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    TO4 TRANSISTOR Search Results

    TO4 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO4 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor cross reference chart

    Abstract: BFP405F to4 88 TO4 45
    Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 4 8 B F P 4 05 F R F T r a n s i s t or a s L o w C o s t , L o w C u r r e n t 2.5 mA 3 to4 GHz UWB Tx Amplifier with 2.2 3.6 V Operation R F & P r o t e c ti o n D e v i c e s


    Original     		PDF BFP405F transistor cross reference chart to4 88 TO4 45

    MJ13001

    Abstract: MJ-13001
    Text: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 DTS401 -DTS403 DTS409-DTS411 DTS413 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS hmr Induttrr TV* <*««) y («SSi VCH> (vat) ICEH


    Original     		PDF DTS401 -DTS403 DTS409-DTS411 DTS413 MJ-13071 MJ-13080 MJ-13061 MJ-130BO MJ-13001 MJ13001 MJ-13001

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BUY71 ueaumniuiN • High Switching Speed • Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (M in) I APPLICATIONS


    Original     		PDF BUY71

    Pulse-Width-Modulation Control Circuit

    Abstract: MS-026 S-PQFP-G48 TL1464I
    Text: TL1464I QUAD PULSE-WIDTH-MODULATION CONTROL CIRCUIT SLVS266 – FEBRUARY 2000 D D D D D D D High-Speed Drive Controller for PNP Power Transistor Internal-Regulator Provides a Stable 1.5 V Reference Supply Low Start-Up Voltage 3.1 V Internal Short-Circuit Protection


    Original     		PDF TL1464I SLVS266 TL1464I Pulse-Width-Modulation Control Circuit MS-026 S-PQFP-G48

    Untitled

    Abstract: No abstract text available
    Text: TL1464I QUAD PULSE-WIDTH-MODULATION CONTROL CIRCUIT SLVS266 – FEBRUARY 2000 D D D D D D D High-Speed Drive Controller for PNP Power Transistor Internal-Regulator Provides a Stable 1.5 V Reference Supply Low Start-Up Voltage 3.1 V Internal Short-Circuit Protection


    Original     		PDF TL1464I SLVS266

    Untitled

    Abstract: No abstract text available
    Text: TL1464I QUAD PULSE-WIDTH-MODULATION CONTROL CIRCUIT SLVS266 – FEBRUARY 2000 D D D D D D D High-Speed Drive Controller for PNP Power Transistor Internal-Regulator Provides a Stable 1.5 V Reference Supply Low Start-Up Voltage 3.1 V Internal Short-Circuit Protection


    Original     		PDF TL1464I SLVS266

    2SC5093

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5093 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5093 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. • N F=1.8dB, |S2lel2= 9.5dB f=2GHz 1.25 ± 0.1 to4 1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5093 2SC5093

    17F-1

    Abstract: No abstract text available
    Text: P hilips Sem iconductors Product specification Optocouplers CNY17-1 to 4/CNY17F-1 to 4 APPROVALS FEATURES • Fast switching STANDARD • Low saturation voltage UL note 1 • High maximum output voltage VDE (note 1) approved in accordance with VDE 0883/6.80


    OCR Scan     		PDF CNY17-1 4/CNY17F-1 0110b 57804/VDE 86/HD E90700 CNY17 to4/CNY17F-1 17F-1

    KTB1469

    Abstract: KTD2161 YS 150 003 b YS 150 003
    Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD2161 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION A R S 1 FEATURES P CSC


    OCR Scan     		PDF KTD2161 100MHz KTB1469. KTB1469 KTD2161 YS 150 003 b YS 150 003

    V121

    Abstract: KTC3197
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3197 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • High Gain : Gpe=33dB Typ. (f=45MHz). • Good Linearity of h MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KTC3197 45MHz) Ta-25Â 45MHz 58MHz V121 KTC3197

    BUR50

    Abstract: Jedec TO-3 metal case
    Text: r z 7 S C S -T H O M S O N ^ 7 # M M S iL I O T O K S BUR50 BU R 5 0 S HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTION The BUR50 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, the BU R50S is the same type in Jedec TO-3 metal case,


    OCR Scan     		PDF BUR50 BUR50-BUR50S Jedec TO-3 metal case

    GD4007UB

    Abstract: No abstract text available
    Text: GOLDSTAR 4028757 TECHNOLOGY GOLDSTAR TECHNOLOGY INCi INC. DM e 04E D I 4Dsa?s? aoniLia a 01619 D T-H3 -Z5 GD4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER DESCRIPTION - The 4007UB is a Dual Complementary Pair and an Inverter w ith access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. For proper


    OCR Scan     		PDF GD4007UB 4007UB GD4007UB

    2SC2527

    Abstract: fujitsu DC-DC a1077 NPN transistor 2527
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC2527 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T


    OCR Scan     		PDF 2SC2527 10MHz 2SC2527 fujitsu DC-DC a1077 NPN transistor 2527

    2SC5324

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1 CHARACTERISTIC


    OCR Scan     		PDF 2SC5324 2SC5324

    TIP34

    Abstract: TO3A TIP33 TIP33A TIP33B TIP33C TIP34A TIP34B TIP34C
    Text: PANASONIC INDL/ELEK -CIO t^ a a fls a 1EE D Silicon PNP Power Transistors 0010431 3 -3 3 '2 I t TOP-3 Package Absolute Maximum Ratings Ta=25°C tteni Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current


