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    TOSHIBA MARKING CODE TRANSISTOR Search Results

    TOSHIBA MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING S3H TRANSISTOR

    Abstract: DIODE S3H S3H MARKING S3H 02 diode TPC6108
    Text: TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPC6108 TENTATIVE Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		PDF TPC6108 MARKING S3H TRANSISTOR DIODE S3H S3H MARKING S3H 02 diode TPC6108

    TPCT4204

    Abstract: marking code SSs
    Text: TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCT4204 TENTATIVE Lithium Ion Secondary Battery Applications Unit: mm • Lead(Pb)-Free • Small footprint due to small and thin package • Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.)


    Original     		PDF TPCT4204 TPCT4204 marking code SSs

    Untitled

    Abstract: No abstract text available
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303

    Untitled

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8102

    toshiba f5b

    Abstract: TPCF8303
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303 toshiba f5b TPCF8303

    toshiba weekly code marking

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8102 toshiba weekly code marking

    cha marking code

    Abstract: No abstract text available
    Text: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		PDF TPC8303 cha marking code

    Untitled

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to a small and slim package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8102

    Untitled

    Abstract: No abstract text available
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303

    Untitled

    Abstract: No abstract text available
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136

    Untitled

    Abstract: No abstract text available
    Text: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		PDF TPC8303

    Untitled

    Abstract: No abstract text available
    Text: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		PDF TPC6108

    TPCF8303

    Abstract: toshiba f5b
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303 TPCF8303 toshiba f5b

    8g136

    Abstract: toshiba week code marking
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136 dissipationt10 8g136 toshiba week code marking

    Untitled

    Abstract: No abstract text available
    Text: TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.)


    Original     		PDF TPC6012

    Untitled

    Abstract: No abstract text available
    Text: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		PDF TPC8303

    Untitled

    Abstract: No abstract text available
    Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance


    Original     		PDF TPC8203

    Untitled

    Abstract: No abstract text available
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		PDF TPCF8103

    Untitled

    Abstract: No abstract text available
    Text: TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process TPCP8601 Unit: mm High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications 0.33±0.05 0.05 M A 5 • High DC current gain: hFE = 200 to 500 (IC = −0.6 A)


    Original     		PDF TPCP8601

    Untitled

    Abstract: No abstract text available
    Text: TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPC8012-H Switching Regulator Application DC-DC Converter Application Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.35 S (typ.)


    Original     		PDF TPC8012-H

    MARKING S3H TRANSISTOR

    Abstract: TPC6108
    Text: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		PDF TPC6108 MARKING S3H TRANSISTOR TPC6108

    TPCF8103

    Abstract: No abstract text available
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8103 TPCF8103

    TPC8003

    Abstract: No abstract text available
    Text: TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance


    Original     		PDF TPC8003 TPC8003

    Untitled

    Abstract: No abstract text available
    Text: TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain • Low collector-emitter saturation voltage : VCE sat = -0.23 V (max) High-speed switching : tf = 70 ns (typ.)


    Original     		PDF TPC6604