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    TR AMPLIFIER Search Results

    TR AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy
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    TR AMPLIFIER Price and Stock

    Microchip Technology Inc MIC7300YM5-TR

    Operational Amplifier - 1 Amplifier - 550 kHz - 0.5 V/µs - 2.2V to 10V - SOT-23 - 5 Pins.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MIC7300YM5-TR 18,000
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    • 10000 $0.2983
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    Microchip Technology Inc MIC7111YM5-TR

    Op Amp Single Micropower Amplifier R-R I/O 11V 5-Pin SOT-23 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MIC7111YM5-TR 15,640
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    • 1000 $0.705
    • 10000 $0.684
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    Microchip Technology Inc UA5M15MP/TR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com UA5M15MP/TR
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    • 100 $148.58
    • 1000 $50.89
    • 10000 $50.89
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    Microchip Technology Inc MMA044PP3/TR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMA044PP3/TR
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    • 100 $101.93
    • 1000 $36.45
    • 10000 $36.45
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    Microchip Technology Inc MMA043PP4/TR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMA043PP4/TR
    • 1 -
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    • 100 $247.22
    • 1000 $84.68
    • 10000 $84.68
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    TR AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MP6X11

    Abstract: No abstract text available
    Text: Data Sheet Midium Power Transistors 30V / 1A MP6X11  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features Low saturation voltage VCE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) (1) Tr.1 (2) Tr.1 (3) Tr.2


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    PDF MP6X11 500mA R1120A MP6X11

    tda120XX

    Abstract: sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1
    Text: N U N U N U N U N U C C C C C O O O O O TR O TR O TR O TR LL LL LL LL ED ED ED ED C PY PY PY P O O O O C C C U U U N N O O O C C C Product data sheet N N N Rev. 3.6 — 26 April 2006 O TR N N N N N Versatile signal processor for low- and mid-range TV applications


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    PDF -TDA110XX/N1F -TDA120XX/N1F UOCIII-TDA110XX-120XX/N1F tda120XX sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1

    MPT6

    Abstract: No abstract text available
    Text: Midium Power Transistors -30V / -1A MP6T11  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features Low saturation voltage V CE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA) (1) Tr.1 (2) Tr.1 (3) Tr.2


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    PDF MP6T11 -500mA -25mA) R1010A MPT6

    qml-38535

    Abstract: CDFP2-F14 GDFP1-F14 GDFP1-G14 LM124A 5962-99504
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Make changes to TR(tr), TR(os), SR+, SR-, NI(BB), NI(PC), CS tests as specified in table I , 1.5, 4.4.1b, and table II. - ro 99-10-20 R. MONNIN B Add test conditions to the input offset voltage temperature sensitivity test and


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    EIA-625

    Abstract: GR-253-CORE GR-468-CORE NLT06-80-PA 1334 diode
    Text: Preliminary Data Sheet February 2003 TriQuint Optoelectronics NetLight NLT06-80-PA 622 Mb/s 1550 nm Laser Transceiver for Extended Long Reach Applications CT Tr iQ ui n U t SE M IC ON D ® R nt TO ui DUC iQCON TrSEMI T NL iver e sc an Tr Tr NL OR an T sc


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    PDF NLT06-80-PA 20-pin DS02-267 EIA-625 GR-253-CORE GR-468-CORE 1334 diode

    EIA-625

    Abstract: GR-253-CORE GR-468-CORE NLT06-80-RA 1334 diode
    Text: Preliminary Data Sheet February 2003 TriQuint Optoelectronics NetLight NLT06-80-RA 622 Mb/s 1550 nm Laser Transceiver with CDR for Extended Long Reach Applications SE M IC ON D CT Tr iQ ui n U t ® R nt TO ui DUC iQCON TrSEMI T NL iver e sc an Tr Tr NL OR


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    PDF NLT06-80-RA 20-pin DS02-268 EIA-625 GR-253-CORE GR-468-CORE 1334 diode

    8001601CA

    Abstract: qml-38535 HA1-2420
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Pages 4 and 5 table I, change test conditions limits for: ICC, ID, QTR, CMR, TR(tr), and TR(OS). 85-07-31 N. A. Hauck B Convert to military drawing format. Change CAGE code to 67268. Add case outline 2. Changes to 1.3 and 1.4. Changes to conditions and limits in table I.