    OCR Scan     		PDF TIP34 TIP34A TIP34B TIP34C TIP33, TIP33A, TIP33B, TIP33C 500mA ltl-25 TO3A TIP33 TIP33A TIP33B TIP33C

    SOT-90B

    Abstract: CNY17-1 17F-2 17-F1 Y17F CNY17 CNY17F CNY17F-1 17F-3 17-F4
    Text: P h ilip s Sem icon du ctor« P rodu ct specification Optocouplers CNY17-1 to 4/CNY17F-1 to 4 APPRO VALS FEATURES • Fast switching S TA N D A R D • Low saturation voltage UL note 1 • High maximum output voltage VDE (note 1) approved in accordance with V D E 0883/6.80


    OCR Scan     		PDF CNY17-1 Y17F-1 CNY17F OT90B CNY17F-1 CNY17 bbS3R31 4/CNY17F-1 SOT-90B 17F-2 17-F1 Y17F 17F-3 17-F4

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification 7- H t - r j Optocouplers ÛUA L IT Y T E C H N O L O G I E S CNY17-1 to 4/CNY17F-1 to 4 CORP S7E D 74bbasi OOQMblM • Fast switching STANDARD REFERENCE • Low saturation voltage UL note 1 • High maximum output voltage


    OCR Scan     		PDF CNY17-1 4/CNY17F-1 74bbasi 0110b 57804/VDE 86/HD OT212. SA048-2

    Westinghouse diode

    Abstract: Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324
    Text: 7294621 POWEREX INC T É? DE | 72T4L.21 0DQEHG7 5 | f Q A T-33-35 Single Darlington _ AmDeres TRANSISTOR í c n /i nnn 51i+o M odules Dim A B C D E F G H J K L N P Inches 3.740 Max 3.150 + .010 .90 M 5xM et 2.44 Max .59 .925 1.181 Max .83 .28 .236 .216 Dia 4


    OCR Scan     		PDF 72T4L T-33-35 S32452010 KS32452010 KS621K2010 Westinghouse diode Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324

    GCS9030

    Abstract: STD8N10L 066AA 100VDS
    Text: rz Z ^ 7/ S C S -T H O M S O N IKJDra IILIOT©raDSl STD8 N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss STD8N10L 100 V RDS on < 0.33 Id n % 8A • . . . . . . . TYPICAL R[)S(on) = 0.25 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STD8N10L STD8N10L O-251) O-252) 0068771-E 07ab3^ O-252 0068772-B 0072b3S GCS9030 066AA 100VDS

    Untitled

    Abstract: No abstract text available
    Text: E2C0010-27 -Y4 O K I Semiconductor Previous version: Jul. 1996 M SC1163 ~ 40-Bit Anode Driver GENERAL DESCRIPTION The MSC1163 is a monolithic IC using the Bi-CMOS process for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register and latch is


    OCR Scan     		PDF E2C0010-27 SC1163 40-Bit MSC1163 60-pin MSC1163

    IRFJ230

    Abstract: irf 539 IRF 543 MOSFET IRFJ231 IRFJ232 IRFJ233 T-39 T066 g-544 gogts
    Text: H E 0 | 405 5452 IN T E R N A T IO N A L OOGTSba b | Data Sheet No. PD-9.404A R E C T IF IE R INTERNATIONAL RECTIFIER IO R T-39-11 IRFJ230 HEXFET TRANSISTORS IRFJS3Ì N-CHANNEL POWER MDSFETs IRFJ23S IRFJ233 Features: 200 Volt, 0.4 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		PDF T-39-11 G-543 1RFJ230. IRFJ231. 1RFJ232, IRFJ233 75BVOSS G-544 IRFJ230 irf 539 IRF 543 MOSFET IRFJ231 IRFJ232 T-39 T066 gogts

    optocoupler a 3131

    Abstract: optocoupler 3131 optocoupler LP 250 3131 optocoupler MCT26 314 optocoupler L002 optocoupler 450 rfu20
    Text: J\_ MCT26 T O OPTOCOUPLER Optocoupler in a Dl L plastic envelope. The MCT26 comprises an infrared GaAs diode and a npn silicon phototransistor. UL — Covered under UL component recognition FILE E 90700 VDE — Approved according to VDE 0883/6.80 Reference voltage VDE 0110b Tab 4 : AC 380 V/DC 450 V - isolation group C


    OCR Scan     		PDF MCT26 MCT26 0110b 804/VDE 86/HD DD3S530 optocoupler a 3131 optocoupler 3131 optocoupler LP 250 3131 optocoupler 314 optocoupler L002 optocoupler 450 rfu20

    CNY17G-3

    Abstract: CNY17G3
    Text: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with


    OCR Scan     		PDF CNY17G/CNY17GF E90700 BS415 BS7002 OT212. 74bbflSl 0DD4fl03 MSA048-2 CNY17G-3 CNY17G3

    CD40158

    Abstract: No abstract text available
    Text: 4302271 DD373til 2 • HAS 4ME D HARRIS SEMICOND SECTOR i l ! H A R R IS CD4015B Types CMOS Dual 4-Stage Static Shift Register With Serial Input/Parallel Output High-Voltage Types 20-Volt Rating * Medium speed op eration.


    OCR Scan     		PDF DD373til 20-Volt 2CWH01 CD40158