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    TO99 PACKAGE Search Results

    TO99 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO99 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D408 transistor

    Abstract: D408 TO99 package D408 equivalent d408 be D914 D508 transistor D508 D816 RMKD714
    Text: RMKD, RMKQ 48 Vishay Thin Film Hermetic, Dual-In-Line or TO Package Resistor Networks FEATURES • High Stability: < 300ppm Max., 2000 hrs., Pn + 70°C • Hermetic Cases: Dual-In-Line and TO99 TYPICAL PERFORMANCE THROUGH HOLE Actual Size ▲ The superstable RMK nickel-chromium integrated networks


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    300ppm 27-Apr-01 D408 transistor D408 TO99 package D408 equivalent d408 be D914 D508 transistor D508 D816 RMKD714 PDF

    r778

    Abstract: d408
    Text: RMKD Vishay Thin Film Hermetic, Dual-In-Line Resistor Networks FEATURES • High Stability: < 300ppm Max., 2000 hrs., Pn + 70°C • Hermetic Cases: Dual-In-Line and TO99 TYPICAL PERFORMANCE THROUGH HOLE Actual Size The superstable RMK nickel-chromium integrated networks


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    300ppm 14-May-02 r778 d408 PDF

    D408

    Abstract: D914
    Text: RMKD, RMKQ 48 Vishay Thin Film Hermetic, Dual-In-Line or TO Package Resistor Networks FEATURES • High Stability: < 300ppm Max., 2000 hrs., Pn + 70°C • Hermetic Cases: Dual-In-Line and TO99 TYPICAL PERFORMANCE THROUGH HOLE Actual Size ▲ The superstable RMK nickel-chromium integrated networks


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    300ppm 08-Apr-05 D408 D914 PDF

    d408

    Abstract: No abstract text available
    Text: RMKD, RMKQ 48 Vishay Thin Film Hermetic, Dual-In-Line or TO Package Resistor Networks FEATURES • High Stability: <300 ppm Max., 2000 hrs., Pn +70°C • Hermetic Cases: Dual-In-Line and TO99 Actual Size THROUGH HOLE TYPICAL PERFORMANCE ▲ The superstable RMK nickel-chromium integrated networks are available in


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    28-Jun-00 d408 PDF

    D408

    Abstract: D408 transistor D914 d408 be D408 equivalent D508 D816 RMKD714 RMKQ48 R51-13
    Text: P R E C I S I O N T H I N F I L M T E C H N O L O G Y Hermetic, Dual-In-Line or TO Package Resistor Networks Models RMKD and RMKQ 48 FEATURES • High Stability: <300 ppm Max., 2000 hrs., Pn +70°C • Hermetic Cases: Dual-In-Line and TO99 TYPICAL PERFORMANCE


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    m061

    Abstract: 2N2707 PA6015 m0702 2N4107 VC80 8VC80
    Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE M Ie Max (A) fT (Hz) Po Max (W) Mati. Description Package Style Complimentary Monolithic Pairs 5 10 15 20 25 30 35 40 8013580136 80137B0138 8013980140 8020180202 8020380204 8022680227


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    80137B0138 2N4079 2N4107 2N4136 2N531 2N532 2N533 m061 2N2707 PA6015 m0702 VC80 8VC80 PDF

    UPA68H

    Abstract: SD7000 MP310 BFY91 2c444 MPT02FH 2N3521 MPT02FH-52 md8002 PH0104-125
    Text: MATCHED PAIRS & COMPOSITES - Item Number Part Number Manufacturer V BR CEO Ie Max fT (V) (A) (H~ Po Max ~ Mati. Description Package Style NPN Monolithic Pairs, (Cont'd) 5 10 AD815 TMF5911 HD (A) TMF5911 HD/R (A) TMF5912HD (A) TMF5912HD/R (A) AD810 AD818 AD818


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    AD815 TMF5911 TMF5912HD TMF5912HD/R AD810 AD818 MP310 MP318 UPA68H SD7000 BFY91 2c444 MPT02FH 2N3521 MPT02FH-52 md8002 PH0104-125 PDF

    2N3609

    Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3


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    TP0102N3 TPOS02N3 TP0102N2 TP0602N2 2N3609 MFE823 2N4352 3N208 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet PDF

    UPA76ha

    Abstract: 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009
    Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ic Max (A) fT (Hz) PD Max (W) Mati. Description Package Style NPN Monolithic Pairs, (Co nt' d) 5 10 BFY83 BFY83 BFY83 2N3517 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 ~S~;:~A 15


