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    2SC5201 Price and Stock

    Toshiba America Electronic Components 2SC5201,F(J

    TRANS NPN 600V 0.05A TO-92MOD
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    Toshiba America Electronic Components 2SC5201,T6F(J

    TRANS NPN 600V 0.05A TO-92MOD
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    Toshiba America Electronic Components 2SC5201(TE6,F,M)

    TRANS NPN 600V 0.05A TO-92MOD
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    Toshiba America Electronic Components 2SC5201,T6MURAF(J

    TRANS NPN 600V 0.05A TO-92MOD
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    Toshiba America Electronic Components 2SC5201(T6MURATAFM

    TRANS NPN 600V 0.05A TO-92MOD
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    2SC5201 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5201 Toshiba 2SC5201 - TRANSISTOR 50 mA, 600 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC5201 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5201 Toshiba Silicon NPN transistor for high voltage switching applications Scan PDF
    2SC5201,F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50MA 600V TO226-3 Original PDF
    2SC5201,T6F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50MA 600V TO226-3 Original PDF
    2SC5201,T6MURAF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50MA 600V TO226-3 Original PDF
    2SC5201(T6MURATAFM Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50MA 600V TO226-3 Original PDF
    2SC5201(TE6,F,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50MA 600V TO226-3 Original PDF

    2SC5201 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C5201 transistor

    Abstract: C5201 2SC5201
    Text: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SC5201 O-92MOD C5201 transistor C5201 2SC5201 PDF

    C5201 transistor

    Abstract: No abstract text available
    Text: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SC5201 O-92are C5201 transistor PDF

    C5201

    Abstract: 2SC5201
    Text: 2SC5201 東芝トランジスタ シリコンNPN三重拡散形 2SC5201 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • 飽和電圧が低い。 : VCE sat = 1.0 V (最大) (IC = 20 mA, IB = 0.5 mA) : VCEO = 600 V 絶対最大定格 (Ta = 25°C)


    Original     		2SC5201 O-92MOD C5201 2SC5201 PDF

    C5201 transistor

    Abstract: No abstract text available
    Text: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC5201 O-92MOD C5201 transistor PDF

    2SC5201

    Abstract: C520-1 C5201 2SC5201TPE6
    Text: 2SC5201 東芝トランジスタ シリコンNPN三重拡散形 2SC5201 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • 飽和電圧が低い。 : VCE sat = 1.0 V (最大) (IC = 20 mA, IB = 0.5 mA) : VCEO = 600 V 絶対最大定格 (Ta = 25°C)


    Original     		2SC5201 O-92MOD 20070701-JA 2SC5201 C520-1 C5201 2SC5201TPE6 PDF

    C5201 transistor

    Abstract: c5201 Transistor C5201 2SC5201
    Text: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC5201 C5201 transistor c5201 Transistor C5201 2SC5201 PDF

    C5201 transistor

    Abstract: 2sc5201 c5201 25j1A
    Text: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC5201 C5201 transistor 2sc5201 c5201 25j1A PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor PDF

    2SC5201

    Abstract: No abstract text available
    Text: 2SC5201 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5201 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. • • High Voltage : V c e O - 600 V Low Saturation Voltage •• V/~ITI ' v ^ .c j iA = 1 nV ÍM a y ì Tri = 9.0 m A


    OCR Scan     		2SC5201 O-92MOD 2SC5201 PDF

    2SC5201

    Abstract: No abstract text available
    Text: 2SC5201 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5201 HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. • • Unit in mm High Voltage : V c e O - 600 V Low Saturation Voltage •• V/~ITI ' v ^ .c j iA = 1 nV ÍM a y ì Tri = 9.0 m A


    OCR Scan     		2SC5201 O-92MOD 2SC5201 PDF

    NPN Transistor 600V

    Abstract: TRANSISTOR 2SC5201
    Text: 2SC5201 T O SH IB A TENTATIVE TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE <;r >5 1 n 1 i Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. • • High Voltage : V ç ; e q = 600V Low Saturation Voltage : VCE sat - 1-ov (Max.) (Iq = 20mA, Iß = 0.5mA)


    OCR Scan     		2SC5201 O-92MOD NPN Transistor 600V TRANSISTOR 2SC5201 PDF

    2SC5201

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5201 2SC5201 T O SH IBA TRANSISTO R SILICON NPN TRIPLE DIFFUSED M E S A TYPE Unit in mm HIGH VOLTAGE SW ITCH ING APPLICATIO NS 5.1 M AX. • • High Voltage : V c e O = 600 V Low Saturation Voltage : VcE sat = 1-0 V (Max.) (IC = 20 mA, IB = 0.5 mA)


    OCR Scan     		2SC5201 O-92MOD 2SC5201 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5201 TOSHIBA 2SC5201 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1M A X. • • High Voltage : Vç e O = 600 V Low Saturation Voltage : VCE sat = !-0 v (Max.) (Iß = 20 mA, lg = 0.5 mA) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SC5201 O-92MOD PDF