RCA 40251
Abstract: rca 2n6254 2N3055H RCA 40251 2N3055H 2N6254 2N6253 2n6254 rca 2N6371 S 40251
Text: SEMELAB UIIHB POWER TR A N S ISTO R S 2N3055H, 2 N 6 2 5 3 , 2N 6254, 2N6371, 40251 H o m e ta x ia l-B a s e High-Power Silicon N -P -N Transistors • 2 N 6 2 5 4 : prem ium type fro m 2 N 3 0 5 5H Rugged, Broadly Applicable Devices For Industrial and Commercial Use
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2N3055H,
2N6253,
2N6254,
2N6371,
2N3055H
2N6253
2N6254
RDF-10:
RCA 40251
rca 2n6254
2N3055H RCA
40251
2N6254
2n6254 rca
2N6371
S 40251
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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PDF
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2N3065
Abstract: MJ16015 mj15015 MJ15016 2N3055A 2N3065A 3055A 2N3055* motorola
Text: D FJt.3t.7SS4 n O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA, SC XSTRS/R D 96D 8 0 2 7 5 F DDflOaTS T r i ^ b L ~ r ~ 3 3 - s ^ MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA NPN PNP 2N3055A MJ15015 MJ2955A MJ15016 C O M P L E M E N T A R Y S IL IC O N HIGH-POW ER TR A N SISTO R S
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2N3055A
MJ15015
MJ2955A
MJ15016
2N3065
MJ16015
mj15015
MJ15016
2N3065A
3055A
2N3055* motorola
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PDF
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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N3055
Abstract: ZDT30 2N3440 2N3055 2N3439 ZT1480 ZT1482 ZT1484 ZT1486 ZT1488
Text: S ILIC O N TR A N SISTO R S High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.
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ZT1480
ZT1482
ZT1484
ZT1486
ZT1488
ZT1490
2N3055
2N3439
2N3440
2N3441
N3055
ZDT30
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2n3054
Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Text: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include
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edi358
TA7557
TA7611
TA7612
TA7639
TA7640
TA7719
TA7739
TA7740
TA7741
2n3054
RCA transistor 40410
RCA 40310
2n2870
RCA 40636 transistor
transistor 40410
ta7719
2n2338
2N2405
2N2147
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MJ15016
Abstract: 2n3055a MJ15015 2N3055 NPN Transistor
Text: ON Semiconductort NPN 2N3055A Complementary Silicon High−Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or
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2N3055.
2N3055A
MJ15015
MJ15016
2N3055A
MJ15015,
MJ15015
MJ15016
2N3055 NPN Transistor
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2N3055
Abstract: NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578
Text: 2H6576 2H6577 2N6578 I NPN SILICON POWER DARLINGTON General-purpose EpiBase for linear and switching Replacement for 2N3055 Popular Voltage transistors, suitable and Driver Performance Diode Protection Can Be Driven from Operating darl ington applications.
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2H6576
2H6577
2N6578
2N3055
2N3055
NPN Transistor 2N3055 darlington
2N6576
2N6577
2N6578
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2N3055* motorola
Abstract: mj15016 motorola 2n3055 motorola 1N6073 2N3055 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A
Text: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power
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2N3055A/D
2N3055A
MJ15015*
2N3055
MJ2955.
MJ2955A
MJ15016*
2N3055A/D*
2N3055* motorola
mj15016 motorola
2n3055 motorola
1N6073
2N3055A
MJ15015
MJ15016
MJ2955
MJ2955A
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mj15015g
Abstract: No abstract text available
Text: 2N3055AG NPN , MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or
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2N3055AG
MJ15015G
MJ15016G
2N3055.
2N3055AG
MJ15015G,
MJ15016G
2N3055A/D
mj15015g
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2N3055
Abstract: MJ2955 mj15015 MJ15016 MJ2955 mexico 1N6073 2N3055A MJ2955A
Text: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or
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2N3055A
MJ15015
2N3055
MJ2955.
