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    TO52 PACKAGE Search Results

    TO52 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
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    TO52 PACKAGE Price and Stock

    TE Connectivity QP1-6 TO (TO52 PACKAGE)

    Board Mount Pressure Sensors QP1-6 TO (TO52 PACKAGE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI QP1-6 TO (TO52 PACKAGE) Each 250
    • 1 -
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    • 100 -
    • 1000 $61.38
    • 10000 $61.38
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    TO52 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Avalanche photodiode APD

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance


    Original     		SSO-AD-500-TO52 Avalanche photodiode APD PDF

    Untitled

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		SSO-AD-500-TO52 50oltage PDF

    nir source

    Abstract: No abstract text available
    Text: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)


    Original     		SSO-AD-230 NIR-TO52-S1 nir source PDF

    UBR10000

    Abstract: nir source
    Text: SSO-AD-230 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 active area 1) 0,042 mm ∅ 230 µm


    Original     		SSO-AD-230 NIR-TO52 905nm 655nm UBR10000 nir source PDF

    nir source

    Abstract: No abstract text available
    Text: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance


    Original     		SSO-AD-230-TO52 nir source PDF

    apd 400- 700 nm

    Abstract: No abstract text available
    Text: SSO-AD-500 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 Active area 1) 0,196 mm ∅ 500 µm


    Original     		SSO-AD-500 NIR-TO52 apd 400- 700 nm PDF

    TO52

    Abstract: SSO-AD-230-TO52-S1
    Text: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		SSO-AD-230-TO52-S1 TO52 SSO-AD-230-TO52-S1 PDF

    nir source

    Abstract: apd 400- 700 nm
    Text: SSO-AD-500 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package TO52 S1 : 2 active area 1) 0,196 mm ∅ 500 µm


    Original     		SSO-AD-500 NIR-TO52-S1 nir source apd 400- 700 nm PDF

    Avalanche photodiode APD

    Abstract: No abstract text available
    Text: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR


    Original     		SSO-AD-230-TO52 Avalanche photodiode APD PDF

    TO52 package

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		SSO-AD-500-TO52-S1 TO52 package PDF

    NTE2988

    Abstract: No abstract text available
    Text: NTE2988 MOSFET N–Channel, Enhancement Mode High Speed Switch Description: The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers.


    Original     		NTE2988 NTE2988 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2988 MOSFET N–Channel, Enhancement Mode High Speed Switch Description: The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers.


    Original     		NTE2988 PDF

    Pacific Silicon Sensor

    Abstract: 25-5-TO52-S1
    Text: Pacific Silicon Sensor Series 5 Data Sheet Part Description PS0.25-5-TO52-S1 Order # 03-210 ACTIVE AREA: 0.25mm 2 0.50mm X 0.50mm Ø 2.54 PIN CIRCLE PIN 1 ANODE Ø0.46 3 PL Ø 5.40 Ø 3.00 Ø 4.70 119° VIEWING ANGLE 2.90 FRONTSIDE VIEW TSTG TOP Storage Temp


    Original     		25-5-TO52-S1 O-52-S1 D-12459 Pacific Silicon Sensor 25-5-TO52-S1 PDF

    AD800-11-TO52-S1

    Abstract: UV diode 200 nm TO52S1 avalanche photodiode bias
    Text: Pacific Silicon Sensor Series 11 Data Sheet Part Description AD800-11-TO52-S1 Order # 06-112 ACTIVE AREA: 0.50 mm 2 800 µm DIA Ø 2.54 PIN CIRCLE PIN 1 ANODE Ø0.46 3 PL Ø5.40 Ø3.90 64° VIEWING ANGLE FRONTSIDE VIEW PIN 4 CASE ±1 12.7 3 PL BACKSIDE VIEW


    Original     		AD800-11-TO52-S1 O-52-S1 D-12459 AD800-11-TO52-S1 UV diode 200 nm TO52S1 avalanche photodiode bias PDF

    PC1-2-TO52

    Abstract: No abstract text available
    Text: Pacific Silicon Sensor Series 2 Data Sheet Part Description PC1-2-TO52 Order # 03-185 PIN 1 CATHODE ACTIVE AREA: 1mm 2 1.13mm DIA Ø2.54 PIN CIRCLE 3.70 Ø0.46 2PL Ø5.40 Ø4.70 Ø3.90 65° VIEWING ANGLE 1.56 SQ 1.50 12.7 2PL PIN 2 ANODE/CASE ±1 FRONTSIDE VIEW


    Original     		PC1-2-TO52 D-12459 PC1-2-TO52 PDF

    555E

    Abstract: No abstract text available
    Text: Pacific Silicon Sensor Series 5 Data Sheet Part Description PC0.55-5e-TO52-S1 Order # 03-233 ACTIVE AREA: 0.55 mm 2 0.84mm DIA Ø 2.54 PIN CIRCLE PIN 1 ANODE Ø0.46 3 PL Ø 3.00 Ø 4.70 112° VIEWING ANGLE 2.90 FRONTSIDE VIEW BACKSIDE VIEW DESCRIPTION APPLICATIONS