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    PDF HA1-2420/883 HA4-2420/883 8001601CA qml-38535 HA1-2420

    MCT2E soic

    Abstract: hma121 H11AG3 moc3041 MOC3051 MOC3043 equivalent MOC3051-M MOC3041-M MOC256-M moc3041 application note
    Text: Optoelectronics Products Optocouplers 4-Pin DIP Part Number Forward Voltage VF V CTR @ 1mA IF (%) Min Max BVCEO Min (V) BVECO Min (V) tR/tF Max (µs) VISO ACRMS (V) 1 Minute 7500 35 6 300 / 250 5300 Max BVCEO Min (V) BVECO Min (V) tR/tF Max (µs) VISO ACRMS (V)


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    PDF H11B815 H11AA814 H11AA814A NumberOC208-M MOC211-M MOC212-M MOC213-M MOC215-M MOC216-M MOC217-M MCT2E soic hma121 H11AG3 moc3041 MOC3051 MOC3043 equivalent MOC3051-M MOC3041-M MOC256-M moc3041 application note

    FMQ1A

    Abstract: fmq2 TR30 470 R2
    Text: Composite Transistors Transistor Unit •6 d B amplifier Part No. Resistance value Ri 0 Tr, Tr2 Tr, I Tr2 Pd (m W /Total) tiFE Tr, 470 20 -2 0 30 I -5 0 300 120~580 470 FMQ1A Ic (mA) VcEO (V) r2 w VCE (V) 6 Ic (mA) ” ‘C 1 |V ce (V) 120~560| -6 lie (mA)


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    PDF OT-25) FMQ1A fmq2 TR30 470 R2

    5962-99504

    Abstract: 5962R9950401 qml-38535 CDFP2-F14 GDFP1-F14 LM124A 5962R99504 smd TRANSISTOR code YW
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Make changes to TR(tr), TR(os), SR+, SR-, NI(BB), NI(PC), CS tests as specified in table I , 1.5, 4.4.1 b, and table II. - ro 99-10-20 R. MONNIN Add test conditions to the input offset voltage tem perature sensitivity test and


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    PDF LM124AWRQMLV 5962R9950401VZA LM124AWGRQMLV 5962-99504 5962R9950401 qml-38535 CDFP2-F14 GDFP1-F14 LM124A 5962R99504 smd TRANSISTOR code YW

    PE1541

    Abstract: PM8943 Philips capacitor 166 Philips electrolytic 132
    Text: Philips Semiconductors Product specification Video driver hybrid amplifier FEATURES PINNING • Typical transition timer, 10 to 90% with C l = 10 pF: - at 35 V (p-p) swing tr = 2.2 ns; tf = 2.0 ns - at 40 V (p-p) swing tr = 2.3 ns; tf = 2.1 ns - CR3424 PIN


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    PDF CR3424 OT115L. 2600B PE1541, PM8943, PE1541 PM8943 Philips capacitor 166 Philips electrolytic 132

    MMBT2222A

    Abstract: No abstract text available
    Text: This I tr Material In □ . m tr1 Discrete POW ER & Signal Technologies LM National Semiconductor” Surface Mount Transistors LU Copyrighted a a xa -C J3 tr By Ln —3 a NPN General Purpose Amplifiers and Switches V D evice No. SOT-23 Mark M M BT100 (N1)


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    PDF O-236 MMBT2222A b5Q1130 MMBT2222A

    MJ8100

    Abstract: MJ8101
    Text: MJ8100 SILICON MJ8101 5 AM PERE POWER TR A N SISTO R S MEDIUM-POWER PNP SILIC O N TR A N S IS TO R S . . . designed for switching and wide band amplifier applications. • Low Collector-Emitter Saturation Voltage VcE(sat) = 1-2 Vdc (Max) @ lc • 5.0 Amp


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    PDF MJ8100 MJ8101 MJ8100 MJ8101

    AMPLIFICATEUR

    Abstract: No abstract text available
    Text: ANALOGIQUE AMPLIFIER AVEC UNE TRES FAIBLE ERREUR DE PHASE L''utilisation de deux amplificateurs intégrés sur la même puce et donc de caractéristiques très proches permet d'obtenir un ensemble à très faible erreur de phase. ver: 1’0 P -260, qui intègre doux am plifica­


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    PDF rOP-260, AMPLIFICATEUR

    MD2905

    Abstract: MD2905A MD2904 0290B MD290S MD2905AF MO2905 MD2904A Mo29 MD2905F
    Text: MD2904, MD2904A SILICON MD2904F, MD2904AF MD2905, MD2905A MD2905F, MD2905AF MQ2904,MQ2905A M U LT IP LE SILIC O N A N N U LA R TR A N S IS TO R S PNP SILICO N M U LT IP LE TR A N S IS TO R S . . . designed for use as differential amplifiers, dual general-purpose


