TPU1897 Search Results

TP4221

Contextual Info: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS

Contextual Info: AL L E GRO MI C ROS Y S T E MS 8514019 SPRA G U E. I NC T3 D • 0 5 D4 3 3 Ö S E M IC O N D S / I C S GDD3bü3 93D 1 ■ ALGR 0 3 6 0 3 J> PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGs on V(BR)GSS

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

tp4093

Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

2N3820

Abstract: TP2609 MPF111 TP3331 MPF110 MPF112 MPF820 NJ32 TPBC264A TPBC264B
Contextual Info: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SPRAGUE. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 93D 03603 T J> T ï'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS Limits

2N5458

Abstract: TP4221
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions

Contextual Info: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SP RA GU E. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 9 3 D 03 6 0 3 T J> T ï 'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS

npd5564

Abstract: 2N4393 MOTOROLA 2sk194 2sk162 KE4393 2SK146 2sk162 hitachi 2SK147 NPD5566 FET package TO-71
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g,. VGS(Off) Min (S) Max Max (V) lass Max (A) Clsa Max (F) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Channel JFETs, (Cont'd) 5 10 2SK364 2SK366 2SK240 2SK431 2SK170 UC704

2N6485

Abstract: 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117
Contextual Info: T triìfif t i r il f i iij iv n i’T n " f * ALLEGRO MICROSYSTEMS INC' 33E D .s , • , Q50433Ô QOOSb'lb ô I B À L 6 R -os TO*92/TO-226AA ELECTRICAL CHARACTERISTICS at TA = 25°C ^GS<óH Device Type ^ BHKiSS Min. @fQ - (V) 2N3819 TP3821 TP3822 TP3823

TP4221

Abstract: 2n 5459 DSG20 ALLEGRO M I C R O S Y S T E M S INC
Contextual Info: •• - f * ALLE6R0 MICROSYSTEMS INC' 33E D • • .'••■•'v v Q5G433Ô QOGSb'ib Ô « [ AL GR ; if.: ■ ■ ïâ M S e M ■Æ ÊÊm '■"h ^ - o s T O *9 2 / T O - 2 2 6 A A ELECTRICAL CHARACTERISTICS a t T\ = 25°C A - ^GSioff Óóvlce Type V)