Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TPC8001 Search Results

    SF Impression Pixel

    TPC8001 Price and Stock

    Toshiba America Electronic Components TPC8001-H(TE85LFM

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TPC8001-H(TE85LFM 5,992
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components TPC8001(TE12L)

    7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET (Also Known As: TPC8001)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TPC8001(TE12L) 8,899
    • 1 $0.75
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.75
    • 10000 $0.2625
    		Buy Now
    TPC8001(TE12L) 8,899
    • 1 $0.75
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.75
    • 10000 $0.2625
    		Buy Now

    Toshiba America Electronic Components TPC8001TE12L

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TPC8001TE12L 1,220
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    TPC8001 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPC8001 Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    TPC8001 Toshiba Original PDF
    TPC8001 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8001 Toshiba N-Channel MOSFET Original PDF
    TPC8001 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8001 Toshiba N-Channel Enhancement MOSFET Scan PDF

    TPC8001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance


    Original     		PDF TPC8001

    Untitled

    Abstract: No abstract text available
    Text: TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Small footprint due to small and thin package z Low drain−source ON resistance


    Original     		PDF TPC8001

    TPC8001

    Abstract: No abstract text available
    Text: TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π •MOSVI TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance


    Original     		PDF TPC8001 TPC8001

    TPC8001

    Abstract: No abstract text available
    Text: TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance


    Original     		PDF TPC8001 TPC8001

    TPC8001

    Abstract: No abstract text available
    Text: TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance


    Original     		PDF TPC8001 TPC8001

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    7103F

    Abstract: HSON8 CLS01 TE12L TPCP8001-H VLF10040-1R0N9R7 GRM1552C1H221J
    Text: TCV7103F 東芝 CMOS集積回路 シリコン モノリシック TCV7103F 降圧型DC-DCコンバータIC TCV7103F は降圧型 DC-DC コンバータ用 1 チップ IC です。 高速･低オン抵抗のパワーMOSFET を内蔵しており､外付けローサイド


    Original     		PDF TCV7103F HSON8-P-0505-1 TPCP8001-H 7103F TE12L, 10mA5A10mA) 7103F HSON8 CLS01 TE12L TPCP8001-H VLF10040-1R0N9R7 GRM1552C1H221J

    K2057

    Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
    Text: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series


    Original     		PDF BCE0017A 2SK2610) 2SK794) K2057 toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662

    TPC8103

    Abstract: TPCS8210 application tpc8010 AD* SOP-8 TPCS8201 TPCS8206 tpc8109 tpc8102 tpc8204 tpc8207
    Text: [ 7 ] Superseded and Discontinued Product List [ 7 ] Superseded and Discontinued Product List [ 7 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.


    Original     		PDF TPC8001 TPC8010-H TPC8002 TPC8014 TPC8005-H TPC8109 TPC8201 TPC8209 TPC8202 TPC8208 TPC8103 TPCS8210 application tpc8010 AD* SOP-8 TPCS8201 TPCS8206 tpc8109 tpc8102 tpc8204 tpc8207

    Untitled

    Abstract: No abstract text available
    Text: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)


    OCR Scan     		PDF TPC8001 g--10

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)


    OCR Scan     		PDF TPC8001 15mfi 10//A 20kfl)

    TPC8001

    Abstract: No abstract text available
    Text: TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • • • • Low Drain-Source ON Resistance : Rd S (ON)= 15mO (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)


    OCR Scan     		PDF TPC8001 20kil) TPC8001

    TPC8001

    Abstract: No abstract text available
    Text: TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR tt-MOSVI SILICON N CHANNEL MOS TYPE TPC8001 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : RßS (ON) = 15 mH (Typ.) High Forward Transfer Admittance: |Yfs| = 11 S (Typ.)


    OCR Scan     		PDF TPC8001 TPC8001

    Untitled

    Abstract: No abstract text available
    Text: TPC8001 TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low D rain-Source ON R esistance • H igh Forw ard T ransfer A dm ittance: |Yfs| = l l S (Typ.)


    OCR Scan     		PDF TPC8001

    Untitled

    Abstract: No abstract text available
    Text: TPC8001 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI T P ffin m LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON)= 15m£2 (Typ.) • High Forward Transfer Adm ittance: |Yfs| = IIS (Typ.)


    OCR Scan     		PDF TPC8001 --24V,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ßS (ON)= 15mO (Typ.) High Forward Transfer Adm ittance: |Yfs| = l l S (Typ.)


    OCR Scan     		PDF TPC8001