AAT3310
Abstract: regulator SOT-23 5 317 SO-8 317 6 pin sot23 TO-92M
Text: AAT3310 MicroPowerä ä Shunt Voltage Regulator Features The AAT3310 is a MicroPower shunt voltage regulator, ideal for battery powered applications where small size and low current are critical. This reference has an adjustable output voltage and a wide operating range of 15µA to 20mA.
|
Original
|
PDF
|
AAT3310
AAT3310
OT-23,
O-92M
regulator SOT-23 5
317 SO-8
317 6 pin sot23
TO-92M
|
diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
|
Original
|
PDF
|
ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
|
2SA116
Abstract: No abstract text available
Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
|
Original
|
PDF
|
2SA1160
2SA116
|
A1680
Abstract: 2SA1680 2SC4408
Text: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)
|
Original
|
PDF
|
2SA1680
2SC4408
O-92MOD
20070701-JA
A1680
2SA1680
2SC4408
|
C5122
Abstract: 2SC5122
Text: 2SC5122 東芝トランジスタ シリコンNPN三重拡散形 2SC5122 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • 飽和電圧が低い。 : VCE sat = 0.4 V (標準) (IC = 20 mA, IB = 0.5 mA) : VCEO = 400 V 絶対最大定格 (Ta = 25°C)
|
Original
|
PDF
|
2SC5122
O-92MOD
20070701-JA
C5122
2SC5122
|
c2705
Abstract: c2705 transistor 2sc2705 2SA1145 C2705 data
Text: 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145.
|
Original
|
PDF
|
2SC2705
2SA1145.
c2705
c2705 transistor
2sc2705
2SA1145
C2705 data
|
A1761
Abstract: 2SA1761 2SC4604
Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)
|
Original
|
PDF
|
2SA1761
2SC4604.
A1761
2SA1761
2SC4604
|
c2236 transistor
Abstract: transistor C2236 C2236 NPN Transistor C2236 c2236 transistor equivalent C2236 Y 2SC2236 2SA966
Text: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
|
Original
|
PDF
|
2SC2236
2SA966
O-92MOD
c2236 transistor
transistor C2236
C2236 NPN Transistor
C2236
c2236 transistor equivalent
C2236 Y
2SC2236
|
C2703
Abstract: 2SC2703
Text: 2SC2703 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2703 ○ 低周波電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 100~320 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧
|
Original
|
PDF
|
2SC2703
O-92MOD
20070701-JA
C2703
2SC2703
|
b1457
Abstract: B1457 transistor 2SB1457
Text: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)
|
Original
|
PDF
|
2SB1457
b1457
B1457 transistor
2SB1457
|
c2230a
Abstract: C2230 2SC2230 2SC2230 GR 2SC2230A
Text: 2SC2230,2SC2230A 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2230,2SC2230A ○ 高耐圧一般増幅用 ○ カラーテレビ B 級音声出力用 • 単位: mm 高耐圧です。: VCEO = 180 V (2SC2230A) 絶対最大定格 (Ta = 25°C)
|
Original
|
PDF
|
2SC2230
2SC2230A
2SC2230A)
2SC2230
O-92MOD
c2230a
C2230
2SC2230 GR
2SC2230A
|
transistor c4408
Abstract: c4408 c4408 transistor 2SA1680 2SC4408
Text: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW
|
Original
|
PDF
|
2SC4408
2SA1680
transistor c4408
c4408
c4408 transistor
2SA1680
2SC4408
|
TA78L008AP
Abstract: A78L05 A78L 78LXX
Text: Voltage Regulators 1C 3-Terminal Regulators 1 Function Type No. TA78DS05BP 5 TA78DS06BP 6 TA78DS08BP TA78DS09BP TA78DS10BP Low output current Low dropout 8 9 TA78DS12BP 12 TA78DS15BP 15 TA78DS05F 5 TA78DS06F 6 TA78DS08F Low output current 8 TA70DSO9F Low dropout
|
OCR Scan
|
PDF
|
TA78DS05BP
TA78DS06BP
TA78DS08BP
TA78DS09BP
TA78DS10BP
TA78DS12BP
TA78DS15BP
TA78DS05F
TA78DS06F
TA78DS08F
TA78L008AP
A78L05
A78L
78LXX
|
BENT LEAD transistor TO-92 Outline Dimensions
Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
Text: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N
|
OCR Scan
|
PDF
|
SC-59)
SC-61)
TE85L
TE85R
TE85N
SC-70)
BENT LEAD transistor TO-92 Outline Dimensions
2SC2712 equivalent
4TE12
diode ssc
J Fet marking 2 AW
2SC2873 equivalent
90105 toshiba
ultrasonic atomizing
SMD TRANSISTOR MARKING 5c
|
|
|
2SA1145
Abstract: No abstract text available
Text: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)
|
OCR Scan
|
PDF
|
2SA1145
2SC2705.