MJ2955A
MJ15016
r14525
2N3055A/D
MJ2955
mj15015
MJ15016
MJ2955 mexico
1N6073
2N3055A
MJ2955A
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1N6073
Abstract: 2N3055 2N3055A MJ15015 MJ15016 2N3055A-D 2N30
Text: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or
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2N3055A
MJ15015
MJ15016
2N3055.
r14525
2N3055A/D
1N6073
2N3055
2N3055A
MJ15015
MJ15016
2N3055A-D
2N30
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MJ15015
Abstract: 2n3055a datasheet 2n3055AG MJ15016 MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG
Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These
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2N3055A
MJ15015
MJ15016
MJ15015
MJ15016
2N3055.
2N3055A/D
2n3055a
datasheet 2n3055AG
MJ15015 TRANSISTOR
MJ15015G
MJ15015 application note
1N6073
2N3055
2N3055AG
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PDF
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MJ15015
Abstract: 2N3055A MJ15016 MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055
Text: 2N3055A NPN MJ15015, MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These
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Original
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2N3055A
MJ15015,
MJ15016
MJ15015
MJ15016
2N3055.
2N3055A/D
2N3055A
MJ15015G
MJ15015 application note
2N3055AG
MJ15016G
1N6073
2N3055
DC variable power with 2n3055
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Untitled
Abstract: No abstract text available
Text: 2N3055A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO3 MAXIMUM RATINGS IC 15 A IB 7.0 A VCE 60 V PDISS 115 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC
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2N3055A
2N3055A
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3055A m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T03 U 4J MAXIMUM RATINGS 7.0 A VCE p 1 DISS T 60 V .65 5 -675 115 W @ T c = 25°C -65 °C to +200 °C "^"sTG
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OCR Scan
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2N3055A
2N3055A
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PDF
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2N3055A
Abstract: Vce(sat) MJ2955A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A
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2N3055A
MJ2955A
2N3055A
Vce(sat)
MJ2955A
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PDF
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2N3055A
Abstract: MJ2955A
Text: SavantIC Semiconductor Product Specification 2N3055A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type MJ2955A ·Excellent Safe Operating Area APPLICATIONS ·For high power audio ,stepping motor and other linear applications
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2N3055A
MJ2955A
60Vdc
2N3055A
MJ2955A
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PDF
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2N30S5
Abstract: 2N305
Text: 2N3055A 2N3055A NPN POWER TRANSISTOR High Power Audio, Stepping Motor and Other Linear Applications DIM A B C D E F G H J K I M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11,15 12,25 26,67 3,84 4,19 - PIN CONFIGURATION
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2N3055A
2N30S5A
2N30S5
2N305
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available
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OCR Scan
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2N3055
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PDF
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Transistor 2n3055
Abstract: power transistor 2n3055 t03 package transistor pin dimensions tr 2n3055 2N3055 2n3055 pin
Text: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available
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2N3055
Transistor 2n3055
power transistor 2n3055
t03 package transistor pin dimensions
tr 2n3055
2N3055
2n3055 pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ^zmi-Conductoi 'LPtoaucti, Dna. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 NPN 2N3055A Complementary Silicon High-Power TVansistors MJ15015 . . PowerBase complementary transistors designed for high
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2N3055A
MJ15015
2N3055
MJ2955.
MJ2955A
MJ15016
2N3055A
MJ15015
MJ2955A
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PDF
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Untitled
Abstract: No abstract text available
Text: c^ Jstisii*/ <£s.m.i-(lon.<Licko\ Una. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN 2N3055A Complementary Silicon High-Power TVansistors MJ15015 . . PowerBase complementary transistors designed for high
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2N3055A
MJ15015
2N3055
MJ2955.
MJ2955A
MJ15016
TQ-204AA
550REF
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MJ15016
Abstract: 2N3055AG MJ15015 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016
Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These
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Original
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2N3055A
MJ15015
MJ15016
MJ15015
MJ15016
2N3055.
O-204AA
2N3055AG
2N3055A
MJ15015G
MJ15016G
2N3055 NPN Transistor
2N3055
2N3055A 2n3055
MJ-15016
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PDF
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