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    TRANSISTOR "MICRO-X" "MARKING" 102 Search Results

    TRANSISTOR "MICRO-X" "MARKING" 102 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR "MICRO-X" "MARKING" 102 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RAYTHEON

    Abstract: RMPA2051 RMPA2051-102 RO4003 Rogers RO4003 mmic marking brown
    Text: Raytheon Raytheon Commercial Electronics RMPA2051-102 3V WCDMA/CDMA2000 Power Amplifier Module The RMPA2051-102 is a small outline, low-profile power amplifier for WCDMA/CDMA2000 applications. The Power Amplifier Module PAM is internally matched to 50 ohms and DC blocked which minimizes the use of


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    RMPA2051-102 WCDMA/CDMA2000 RMPA2051-102 50-ohm RAYTHEON RMPA2051 RO4003 Rogers RO4003 mmic marking brown PDF

    RAYTHEON

    Abstract: RMPA0951-102 RO4003 PA0951
    Text: Raytheon Raytheon Commercial Electronics RMPA0951-102 3V Cellular CDMA Power Amplifier Module The RMPA0951-102 is a dual mode, small outline power amplifier module for Cellular CDMA personal communication system applications. The Power Amplifier Module is internally-matched to 50 ohms and DC blocked which


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    RMPA0951-102 RMPA0951-102 RMPA0951 RAYTHEON RO4003 PA0951 PDF

    STWD100xX

    Abstract: STWD100xP stwd100ny STWD100NPWY3F STWD100xY WNP SOT23-5 JESD97 SC70-5 STWD100 transistor marking WY
    Text: STWD100 Watchdog timer circuit Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip-enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


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    STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 STWD100xX STWD100xP stwd100ny STWD100NPWY3F STWD100xY WNP SOT23-5 JESD97 SC70-5 STWD100 transistor marking WY PDF

    RAYTHEON

    Abstract: RMPA0951-102 RO4003 CMDA
    Text: RMPA0951-102 3V Cellular CDMA Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA0951-102 is a dual mode, small-outline power amplifier module PAM for Cellular CDMA personal communication system applications. The PA is internally-matched to 50 ohms and DC blocked which minimizes the


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    RMPA0951-102 RMPA0951-102 50-ohm RAYTHEON RO4003 CMDA PDF

    STWD100PY

    Abstract: No abstract text available
    Text: STWD100 Watchdog timer circuit Features • Current consumption 10 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


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    STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 STWD100PY PDF

    SOT323-5

    Abstract: No abstract text available
    Text: STWD100 Watchdog timer circuit Datasheet − production data Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


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    STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 SOT323-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: STWD100 Watchdog timer circuit Preliminary Data Features • Current consumption 9 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


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    STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 PDF

    stwd100nywy3f

    Abstract: Reset Circuits ,sot323 STWD100Y
    Text: STWD100 Watchdog timer circuit Datasheet − production data Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


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    STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 OT23-5L OT23-5L stwd100nywy3f Reset Circuits ,sot323 STWD100Y PDF

    stwd100ny

    Abstract: SOT323-5 STWD100NYxxxx STWD100xX STWD100PY wy3f
    Text: STWD100 Watchdog timer circuit Datasheet − production data Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


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    STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 stwd100ny SOT323-5 STWD100NYxxxx STWD100xX STWD100PY wy3f PDF

    Rogers RO4003

    Abstract: PCB Rogers RO4003 RAYTHEON RMPA2051-102 RO4003 1201oc RF power amplifier MHz
    Text: RMPA2051-102 3V WCDMA/CDMA2000 Power Amplifier Module Description Features ADVANCED INFORMATION The RMPA2051-102 is a small outline, power amplifier module PAM for WCDMA and CDMA2000 applications. The Power Amplifier Module (PAM) is internally matched to 50 ohms and DC blocked to minimize the use of


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    RMPA2051-102 WCDMA/CDMA2000 RMPA2051-102 CDMA2000 50-ohm Rogers RO4003 PCB Rogers RO4003 RAYTHEON RO4003 1201oc RF power amplifier MHz PDF

    transistor 2N5401

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2N5401 HDWXUHV • • x • PNP Silicon Through Hole Package 150oC Junction Temperature Case Material: Molded Plastic. UL Flammability


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    2N5401 625mW 150oC transistor 2N5401 PDF

    NCV70522-4

    Abstract: SSOP36-EP transistor marking code WD
    Text: NCV70522DQ Micro-Stepping Motor Driver Introduction The NCV70522DQ is a micro−stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and a SPI interface with an external microcontroller. The NCV70522DQ features an internal current−translation table: it takes the next


