Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TOSHIBA MARKING ABBREVIATION TRANSISTOR Search Results

    TOSHIBA MARKING ABBREVIATION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MARKING ABBREVIATION TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor C2230

    Abstract: c2230 C2230A C2230 NPN Transistor 2sc2230 transistor C2230a 2SC2230A
    Text: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain


    Original     		2SC2230 2SC2230A 2SC2230A) 2SC2230 transistor C2230 c2230 C2230A C2230 NPN Transistor transistor C2230a 2SC2230A PDF

    transistor C2230

    Abstract: c2230a 2SC2230 C2230 C2230 NPN Transistor
    Text: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain


    Original     		2SC2230 2SC2230A 2SC2230A) 2SC2230A O-92MOD transistor C2230 c2230a C2230 C2230 NPN Transistor PDF

    c4686

    Abstract: transistor C4686 c4686a equivalent transistor c4686a 2SC4686 transistor c4686A 2SC4686A IC5010
    Text: 2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High voltage: VCEO = 1200 V max • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)


    Original     		2SC4686 2SC4686A 2SC4686, 2SC4686 c4686 transistor C4686 c4686a equivalent transistor c4686a transistor c4686A 2SC4686A IC5010 PDF

    transistor C4686

    Abstract: c4686A
    Text: 2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High voltage: VCEO = 1200 V max • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)


    Original     		2SC4686 2SC4686A 2SC4686, 2SC4686 10are transistor C4686 c4686A PDF

    transistor C4686

    Abstract: C4686 c4686a 2SC4686 2SC468
    Text: 2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High voltage: VCEO = 1200 V max • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)


    Original     		2SC4686 2SC4686A 2SC4686, 2SC4686A transistor C4686 C4686 c4686a 2SC468 PDF

    transistor C2230

    Abstract: C2230 C2230 NPN Transistor c2230a 2SC2230 2SC2230A
    Text: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain


    Original     		2SC2230 2SC2230A 2SC2230A) 2SC2230 transistor C2230 C2230 C2230 NPN Transistor c2230a 2SC2230A PDF

    C4686

    Abstract: c4686A transistor C4686 2SC4686A equivalent transistor c4686a 2SC4686
    Text: 2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications Unit: mm • High voltage: VCEO = 1200 V max • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)


    Original     		2SC4686 2SC4686A 2SC4686, 2SC4686 C4686 c4686A transistor C4686 2SC4686A equivalent transistor c4686a PDF

    toshiba audio power amplifier

    Abstract: K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2162 Audio Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338


    Original     		2SK2162 2SJ338 SC-64 toshiba audio power amplifier K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ PDF

    a1926

    Abstract: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type 2-7D101A
    Text: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SA1926 a1926 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type 2-7D101A PDF

    GT40M101

    Abstract: 216F
    Text: GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 Unit: mm HIGH POWER SWITCHING APPLICATIONS High input impedance High speed Low saturation voltage : tf = 0.4µs Max. : VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25°C)


    Original     		GT40M101 2-16F GT40M101 216F PDF

    gt40t101

    Abstract: 030619EAA
    Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement mode type High speed : tf = 0.4 µs Max. (IC = 40 A) Low saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)


    Original     		GT40T101 2-21F2C gt40t101 030619EAA PDF

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: Toshiba 2SJ 2sk2162
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338


    Original     		2SK2162 2SJ338 SC-64 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Toshiba 2SJ 2sk2162 PDF

    2SC5563

    Abstract: DSA0042876
    Text: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		2SC5563 SC-67 2SC5563 DSA0042876 PDF

    transistor npn C536

    Abstract: c5360 transistor C536 2SC5360
    Text: 2SC5360 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5360 Color TV Chroma Output Applications Unit: mm • High voltage: VCEO = 300 V • Small collector output capacitance: Cob = 5.0 pF typ. • High transition frequency: fT = 100 MHz (typ.) Maximum Ratings (Tc = 25°C)


    Original     		2SC5360 transistor npn C536 c5360 transistor C536 2SC5360 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		2SC5563 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1887 High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating


    Original     		2SA1887 SC-67 2-10R1A PDF

    transistor a017

    Abstract: No abstract text available
    Text: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SA1926 transistor a017 PDF

    A1887

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1887
    Text: 2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1887 High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating


    Original     		2SA1887 SC-67 2-10R1A A1887 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1887 PDF

    C5201 transistor

    Abstract: C5201 2SC5201
    Text: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SC5201 O-92MOD C5201 transistor C5201 2SC5201 PDF

    C5201 transistor

    Abstract: No abstract text available
    Text: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SC5201 O-92are C5201 transistor PDF

    k3497

    Abstract: 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349
    Text: 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage


    Original     		2SK3497 2SJ618 k3497 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349 PDF

    toshiba marking code transistor

    Abstract: 2SC5612
    Text: 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : VCBO = 2000 V Low Saturation Voltage : VCE sat = 3 V (Max.) High Speed : tf = 0.15µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C)


    Original     		2SC5612 toshiba marking code transistor 2SC5612 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SA1926 2-7D101A PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed. : tf = 0.30µs Max. Low saturation voltage. : VCE(sat) = 2.7V (Max.)


    Original     		GT50J102 2-21F2C PDF