHS - ASD & DISCRETES - TOURS Original PDF

    TO220AB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BTB04-600SAP

    Abstract: S0817MH S1217NH BTA12-700BW BTB04 600SAP BTB04-600SAP equivalent BTB06-700SW btb04600sap s1217mh BTA06-400GP
    Text: Thyristors 4-Quadrant Triacs - continued 4-Quadrant Triacs - continued Thyristors ST Microelectronics Cross Reference Guide Silicon Controlled Rectifiers SCRs - continued VDRM (V) IGT (mA) Package ST Part NXP Part 800 35/35/35/70 SOT78 / TO220AB Z0109NN


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    PDF O220AB Z0109NN Z0109SA BT131-800E Z0109NA Z0109SN BTB04-600SAP S0817MH S1217NH BTA12-700BW BTB04 600SAP BTB04-600SAP equivalent BTB06-700SW btb04600sap s1217mh BTA06-400GP

    S12M15-600B

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package


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    PDF S12M15-B O-220AB O220AB O-220AB S12M15-600B

    IRF820

    Abstract: irf-82
    Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()


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    PDF IRF820 IRF82 O220AB IRF820 irf-82

    BUJ105A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


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    PDF BUJ105A O220AB BUJ105A

    TRANSISTOR BUK9508

    Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


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    PDF O220AB OT404 BUK9508-55A BUK9608-55A O220AB TRANSISTOR BUK9508 BUK9508-55A BUK9608-55A transistor smd 412 BE

    BUJ202A

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


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    PDF BUJ202A O220AB BUJ202A

    GCF10A60

    Abstract: No abstract text available
    Text: FRD Type : GCF10A60 OUTLINE DRAWING FEATURES * Similar to TO220AB Case * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g


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    PDF GCF10A60 O220AB GCF10A60

    BUK95180-100A

    Abstract: BUK96180-100A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


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    PDF O220AB OT404 BUK95180-100A BUK96180-100A O220AB OT40otation BUK95180-100A BUK96180-100A

    BUK9535-55A

    Abstract: transistor smd 26 BUK953555A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


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    PDF O220AB OT404 BUK9535-55A BUK9635-55A O220AB BUK9535-55A transistor smd 26 BUK953555A

    Untitled

    Abstract: No abstract text available
    Text: FRD Type : GCF10A20 OUTLINE DRAWING FEATURES * Similar to TO220AB Case * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g


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    PDF GCF10A20 O220AB GCF10A20

    GCF10A40

    Abstract: No abstract text available
    Text: FRD Type : GCF10A40 OUTLINE DRAWING FEATURES * Similar to TO220AB Case * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g


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    PDF GCF10A40 O220AB GCF10A40

    PHE13009

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high


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    PDF PHE13009 PHE13009 O220AB

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


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    PDF BUJ303B BUJ303B O220AB

    GCF06A40

    Abstract: No abstract text available
    Text: FRD Type : GCF06A40 OUTLINE DRAWING FEATURES * Similar to TO220AB Case * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g


    Original
    PDF GCF06A40 O220AB GCF06A40

    BUJ303B

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


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    PDF BUJ303B O220AB BUJ303B

    SMBJ11CA

    Abstract: SMBJ15A 13/Altium SBR10200CT SBL2035CT SBR30A50CT SMBJ130A SMBJ130CA SMBJ17A SMBJ14CA
    Text: DATE: 11th March, 2011 PCN #: 2034 REV 01 on 4th August, 2011 PCN Title: Qualification of Additional Assembly and Test Site for Select SMA, SMB, SMC, and TO220AB Packaged Devices


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    PDF O220AB R20U40CT SBR20U60CT SBR20U100CT SBR20U150CT SBR3040CT SBR3045CT SBR3045SCT SBR3060CT SBR30100CT SMBJ11CA SMBJ15A 13/Altium SBR10200CT SBL2035CT SBR30A50CT SMBJ130A SMBJ130CA SMBJ17A SMBJ14CA

    AN7254

    Abstract: AN7260 RFP2N12 RFP2N15 TB334
    Text: [ /Title RFP2N 12, RFP2N1 5 /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm,


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    PDF O220AB) RFP2N12, RFP2N15 AN7254 AN7260 RFP2N12 RFP2N15 TB334

    Untitled

    Abstract: No abstract text available
    Text: SCTMU001F Data Sheet N-channel SiC power MOSFET lOutline VDSS 400V RDS on (Typ.) 120mW ID 20A PD 132W TO220AB (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel


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    PDF SCTMU001F 120mW O220AB R1102B

    IRF54

    Abstract: IRF540 RF1S540SM RF1S540SM9A Applications Note of IRF540 RF1S540 T1 IRF540 IRF540 application IRF540 MOSFET datasheet irf540 pdf switch
    Text: [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB ) /Creator () /DOCI IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU


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    PDF IRF54 O220AB O263AB IRF540 IRF54 IRF540 RF1S540SM RF1S540SM9A Applications Note of IRF540 RF1S540 T1 IRF540 IRF540 application IRF540 MOSFET datasheet irf540 pdf switch

    IRF530 mosfet

    Abstract: TA17411 IRF530 TB334 irf530g
    Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power


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    PDF IRF53 O220AB O263AB IRF530 IRF530 mosfet TA17411 IRF530 TB334 irf530g

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package


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    PDF S12M15-B O-220AB O220AB O-220AB 40rent

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 800 VOLTS Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES B Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package


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    PDF S12M15-B O-220AB O220AB O-220AB

    BUT211

    Abstract: BUT21
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.


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    PDF BUT211 O220AB O220AB BUT211 BUT21

    T0252

    Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
    Text: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)


    OCR Scan
    PDF SMB60N03-10L SMP60N03-10L SMD30N03-30L SMU30N03-30L SUD30N03-30 SUD50N03-10 SUB75N05-06 SUP75N05-06 SUD45N05-20L SMD25N05-45L T0252 SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251