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    NCV70522DQ NCV70522DQ/D NCV70522-4 SSOP36-EP transistor marking code WD PDF

    Untitled

    Abstract: No abstract text available
    Text: NCV70522DQ Micro-Stepping Motor Driver Introduction The NCV70522DQ is a micro−stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and a SPI interface with an external microcontroller. The NCV70522DQ features an internal current−translation table: it takes the next


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    NCV70522DQ NCV70522DQ NCV70522DQ/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2N5401 HDWXUHV • • x • PNP Silicon Through Hole Package 150oC Junction Temperature Case Material: Molded Plastic. UL Flammability


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    2N5401 625mW 150oC PDF

    RAYTHEON

    Abstract: RMPA1751-102 RO4003
    Text: RMPA1751-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1751-102 is a small-outline, power amplifier module PAM for Korean-band CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management


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    RMPA1751-102 RMPA1751-102 RAYTHEON RO4003 PDF

    PCB Rogers RO4003

    Abstract: RAYTHEON RMPA1951-102 RO4003 23ACPR
    Text: RMPA1951-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective


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    RMPA1951-102 RMPA1951-102 PCB Rogers RO4003 RAYTHEON RO4003 23ACPR PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2N6388   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant Note1 ("P" Suffix designates


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    2N6388 PDF

    Rogers RO4003

    Abstract: RAYTHEON RMPA1951-102 RO4003 ktc 1950
    Text: RMPA1951-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective


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    RMPA1951-102 RMPA1951-102 Rogers RO4003 RAYTHEON RO4003 ktc 1950 PDF

    da6011

    Abstract: MAS6011 solar cells circuit diagram solar power circuit diagram pin out for gprs wavecom modem SOL 18 package sol 20 Package SOLAR TRANSISTOR SD103A Lithium Battery Protection Circuit for Battery P
    Text: DA6011.000 09 November, 2010 MAS6011 This is advance information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice. Solar Cell System Manager • Power Down Indicator • Low Battery Indicator


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    DA6011 MAS6011 MAS6011 MAS6011AA3Q1306 MAS6011AA3WA300 FI-00380 solar cells circuit diagram solar power circuit diagram pin out for gprs wavecom modem SOL 18 package sol 20 Package SOLAR TRANSISTOR SD103A Lithium Battery Protection Circuit for Battery P PDF

    da6011

    Abstract: solar power circuit diagram solar cells circuit diagram MAS6011 solar cell SOLAR TRANSISTOR LB 1234 SD103A Lithium Battery Protection Circuit for Battery P solar cell control ic
    Text: DA6011.000 15 September 2008 MAS6011 This is advance information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice. Solar Cell System Manager • Power Down Indicator • Low Battery Indicator


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    DA6011 MAS6011 MAS6011 MAS6011AA3Q1306 MAS6011AA3WA300 FIN-02771 solar power circuit diagram solar cells circuit diagram solar cell SOLAR TRANSISTOR LB 1234 SD103A Lithium Battery Protection Circuit for Battery P solar cell control ic PDF

    circuit diagram of a laser lighter

    Abstract: No abstract text available
    Text: 667 FIBER SENSORS Dual Display Digital Pressure Sensor DP-100 SERIES Related Information LASER SENSORS •■General terms and conditions. F-17 ■■SC-SU1. P.917 ■■General precautions. P.1405


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    DP-100 DP-101 SUS303) circuit diagram of a laser lighter PDF

    Untitled

    Abstract: No abstract text available
    Text: AMIS-30542 AMIS-30542 Micro-Stepping Motor Driver Introduction The AMIS−30542 is a micro−stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and a SPI interface with an external microcontroller. It has an on−chip


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    AMIS-30542 AMIS-30542 30542/D PDF

    transistor smd ba rn

    Abstract: LM7805 smd 8 pin transistor smd marking 431 transistor smd code marking 431 LM7805 M SMD lm7805 so8 LM7805 acm SMD Transistor 431 ac transistor 431 smd transistor smd marking ND
    Text: Semiconductor LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized pack­


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    LM431 63Sn/37Pb BPA04XXX MO-211, BPA04AFA transistor smd ba rn LM7805 smd 8 pin transistor smd marking 431 transistor smd code marking 431 LM7805 M SMD lm7805 so8 LM7805 acm SMD Transistor 431 ac transistor 431 smd transistor smd marking ND PDF

    silicon npn planar rf transistor sot 143

    Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
    Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base


    OCR Scan
    BFG10; BFG10/X OT143 7110B2b OT143. 711Dfl2L silicon npn planar rf transistor sot 143 marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor PDF