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    BFY83 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009 PDF

    potentiometer 100k

    Abstract: OPA445 DAC80-CBI-I OPA445AP OPA445SM OPA445BM
    Text: OPA445 High Voltage FET-Input OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE POWER SUPPLY RANGE: ±10V to ±45V ● HIGH SLEW RATE: 10V/µs ● LOW INPUT BIAS CURRENT: 50pA max ● STANDARD-PINOUT TO-99 AND DIP PACKAGES ● TEST EQUIPMENT ● ●


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    OPA445 OPA445 0-20mA DAC80-CBI-I potentiometer 100k DAC80-CBI-I OPA445AP OPA445SM OPA445BM PDF

    G991

    Abstract: MX584TH/883B
    Text: SCOPE: PIN-PROGRAMMABLE PRECISION VOLT REFERENCE Device Type 01 02 Generic Number MX584S x /883B MX584T(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter H Q Mil-Std-1835 Case Outline Package Code


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    MX584S /883B MX584T /883B Mil-Std-1835 Mil-Std-883: Mil-Std-883. Mil-Std-883 MX584S/T/883B G991 MX584TH/883B PDF

    Untitled

    Abstract: No abstract text available
    Text: na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA MOS/FET/P-CHANNEL, ENHANCEMENT, SINGLE TYPE 3N163 3N164 3N172 3N173 UC1764 PACKAGE BVoss Volts Min. TO-72 TO-72 TO-72 TO-72 TO-72 —40 —30


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    3N163 3N164 3N172 3N173 UC1764 PDF

    opa445

    Abstract: AB-038 AB-039 OPA445AP OPA445AU OPA445BM DAC80-CBI-I opa4458
    Text: OPA445 OPA 445 OPA 445 High Voltage FET-Input OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE POWER SUPPLY RANGE: ±10V to ±45V ● HIGH SLEW RATE: 15V/µs ● LOW INPUT BIAS CURRENT: 10pA ● STANDARD-PINOUT TO-99, DIP, AND SURFACE MOUNT PACKAGES


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    OPA445 OPA445 AB-038 AB-039 OPA445AP OPA445AU OPA445BM DAC80-CBI-I opa4458 PDF

    TO99 package

    Abstract: 8-Lead TO-99 Package
    Text: a 8-Lead TO-99 Package TO-99 Dimensions shown in inches and (mm) 0.185 (4.70) 0.165 (4.19) 0.050 (1.27) MAX REFERENCE PLANE 0.750 (19.05) 0.500 (12.70) 0.250 (6.35) MIN 0.115 (2.92) BSC 0.160 (4.06) 0.110 (2.79) 5 6 4 0.335 (8.51) 0.305 (7.75) 0.230 (5.84)


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    l141

    Abstract: L141T2 l141 T1 709C L115T1 709a TO-99 L148T1 L141T1 MA702C
    Text: 36 44 L V ce o V 50 55 VcBO (V) i= i CD CTQ Q> q . a . • • 5 ' »O lr max (A) «—*• c O S 5000/2500 2500/1000 hFE NPN/PNP CO hO lc (A) 1.7 2.3 ^CEsat (V) "g C/> (81 co ro lc (A)"" 30 30 PD (W) @ T c = 60°C Pentawatt ® Pentawatt ® PACKAGE Hi-rel version


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    T0-99/DIP O-99/DIP L115T1 O-100 L148T1 l141 L141T2 l141 T1 709C 709a TO-99 L141T1 MA702C PDF

    electronic organ

    Abstract: M-255 h629 rhythm rhythm generator TO-99 BINARY SWITCH M254 organ M087
    Text: MOS INTEGRATED CIRCUITS M 087 Tone generator 1 5 -12 2 _ M 147 13 bit latch pedal sustain 1 5 -1 2 2 or 0.5 - M 250 * Rhythm generator - 5 -12 DC to 0.1 12 M 251 Arpeggio, chord and bass 1 5 -12 1 to 12 - generator — PACKAGE TEMP. RANGE °C POWER CONS. (mW)


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    O-100 T0-100 electronic organ M-255 h629 rhythm rhythm generator TO-99 BINARY SWITCH M254 organ M087 PDF

    3N190

    Abstract: TO-99 3N165 3N166 3N191 ITC5911 ITC5912
    Text: HARRIS SEMICOND SECTOR 4 3 0 2 2 7 1 0 0 1 5 7 G 3 .4 27 E D IHAS -3/-Z Differential Amplifiers Continued 5 V'T-Z7-Z£ Junction FETs — N-Channel (Continued) PART NUMBER ITC5911 ITC5912 Vqs1-2 aVGS mV MV/°C PACKAGE Max Max TO-99 TO-99 10 15 20 40 •g


