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    TOSHIBA DIODE 1A Search Results

    TOSHIBA DIODE 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA DIODE 1A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the


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    TLP4222G TLP4222G-2 UL1577, E67349 11-5B2 PDF

    TLP3123

    Abstract: No abstract text available
    Text: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.


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    TLP3123 TLP3123 54SOP4) PDF

    11-5B2

    Abstract: E67349 TLP4222G TLP4222G-2
    Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the


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    TLP4222G TLP4222G-2 UL1577, E67349 TLP4222G 11-5B2 TLP422nclude 11-5B2 E67349 TLP4222G-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.


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    TLP3123 TLP3123 54SOP4) PDF

    11-5B2

    Abstract: TLP4222G TLP4222G-2 photorelay
    Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the


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    TLP4222G TLP4222G-2 TLP4222G 11-5B2 11-5B2 TLP4222G-2 photorelay PDF

    1S43

    Abstract: 11-5B2 E67349 TLP4222G TLP4222G-2
    Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the


    Original
    TLP4222G TLP4222G-2 UL1577, E67349 TLP4222G 11-5B2 1S43 11-5B2 E67349 TLP4222G-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.


    Original
    TLP3123 TLP3123 54SOP4) PDF

    TLP3123

    Abstract: No abstract text available
    Text: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.


    Original
    TLP3123 TLP3123 54SOP4) PDF

    11-5B2

    Abstract: E67349 TLP4222G TLP4222G-2
    Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the


    Original
    TLP4222G TLP4222G-2 UL1577, E67349 TLP4222G 11-5B2 11-5B2 E67349 TLP4222G-2 PDF

    TLP3122

    Abstract: No abstract text available
    Text: TLP3122 TOSHIBA Photocoupler PHOTORELAY TLP3122 Measurement Instruments Logic Testers / Memory Testers Board Testers / Scanners Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3122 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.


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    TLP3122 TLP3122 54SOP4) PDF

    Untitled

    Abstract: No abstract text available
    Text: TLP4007G TOSHIBA Photocoupler Photorelay TLP4007G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4007G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.


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    TLP4007G TLP4007G 11-10C4 PDF

    TLP4027G

    Abstract: No abstract text available
    Text: TLP4027G TOSHIBA Photocoupler Photorelay TLP4027G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4027G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.


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    TLP4027G TLP4027G 11-10H1 PDF

    5dl2c

    Abstract: No abstract text available
    Text: TOSHIBA 5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive Peak Reverse Voltage


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    5DL2C48A 5FL2C48A U5DL2C48A U5FL2C48A 5DL2C48A, 5FL2C48A, U5DL2C48A, 5FL2C48A 5dl2c PDF

    20GL2C

    Abstract: No abstract text available
    Text: TOSHIBA U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage Average Output Rectified Current Ultra Fast Reverse-Recovery Time


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    U20GL2C48A 20GL2C PDF

    5dl2c a

    Abstract: 5DL2C41A 5dl2c
    Text: TOSHIBA 5DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C41A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 10.3MAX., • Repetitive Peak Reverse Voltage Vr RM = 200V • Average Output Rectified Current


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    5DL2C41A 961001EAA2' 5dl2c a 5DL2C41A 5dl2c PDF

    1N4607

    Abstract: SC-40 TOSHIBA 1N4607
    Text: TOSHIBA {DISCRET E/ OPT O} b? 9097250 TOSHIBA DISCRETE/OPTO 1N4607 - DDDTSTS □ "J , D rr.o'lS-*? 67C 09295 Silicon Epitaxial.-Planar Type Diode TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.


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    1N4607 SC-40 100mA 250mA 350ma 400mA 500mA, 1N4607 SC-40 TOSHIBA 1N4607 PDF

    400v 20A ultra fast recovery diode

    Abstract: U20GL2C48A
    Text: TOSHIBA U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION U n it in mm CONVERTER & CHOPPER APPLICATION 1.32 10.3 MAX. Repetitive Peak Reverse Voltage V r R M = 400V Average Output Rectified Current


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    U20GL2C48A 20GL2C 400v 20A ultra fast recovery diode U20GL2C48A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 10FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 1 QFWJ2CZ47M LO W FORW ARD VOLTAGE SCHOTTKY BARRIER DIODE Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION 10.3MAX., 03.2d 0.2 CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage


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    10FWJ2CZ47M QFWJ2CZ47M PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TA8323F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA 8 323 F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and free­ wheeling diode.


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    TA8323F TA8323F SSOP16 RN5006) RN6006) MFP-16 SSOP16-P-225-1 PDF

    ST1000EX21

    Abstract: transistor JF 1000A diode 5V IGBT 1000A
    Text: TOSHIBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • All Electric contacts by Pressure Structure and Airtight Package Anti-Parallel Fast Recovery Diode in This Package


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    ST1000EX21 60MAX. 1250g ST1000EX21 transistor JF 1000A diode 5V IGBT 1000A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TD62M4700F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4700F EXCELLENT LOW SATURATION H-BRIDGE DRIVER TD62M470QF is low voltage use Multi Chip H-Bridge Driver 1C incorporates 4 low saturation discrete Transistors which equipped bias resistor and diode. This 1C is


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    TD62M4700F TD62M470QF MFP-16 12WER SSOP16-P-225-1 PDF

    diode c48

    Abstract: 10DL2C 10DL2C48A 10FL2C48A U10DL2C48A U10FL2C48A 10FL2
    Text: TOSHIBA 10DL2C48A, 10FL2C48A#U 10DL2C48A#U 10FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. • • • • Repetitive Peak Reverse Voltage : V rrm = 200, 300V


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    10DL2C48A 10FL2 U10DL2C48A 10FL2C48A 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A diode c48 10DL2C 10FL2C48A U10FL2C48A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1160 TOSHIBA 2 S D 1 160 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. @ Built-in Free Wheel Diode


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    2SD1160 2SD1160 2SD1160-0 2SD1160-Y PDF

    toshiba diode 2A

    Abstract: No abstract text available
    Text: 2SD1160 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD116Q SWITCHING APPLICATIONS. Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS. • High DC Current Gain • Low Saturation Voltage : 0.6V MAX. @ • Built-in Free Wheel Diode MAXIMUM RATINGS (Ta = 25°C)


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    2SD1160 2SD116Q toshiba diode 2A PDF