200MHz
O-92MOD
--10mA
--10mA,
--10mA
2SA1145
|
"MARKING TE" US6
Abstract: 2301 mini transistor
Text: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment
|
OCR Scan
|
PDF
|
TE12L.
TE12H.
"MARKING TE" US6
2301 mini transistor
|
2sa965
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
|
OCR Scan
|
PDF
|
2SA965
2SC2235.
--10mA,
--500mA,
-500m
100mA
2sa965
|
K2961
Abstract: No abstract text available
Text: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2 S K2 9 61 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION • Low Drain-Source ON Resistance
|
OCR Scan
|
PDF
|
2SK2961
75MAX.
100/i
K2961
|
2SC1627A
Abstract: No abstract text available
Text: 2SC1627A SILICON NPN EPITAXIAL TYPE PCT PROCESS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 W atts Amplifiers. M A X IM U M R ATING S (Ta = 25°C)
|
OCR Scan
|
PDF
|
2SC1627A
2SA817A.
O-92MOD
2SC1627A
|
transistor 1127
Abstract: transistor 2sk2961
Text: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 5.1 M AX. APPLICATION • • • • Low Drain-Source ON Resistance : RüS(ON) = 0.20 (Typ.)
|
OCR Scan
|
PDF
|
2SK2961
100//A
75MAX.
20kil)
100/is^
transistor 1127
transistor 2sk2961
|
2SA949
Abstract: No abstract text available
Text: TOSHIBA 2SA949 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA949 Unit in mm DRIVER STAGE AUDIO AM PLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. • • • 5 1 MAX. High Breakdown Voltage : V£Eo = —150V Low Output Capacitance : Cob = 5.0pF Max.
|
OCR Scan
|
PDF
|
2SA949
120MHz
51MAX.
O-92MOD
|
Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.
|
OCR Scan
|
PDF
|
2SA1761
2SC4604.
O-92MOD
100mA
--75mA
--10V,
|
2SC2703
Abstract: No abstract text available
Text: 2SC2703 SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO POW ER AMPLIFIER APPLICATIONS. • U n it in m m H ig h DC C u rre n t G ain : h p E = 1 00~ 320 M A X IM U M RATINGS (T a = 2 5 °C ) C H A RA CTERISTIC SYM BOL RATING U N IT C ollector-B ase V oltage
|
OCR Scan
|
PDF
|
2SC2703
O-92M
2SC2703
|
Untitled
Abstract: No abstract text available
Text: 2 S A 1811 SILICON PNP EPITAXIAL TYPE Unit in mm LO W FREQ U EN CY AM PLIFIER APPLICATIO N S. DRIVER STA G E A M PLIFIER A PPLICA TIO N S. 5.1 MAX SW ITCHING A PPLICA TIO N S. • • Excellent hpE Linearity : hFE 2 = 35 (M in.), (V c e =:-2 V , I c = —300mA)
|
OCR Scan
|
PDF
|
2SA1811
--300mA)
2SC4707
O-92MOD
|