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    G01S7G3 ITC5911 ITC5912 10kHz 3N165 3N190 TO-99 3N166 3N191 PDF

    9926

    Abstract: H.772 TO-99 9915 BINARY SWITCH H772 RTL-9900 nor 3 h770 HALF ADDER
    Text: BIPOLAR DIGITAL ICs continued f (MHz) FANOUT PACKAGE D E S C R IP T IO N (SU) p d J TYPE RTL-9900 series* 15 10 10 10 10 40 20 20 40 40 - - 80 16 16 16 16 TO-99 TO-99 TO-99 TO-99 TO-100 (1) - 90 90 20 20 - TO-100 (1) TO-99 75 77 30 - 16 16 16 TO-99 TO-99


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    RTL-9900 O-100 T0-100 9926 H.772 TO-99 9915 BINARY SWITCH H772 nor 3 h770 HALF ADDER PDF

    2N4044

    Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
    Text: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA


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    3N165 T0-99 3N166 3N188 3N189 3N190 2N4044 2N4045 2N4100 2N4878 3N191 PDF

    ac motor speed control circuit diagram with triac

    Abstract: Triac soft start ic TRIAC Soft start circuit ac motor speed control circuit with triac electronic firing circuit for ac power controller inductive loop circuit diagram UNIVERSAL MOTOR SPEED CIRCUIT triac "universal motor speed controller" power regulator with inductive load ZLD709C
    Text: AMPLIFIERS OPERATIONAL AM PLIFIER ZLD709 The well-known 709 Op-Amp is available in a variety of options ranging from the commercial temperature range device to the approved military device in a hermetic metal-can package. Type Temperature Range °C Package Style


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    ZLD709 ZLD709 ZLD709C CN515T ZN411 ZN411 ac motor speed control circuit diagram with triac Triac soft start ic TRIAC Soft start circuit ac motor speed control circuit with triac electronic firing circuit for ac power controller inductive loop circuit diagram UNIVERSAL MOTOR SPEED CIRCUIT triac "universal motor speed controller" power regulator with inductive load PDF

    S125

    Abstract: VA003J VA003S
    Text: V T C INC TTD D | ci3flfl,i2ei DDD1SD1 5 9388929 V T C INC 99D 01501 VA003 T - 7 V - 07-01 UNITY GAIN VIDEO BUFFER FEATURES CONNECTION DIAG RAM S D ual In -L in e /S O IC Package • Low Offset: 8mV • High Stew Rate: 700V/ns. • Fast Rise Time: 3rts • High Output Current: ±100mA


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    VA003 T-7V-07-0I 00V/ns. 100mA VA003 t00mA 00V/ns 200MHz. MIL-STD-883C, 2500sq S125 VA003J VA003S PDF

    Untitled

    Abstract: No abstract text available
    Text: ff - fo - ^ TMF120, TMF122, Universal Semiconductor TMF121 TMF123 M onolithic D ual N -C hannel Enhancem ent-M ode L ateral D-MOS FETs Ordering Inform ation Differential Gate-Source Voltage Differential Drift TO-99 Hermetic Package TO-99 Package with Shorting Ring


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    TMF120, TMF122, TMF121 TMF123 25/iV/Â 25nVnC 25/1V/Â TMF120HD TMF121HD TMF122HD PDF

    OPA627P

    Abstract: OPA2541M 3553AM Low Bias Current Amplifiers OPA103 3527 op amp 3554M Burr-Brown 3510 OPA550
    Text: OPERATIONAL AMPLIFIERS APPLICATION GROUPS Burr-Brown operational amplifiers are listed in eight applications groups de­ scribed below. This helps you determine and select the best operational amplifier available for a design. Instrumentation amplifiers and isolation


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    F3523 OPA37HT OPA103 OPA104 DEM102 DEM106 itforlS0102 OPA121 OPA627P OPA2541M 3553AM Low Bias Current Amplifiers 3527 op amp 3554M Burr-Brown 3510 OPA550 PDF

    74LS247

    Abstract: 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ 13 □ 12 □ 11 □ 10 □ 9 □ 8 □ 8 OUTPUT A □ Vcc □ OUT B 7 2 +IN A Q 3 -IN A ^ 4 GND 6 □ +IN B 5 □ -IN B 2 OUT D Vss OUT C OUT C IN C I27 I28 mA5SS 131 7528, 7529


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    mA2240 mA555 74LS247 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143 PDF