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    TRANSISTOR -25 F7 Search Results

    TRANSISTOR -25 F7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR -25 F7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FJC690

    Abstract: FJC790
    Text: FJC790 FJC790 Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 Marking: F79 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF FJC790 FJC690 OT-89 FJC690 FJC790

    mosfet power inverter

    Abstract: No abstract text available
    Text: V23990-P622-F74-PM final data sheet flow0 V23990-P622-F74-01-14 Maximum Ratings Parameter P622-F74 600V/30A Condition Symbol Datasheet values Unit max. Transistor H-bridge MOSFET Drain to source voltage 600 V Id 32 A Idpuls 115 A Pulsed drain current Tj=25°C


    Original     		PDF V23990-P622-F74-PM V23990-P622-F74-01-14 P622-F74 00V/30A V23990-P622F74 mosfet power inverter

    J555

    Abstract: 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557
    Text: Databook.fxp 1/13/99 2:09 PM Page F-6 F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor ¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj


    Original     		PDF 2N3954, 2N3955 2N3956 2N3957, 2N3958 2N4220, 2N4220A 2N4221, 2N4221A 2N4338, J555 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557

    Untitled

    Abstract: No abstract text available
    Text: 853 FIBER SENSORS Leak Detection Sensor Amplifier Built-in EX-F70 SERIES EX-F60 SERIES Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~


    Original     		PDF EX-F70 EX-F60 panasonic-electric-wo661 EX-F70/ EX-F60

    F75383

    Abstract: F75393 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta
    Text: F75393 ±1oC Temperature Sensor with ß Compensation Release Date: May, 2008 Revision: V0.16P F75393 F75393 Datasheet Revision History Version Date Page Revision History V0.10P 2007/7/23 - Preliminary Version V0.11P 2007/9/20 - Add register description V0.12P


    Original     		PDF F75393 F75393 F75394 2N3906) 2N3906 2200pF F75383 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta

    EX-F71

    Abstract: EX-F72 EX-F71-PN EX-F62-PN EX-F61-PN transistor a 1413
    Text: EX-F60/70 Photoelectric Sensors Leak Detection Sensor The EX-F70/F60 series of leak detection sensors offer a unique and reliable method of protecting your equipment against leaks. Using a capillary effect, the sensor utilizes the change in refractive index to detect small leaks and viscous liquids. The


    Original     		PDF EX-F60/70 EX-F70/F60 EX-F71 EX-F72 EX-F71-PN EX-F62-PN EX-F61-PN transistor a 1413

    TLN103

    Abstract: TLN108 TPS605LB
    Text: Photo Transistor - F7 Transistor Type Classification Type N a Package S TPS601A TPS604 Metal To-18 TPS614 05 D O O O Electro-optical Characteristics Ta=25“C MIN (MA) 100 SK o TPS610 7 (dge) V ce MAX (V) Vistole Light


    OCR Scan     		PDF TPS601A TPS604 To-18 TPS614 TLN101A TLN102 TLN108 TLN201 TPS610 TPS611 TLN103 TLN108 TPS605LB

    SSTA65

    Abstract: SSTA64
    Text: □IE No. r PNP Darlington TRANSISTOR DIE! No. IMAXIMUM RATINGS TA=25°C Free Air Parameter B— 25 Symbol Value Unit Collector-Emitter Voltage VcEO 30 V Collector-Base Voltage VcBO 40 V Emitter-Base Voltage V ebo 10 V 500 mA Collector Current Continuous


    OCR Scan     		PDF MPSA63\ MPSA64/t 500mW SSTA65 SSTA64

    TLP850

    Abstract: TLP1240 TLP852 TLP851 TLP807 TLP809 TLP8 TLP1225 TLP1230
    Text: F7 Electro-optical Characteristics Ta-25*C Classification Photo Darlington Transistor Output VCE MAX (V) lo MAX (nA) 250 Typ« No. Gap (mm) Slit Width (mm) lF(mA) V ce(V) TLP507A 3 1 30 10 2 30 TLP850 5 1 40 10 2 30 250 TLP851 5 0.5 20 10 2 30 250 MIN TLP852


    OCR Scan     		PDF Ta-25 TLP507A TLP850 TLP851 TLP852 TLP853 TLP862 TLP863 TLP864 TLP865 TLP1240 TLP807 TLP809 TLP8 TLP1225 TLP1230

    transistor QB

    Abstract: No abstract text available
    Text: KSR2104 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor ^ = 4 7 X 1 2 , R2=47Ki2) • Complement to KSR1104 ABSOLUTE MAXIMUM RATINGS (T a=25°C)


    OCR Scan     		PDF KSR2104 47Ki2) KSR1104 OT-23 transistor QB

    Untitled

    Abstract: No abstract text available
    Text: 8550S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: SOT-23 * Complement to 8050S * Collector Current: Ic=-500mA * Collector D issipation: Pc=225mW Ta=25°C ABSOLUTE M AXIMUM R ATINGS a t Tan*-2$ C