    Original     		55-5e-TO52-S1 O-52-S1 D-12459 555E PDF

    TO52

    Abstract: OP 470 PL IR SENSOR
    Text: Pacific Silicon Sensor Series 7 Data Sheet Part Description PS0.25-7-TO52-S1 Order # 03-081 ACTIVE AREA: 0.25mm 2 0.50mm X 0.50mm Ø 2.54 PIN CIRCLE PIN 1 ANODE Ø0.46 3 PL Ø 3.00 Ø 4.70 119° VIEWING ANGLE 2.90 FRONTSIDE VIEW PIN 4 CASE ±1 12.7 3 PL


    Original     		25-7-TO52-S1 O-52-S1 D-12459 TO52 OP 470 PL IR SENSOR PDF

    "laser range finder"

    Abstract: Silicon apd construction of photo diode AD800-9-TO52-S1
    Text: Pacific Silicon Sensor Series 9 Data Sheet Part Description AD800-9-TO52-S1 Order # 06-026 ACTIVE AREA: 0.50 mm 2 800 µm DIA Ø 2.54 PIN CIRCLE PIN 1 CATHODE Ø0.46 3 PL Ø 3.00 Ø 4.70 101° VIEWING ANGLE 2.70 FRONTSIDE VIEW BACKSIDE VIEW DESCRIPTION APPLICATIONS


    Original     		AD800-9-TO52-S1 O-52-S1 D-12459 "laser range finder" Silicon apd construction of photo diode AD800-9-TO52-S1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pacific Silicon Sensor Series 5 Data Sheet Part Description PC0.55-5th-TO52-S1 Order # 03-281 ACTIVE AREA: 0.55 mm 2 0.84mm DIA Ø 2.54 PIN CIRCLE PIN 1 ANODE Ø0.46 3 PL Ø 3.00 Ø 4.70 112° VIEWING ANGLE 2.90 FRONTSIDE VIEW BACKSIDE VIEW DESCRIPTION APPLICATIONS


    Original     		55-5th-TO52-S1 O-52-S1 D-12459 PDF

    "laser range finder"

    Abstract: APD, laser, range, finder Silicon apd AD100-8-TO52-S1
    Text: Pacific Silicon Sensor Series 8 Data Sheet Part Description AD100-8-TO52-S1 Order # 06-035 ACTIVE AREA: 0.00785 mm 2 100 µm DIA Ø 2.54 PIN CIRCLE PIN 1 CATHODE Ø0.46 3 PL Ø 3.00 Ø 4.70 116° VIEWING ANGLE 2.70 FRONTSIDE VIEW PIN 4 CASE ±1 12.7 3 PL


    Original     		AD100-8-TO52-S1 O-52-S1 D-12459 "laser range finder" APD, laser, range, finder Silicon apd AD100-8-TO52-S1 PDF

    "laser range finder"

    Abstract: schematic photo sensor AD-230-9 LASER RANGE FINDER
    Text: Pacific Silicon Sensor Series 9 Data Sheet Part Description AD230-9-TO52-S1 Order # 06-013 ACTIVE AREA: 0.042 mm 2 230 µm DIA Ø 2.54 PIN CIRCLE PIN 1 CATHODE Ø0.46 3 PL Ø 5.40 Ø 3.00 Ø 4.70 113° VIEWING ANGLE 2.70 FRONTSIDE VIEW 0.042 mm High Speed, Low Noise Avalanche Photodiode


    Original     		AD230-9-TO52-S1 O-52-S1 D-12459 "laser range finder" schematic photo sensor AD-230-9 LASER RANGE FINDER PDF

    TO99-8

    Abstract: as336 AS385 0 123 100 001
    Text: WWMALPHA SEMICONDUCTOR PRECISION VOLTAGE REFERENCE Excellence in Analog Power Products SELECTION GUIDE Dcvice Output Voltage V Operating Current Temperature Coefficient Initial Accuracy Package Type AS 124 AS255 AS5010 AS8069 AS9491 AS589 AS04/05 AS REF-01


    OCR Scan     		AS255 AS5010 AS8069 AS9491 AS589 AS04/05 REF-01 REF-02 REF-03 REF-025 TO99-8 as336 AS385 0 123 100 001 PDF

    MP311

    Abstract: MP310 MP312A MP31C MP312 transistor 311 "micro power systems"
    Text: MP310/311/312A M NPN Dural Monolithic Silicon Nitrox Transistors Micro Power Systems FEATURES • • • High Gain: hFE > 150 @ 1 0 n A -1 m A VBE Matching: I V b e i - v b e 2 I = -4mV typ. High if. 250 MHz typ. @ 1 mA • TO-52 Metal Can Package /w ail able


    OCR Scan     		MP310/311/312A MP310/311/312A 250mW 500mW MP311 MP310 MP312A MP31C MP312 transistor 311 "micro power systems" PDF

    2N5057

    Abstract: JAN2N706A 2n5456
    Text: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (toff ) ns @ IQ 2N834 M AX mA @ *C MIN - M A X mA TC 25°C MHz pF Ta 25°C mA MIN M AX mW W Package Complement 0.25 @ 10 350 4.0 300 1.0 TO-18 2N2894A


    OCR Scan     		2N834 2N709 FT709 2N3010 2N709A 2N2475 2N3647 2N3510 2N3011 2N743 2N5057 JAN2N706A 2n5456 PDF