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    2SA1761 Price and Stock

    Toshiba America Electronic Components 2SA1761,F(J

    TRANS PNP 50V 3A TO92MOD
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    Toshiba America Electronic Components 2SA1761,T6F(J

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    Toshiba America Electronic Components 2SA1761,T6F(M

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    Toshiba America Electronic Components 2SA1761(F)

    Trans GP BJT PNP 50V 3A 3-Pin TO-92 Mod
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    2SA1761 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1761 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC4604 Original PDF
    2SA1761 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1761 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1761 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1761 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1761 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1761 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF
    2SA1761 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE Scan PDF
    2SA1761,F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 50V TO226-3 Original PDF
    2SA1761,T6F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 50V TO226-3 Original PDF
    2SA1761,T6F(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 50V TO226-3 Original PDF

    2SA1761 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1761

    Abstract: 2SA1761 2SC4604
    Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)


    Original     		PDF 2SA1761 2SC4604. A1761 2SA1761 2SC4604

    A1761

    Abstract: 2SA1761 2SC4604
    Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)


    Original     		PDF 2SA1761 2SC4604. A1761 2SA1761 2SC4604

    A1761

    Abstract: No abstract text available
    Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 0.2 µs (typ.)


    Original     		PDF 2SA1761 2SC4604. O-92MOD A1761

    A1761

    Abstract: 2SA1761 2SC4604
    Text: 2SA1761 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1761 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −0.5 A)


    Original     		PDF 2SA1761 2SC4604 O-92MOD 20070701-JA A1761 2SA1761 2SC4604

    A1761

    Abstract: 2SA1761 2SC4604
    Text: 2SA1761 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1761 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −0.5 A)


    Original     		PDF 2SA1761 2SC4604 O-92MOD A1761 2SA1761 2SC4604

    A1761

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1761 2SC4604
    Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 0.2 µs (typ.)


    Original     		PDF 2SA1761 2SC4604. A1761 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1761 2SC4604

    Untitled

    Abstract: No abstract text available
    Text: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 0.2 µs (typ.)


    Original     		PDF 2SA1761 2SC4604.

    c4604

    Abstract: 2SC4604 2SA1761
    Text: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4604 2SA1761 c4604 2SC4604 2SA1761

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    Untitled

    Abstract: No abstract text available
    Text: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4604 2SA1761

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    A1761

    Abstract: 2SA1761 2SC4604
    Text: TO SH IBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE Unit in mm 5.1 MAX Low Colleetor-Emitter Saturation Voltage : VCE sat “ —0.5V (Max.) (Ic = -1.5A ) High Speed Switching Time : ^ ^ = 0.2/^ (Typ.)


    OCR Scan     		PDF 2SA1761 2SC4604. O-92MOD A1761 2SA1761 2SC4604

    2SA1761

    Abstract: 2SC4604 A1761
    Text: TO SH IBA 2SA1761 2 S A 1 761 TO SHIBA TRANSISTOR PO W ER A M PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm 5.1 MAX. PO W ER SWITCHING APPLICATIONS • • • Low Colleetor-Emitter Saturation Voltage : VGE sat = -0.5V (Max.) (IC = - 1.5A) High Speed Switching Time : tg tg ^ .2 /^ (Typ.)


    OCR Scan     		PDF 2SA1761 2SC4604. O-92MOD 2SA1761 2SC4604 A1761

    2SA1301 TOSHIBA

    Abstract: b962 2SA1301 2SB1482 2SB1487 Toshiba 2SB754 2SA1467 2SB798 2SB897 2SA1213
    Text: 74 - w. € tt Manuf. T y p e No. 2SB 1507 2SB 1508 2 SB 1509 2SB 1510 2SB 1511 = W H # H £ = n h # 2SB 1512 O — A 2 SB 1513 □ — A 2 SB 1514 □— 2SB 1515 □ — A 2 SB 1516 2 SB 2 SB . H ^ SANYO 2SBS27 1527 2SB 1528 2 SB 1529 2SB1439 2SB1433 2SA1761


    OCR Scan     		PDF 2sb827 2sb754 2sa1185 2sb828 2sb1154 2sb829 2sbi155 2sb1214 2sb1418 2sb904 2SA1301 TOSHIBA b962 2SA1301 2SB1482 2SB1487 Toshiba 2SB754 2SA1467 2SB798 2SB897 2SA1213

    Untitled

    Abstract: No abstract text available
    Text: 2SC4604 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATION. Unit in mm 5.1 MAX POWER SWITCHING APPLICATIONS. . Low Collector-Emitter Saturation Voltage : VcE sat = 0.5V(max.) . High Speed Switching (Ic=1.5A) : tstg-0.5 u s (Typ.) 0 75 MAX 1.0 MAX . Complementary to 2SA1761


    OCR Scan     		PDF 2SC4604 2SA1761 100mA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1761 T O S H IB A T R A N SISTO R SILICO N PNP E P ITA X IA L TYPE 2 S A 1 761 Unit in mm P O W E R A M P L IFIE R A PPLIC A TIO N S . 5.1 MAX P O W E R S W IT C H IN G A PPLIC A TIO N S . • Low Collector-Emitter Saturation Voltage : v CE sat = -0 .5 V (Max.) (Ic = -1.5 A )


    OCR Scan     		PDF 2SA1761 2SC4604. 75MAX 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE Unit in mm PO W ER SWITCHING APPLICATIONS. • • • 5.1 MAX Low Collector-Emitter Saturation Voltage : VCE sat “ —0.5V (Max.) (IC = —1.5A) High Speed Switching Time : tgtg = 0.2//s(Typ.)


    OCR Scan     		PDF 2SA1761 2SC4604. O-92MOD 961001EAA2'

    A1761

    Abstract: 2SA1761 2SC4604
    Text: TOSHIBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE POWER SWITCHING APPLICATIONS. • Unit in mm 5.1 M A X Low Colleetor-Emitter Saturation Voltage • VCE sat “ —0.5V (Max.) (1^ = -1.5A) High Speed Switching Time : tgtg = 0.2y«s (Typ.)


    OCR Scan     		PDF 2SA1761 2SC4604. O-92MOD ----60V, -0i03 961001EAA2' A1761 2SA1761 2SC4604

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266