    OCR Scan     		PDF 8550S OT-23 8050S -500mA 225mW 300uS, -100uA -50mA

    transistor 2n3704

    Abstract: "Die No." transistor mps3704
    Text: □ IE NO. NPN Medium TRANSISTOR DIE No. •MAXIMUM RATINGS T a= 25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage VcBO 70 V Emitter-Base Voltage V ebo 6 V Parameter D—11 ■ DESCRIPTION Collector Current Continuous


    OCR Scan     		PDF D--11 500mA 250MHz transistor 2n3704 "Die No." transistor mps3704

    Untitled

    Abstract: No abstract text available
    Text: DIE No. r PNP Medium Power TRANSISTOR DIE No. •MAXIMUM RATINGS T a= 25°C Free Air Parameter B—11 ■ DESCRIPTION r Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage VcBO 50 V Emitter-Base Voltage V ebo 6 V 800 mA Collector Current Continuous


    OCR Scan     		PDF B--11 500mA 250MHz 25COLLECTOR

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4253 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE I mm h t i r TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. U nit in mm 2.1 ± 0.1 • Good Linearity of fp- 1 .2 5 ± 0 .1 oo + 1 1 - MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2SC4253 SC-70 501IHz

    T77b

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r e l i m i n a r y speci f i cat i on T r e n c h M O S transistor L o g i c level F E T PHP55N03LT, PHB55N03LT, PHD55N03LT SY M B O L F E A TU R ES QUICK RE FE R E N C E DATA V dss - 25 V • ’Trench’ technology


    OCR Scan     		PDF PHP55N03LT, PHB55N03LT, PHD55N03LT T77b

    ON586

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r e l i m i n a r y speci f i cat i on T r e n c h M O S transistor Logic level FET SY M B O L F E A TU R ES • • • • • • PHP87N03LT, PHB87N03LT QUICK RE FE R E N C E DATA Vdss - 25 V ’T rench’ technology


    OCR Scan     		PDF PHP87N03LT, PHB87N03LT ON586

    transistor bl 187

    Abstract: yl1 TRANSISTOR f748 transistor ac 132 BF748
    Text: Produc^jæcification Philips Semiconductors BF748 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL IPHIN 711062b 0044^71 S7T SbE PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance


    OCR Scan     		PDF BF748 711062b transistor bl 187 yl1 TRANSISTOR f748 transistor ac 132 BF748

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b b 5 3 c]31 0031082 842 M A P X Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 btt » “ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance


    OCR Scan     		PDF bb53c BF748

    transistor motorola 114-8

    Abstract: 552 MOSFET TRANSISTOR motorola 552 transistor motorola s7p03
    Text: M O TO RO LA Order this document by MMSF7P03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F7P 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET


    OCR Scan     		PDF MMSF7P03HD/D MMSF7P03HD transistor motorola 114-8 552 MOSFET TRANSISTOR motorola 552 transistor motorola s7p03

    bl 565 transistor

    Abstract: BF748 f748 IEC134 702 y TRANSISTOR aC/DC/cpu 224 aC/DC/f748
    Text: Philips Semiconductors bbsa^l 0031005 Ö42 • APX Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 U'lE 3>“ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance


    OCR Scan     		PDF BF748 bl 565 transistor BF748 f748 IEC134 702 y TRANSISTOR aC/DC/cpu 224 aC/DC/f748

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMSF7P03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F7P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 30 VOLTS


    OCR Scan     		PDF MMSF7P03HD/D b3b7255

    MC 931 transistor

    Abstract: S7N03
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M M S F7N 03H D Medium Power Surface Mount Products M o to ro la P re fe rre d D e v ic e TMOS Single N-Channel Field Effect Transistors M iniM O S'" devices are an advanced series of power MOSFETs


    OCR Scan     		PDF SF7N03HD 0E-05 0E-01 MC 931 transistor S7N03

    TLRA280

    Abstract: TLP1007A TLRC280
    Text: Photo interrupters P hoto IC O utput F7 Electro-optical Characteristics (Ta=25°C) Classification Photo IC Output Type No. Output Level (With Light) TLP1000A “H” TLP1001A “L" TLP1002A “H” TLP1003A “L” TLP1004A “H” TLP1005A “L” TLP1006A


    OCR Scan     		PDF TLP1000A TLP1001A TLP1002A TLP1003A TLP1004A TLP1005A TLP1006A TLP1007A TLP1014 TLP1015 TLRA280 TLRC280

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y ^ $ / T ransistors g 2 Q 1 2 2 8 M e 1 ^ u N P N ^ 1 3 > h ^ > 7 * rfjiE S /D im e n sio n s Unit : mm t t * 1) VCE ( sa. is ^ 7 Epitaxial Planar NPN Silicon Transistor Power Amp. Z S D Io O O • 2SD1228M/2SD1860 X -f7 f iz'iM b X o 9 0 m V (T y p .) ( I c = 1 5 0 m A l B = 1 5 m A )


    OCR Scan     		PDF 2SD1228M/2SD1860 150mV