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    PDF MD2904, MD2904A MD2904F, MD2904AF MD2905, MD2905A MD2905F, MD2905AF MQ2904 MQ2905A MD2905 MD2904 0290B MD290S MO2905 MD2904A Mo29 MD2905F

    Untitled

    Abstract: No abstract text available
    Text: This I tr Material Ln O NPN General Purpose Amplifiers and Switches b -J t-> LU Copyrighted a a a Device No. TN2219A •c a Case Style V CBO V TO-226 99 CEO ^EBO (V) Min (V) Min (V) Min 75 40 6 'cBO V (nA)@ “ Max 10 60 -r tr JT By J3 2N3903 TO-92 (92)


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    PDF bS01130 004GMbM

    MD7021

    Abstract: MQ7021 MD7021F MD702
    Text: MD7021 SILICON MD7021F MQ7021 M U LT IP LE SILIC O N A N N U LA R TR A N S IS TO R S NPN/PNP SILICO N M U LT IP LE TR A N S IS TO R S . . . designed for use as differential am plifiers, sw itches, dual generalpurpose amplifiers, front end detectors, and temperature com ­


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    PDF MD7021 MD7021F MQ7021 MD7021 MQ7021 MD702

    Untitled

    Abstract: No abstract text available
    Text: TR Y w THC4940 Track and Hold Amplifier 150MHz, Small Signal Bandwidth The TR W T H C 4940 is a fast sam pling, w id e -b a n d track and hold a m plifier th a t offers ultra-fast sw itching p e rfo r­ m ance plus an unprecedented array of supporting specifi­


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    PDF THC4940 THC4940X2A 150MHz,

    Tx chain

    Abstract: 41034
    Text: A fa Application Not Design Solution-Amplitude Control M52 Application for Precise Power Control in a TX Chain for Cellular Application: M/A-COM Components SW-277, SW-279 TR High Power TR Switch AT-230 3 Bit Digital Attenuator AT-259 12 dB Voltage Variable Attenuator


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    PDF SW-277, SW-279 AT-230 AT-259 4CS102-A I-233 Tx chain 41034

    11CF11

    Abstract: general electric E12-70 Scans-0017259 td3493 k55b tip 300 volts 50 amperes
    Text: — PRODUCT INFORMATION — ELEC TR O N IC m m Page 1 p j IN A C T IO N Compactron Dissimilar-Double-Triode Pentode TUBES • • COLOR TV TYPE FRAME-GRID V ID E O AMPLIFIER • • M U L T IF U N C T IO N • 21200 MICROMHOS H IG H TR A N S C O N D UC TA NC E TRIODES


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    PDF 11CF11 K-5561 11CF11 11-T0310-B II-T0349-7 K-55BI1-TD349-8 K-55B H-ID349-9 general electric E12-70 Scans-0017259 td3493 k55b tip 300 volts 50 amperes

    SX-10D

    Abstract: SX30 TA023 SX2X SX10D MLC132
    Text: TEKTRONIX INC/ TR I ÖUINT HbE D • ñTObBlñ D0GQE4T 0 ■ TRÖ Digital Product Division Product Data t 'T 4 2 - 4 - I QLSI Standard Cells □ □ Supports LSI solutions from 100MHz to beyond 2GHz Directly interfaces to ECL, TTL and CMOS based systems □


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    PDF 100MHz MIL-STD-883C dtl58 MIL-STD-883, MIL-M-38510 SX-10D SX30 TA023 SX2X SX10D MLC132

    752 transistor

    Abstract: TRANSISTOR C-111 bux THOMSON
    Text: *BUX 25 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IFF U S E D TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E ^ P r e fe rr e d device D is p o s itif re c o m m a n d é High speed, high voltage,high power transistor Transistor de puissance rapide, hau te tension


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    PDF CB-159 752 transistor TRANSISTOR C-111 bux THOMSON

    bux21

    Abstract: emetteur bux THOMSON P6021 bux 722 JSE10 amplificateur puissance
    Text: *B U X 21 NPN S IL IC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA TR A N S IS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt couran t


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    PDF CB-159 bux21 emetteur bux THOMSON P6021 bux 722 JSE10 amplificateur puissance

    BUX23

    Abstract: transistor 736 736 le Emetteur 100X2 P6021 transistor bux23
    Text: *BUX23 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA TR AN S IS TO R S IL IC IU M NPN„ M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, f o r t c o u ra n t


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    PDF BUX23 CB-159 BUX23 transistor 736 736 le Emetteur 100X2 P6021 transistor bux23