TP5660
Abstract: TP5650 TP5650N
Text: 2-38 TP5650/TP5660 Supply Voltage VDD - Vss Maximum Voltage at Any Other Pin 13V Operating Temperature (TA) Storage Temperature Maximum Power Dissipation VDD + 0.3V to Vs s -0 .3 V -3 0 °C to + 6 0 °C -5 5 °C to + 1 5 0 °C 500 mW Electrical Characteristics 2.5V<VDD< 10V, unless otherwise specified, Ta within operating temperature range
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TP5650/TP5660
TP5700
TP5660
TP5650
TP5650N
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transistor 1pv
Abstract: No abstract text available
Text: TP5650, TP5660 PRELIMINARY CT| National É æ Semiconductor TP5650, TP5660 Ten-Number Repertory DTMF Generators General Description Features The TP5650 and TP5660 are m onolithic integrated circuits built using National’s advanced P2CMOS process double poly-sillcon gate CMOS . They interface directly to
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TP5650,
TP5660
TP5660
TP5650
TP5600
TP5650
transistor 1pv
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