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    TRANSISTOR 03E Search Results

    TRANSISTOR 03E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 03E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10160-001

    Abstract: std motor G3202 00002EE0 g3425
    Text: HIGH PERFORMANCE TRANSISTOR INVERTER TRUE TORQUE CONTROL DRIVE SERIES PROFIBUS-DP COMMUNICATIONS INTERFACE December, 1998 ICC #10160-001 Introduction Thank you for purchasing the “Profibus-DP Communications Interface” for the Toshiba TOSVERT-130 G3 High-Performance Transistor Inverter. Before using the


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    PDF OSVERT-130 10160-001 std motor G3202 00002EE0 g3425

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904ZW 200 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free WBFBP-03E FEATURES Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION


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    PDF MMBT3904ZW WBFBP-03E 200mA WBFBP03E 45REF. 50REF. 13-Dec-2013 100MHz

    LM 3041

    Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
    Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.


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    PDF 2N326 5961-0021-s) LM 3041 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076

    Untitled

    Abstract: No abstract text available
    Text: NON-ISOLATED DC/DC CONVERTERS 4.5 Vdc - 14 Vdc Input, 0.59 Vdc - 5.5 Vdc /3 A Outputs Bel Power, Inc. , a subsidiary of Bel Fuse, Inc. October 8, 2009 SLIN-03E2Ax RoHS Compliant Rev.D Features • Wide Input Voltage Range • Ability to Sink and Source Current


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    PDF SLIN-03E2Ax IPC-9592) 2002/95/EC 60950-riski 2002/95/EC, notice10/08/09

    SLIN-03E2A0

    Abstract: murata GRM MTBF
    Text: NON-ISOLATED DC/DC CONVERTERS 4.5 Vdc - 14 Vdc Input, 0.59 Vdc - 5.5 Vdc /3 A Outputs Bel Power, Inc. , a subsidiary of Bel Fuse, Inc. December 3, 2010 SLIN-03E2Ax RoHS Compliant Rev.F Features • Wide Input Voltage Range • Ability to Sink and Source Current


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    PDF SLIN-03E2Ax IPC-9592) 2002/95/EC 60950page 2002/95/EC, SLIN-03E2A0 murata GRM MTBF

    Untitled

    Abstract: No abstract text available
    Text: NON-ISOLATED DC/DC CONVERTERS 4.5 Vdc - 14 Vdc Input, 0.59 Vdc - 5.5 Vdc /3 A Outputs Bel Power, Inc. , a subsidiary of Bel Fuse, Inc. October 8, 2009 SLIN-03E1Ax RoHS Compliant Rev.D Features • Wide Input Voltage Range • Ability to Sink and Source Current


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    PDF SLIN-03E1Ax IPC-9592) 2002/95/EC 2002/95/EC,

    "Pin compatible" TDK

    Abstract: No abstract text available
    Text: NON-ISOLATED DC/DC CONVERTERS 4.5 Vdc - 14 Vdc Input, 0.59 Vdc - 5.5 Vdc /3 A Outputs Bel Power, Inc. , a subsidiary of Bel Fuse, Inc. December 3, 2010 SLIN-03E1Ax RoHS Compliant Rev.F Features • Wide Input Voltage Range • Ability to Sink and Source Current


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    PDF SLIN-03E1Ax IPC-9592) 2002/95/EC 2002/95/EC, "Pin compatible" TDK

    FX0-14MR-ES

    Abstract: FR-U120 A1SY10 FXON-40MR-ES A1SX81 FX-48MR mitsubishi plc FX SERIES mitsubishi Fx 40mr cable MELSEC FX-32MR PLC mitsubishi plc fx 16mr
    Text: Issued March 1997 232-5834 Data Pack D Data Sheet RS Mitsubishi cross reference numbers Programmable logic controllers PLCs FX0 PLC system Product Micro PLC ac powered Micro PLC dc powered Programming cables Micro PLC starter kit ‘Pro-pack’ Data access unit


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    PDF FX0-14MR FX0-20MR FX0-30MR FX0-20P-CAB0 FX0-14MR-ES FX0-20MR-ES FX0-30MR-ES FX0-14MR-DS FX0-20MR-DS FX0-30MR-DS FX0-14MR-ES FR-U120 A1SY10 FXON-40MR-ES A1SX81 FX-48MR mitsubishi plc FX SERIES mitsubishi Fx 40mr cable MELSEC FX-32MR PLC mitsubishi plc fx 16mr

    A1SX42

    Abstract: A1SY10 FX0-14MR-ES MELSEC FX-32MR PLC F1 60mr programming manual mitsubishi plc cable fx series FXon 60MR A1SX81 mitsubishi Fx 24mr cable FX-32MR
    Text: Issued March 1996 021-120 Data Pack D Data Sheet RS Mitsubishi cross reference numbers Programmable logic controllers PLCs FX0 PLC system Product Micro PLC ac powered Micro PLC dc powered Programming cables Micro PLC starter kit ‘Pro-pack’ Data access unit


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    PDF FX0-14MR FX0-20MR FX0-30MR FX0-20P-CAB0 FX0-14MR-ES FX0-20MR-ES FX0-30MR-ES FX0-14MR-DS FX0-20MR-DS FX0-30MR-DS A1SX42 A1SY10 FX0-14MR-ES MELSEC FX-32MR PLC F1 60mr programming manual mitsubishi plc cable fx series FXon 60MR A1SX81 mitsubishi Fx 24mr cable FX-32MR

    OF4455

    Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
    Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


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    PDF Code357A3 30-Jun-04 VY27357A3 OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P

    CP1W-DA021

    Abstract: 2 digit storm distance counter manual CP1W-AD041 cp1w 40edr analog input cp1w-ad041 programming manual CP1W-40EDR
    Text: CP series CP1L CPU Unit CP1L-EM@@D@-D/CP1L-EL@@D@-D CP1L-M@@DR-A/CP1L-L@@DR-A High Performing Programmable Controller with Embedded Ethernet • "CP1L-EM" and "CP1L-EL" has a standard-feature Ethernet port. • "CP1L-M" and "CP1L-L" has a standard-feature peripheral USB port.


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    PDF P72I-E-02 CP1W-DA021 2 digit storm distance counter manual CP1W-AD041 cp1w 40edr analog input cp1w-ad041 programming manual CP1W-40EDR

    1BW TRANSISTOR

    Abstract: F400R12KF
    Text: * 7 ^ 3 9 - 3 / F 40 0R 1 2K F ’ EU P E C S5E D • 3M 03ET7 b3T ■ UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module 0,052 RthJC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte


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    PDF F400R12KF 3M03ET7 00002b2 34D32CI7 1BW TRANSISTOR F400R12KF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ


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    PDF MAT03

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SK2545 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2545 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm 1 0 Í0 .3


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    PDF 2SK2545 100/iA

    iw 1688

    Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
    Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency


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    PDF GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331

    OC26 transistor

    Abstract: 2N301 2n1303 OC28 2N388A 2N1010 2N1304 2n1304 transistor OC36 transistor AUY29
    Text: 0DQD14E S I T 3 3 -0 e! DIODE TRANSISTOR CQ.1 \IC. GERMANIUM NPN LOW POWER TRANSISTORS DEVICES PKG (201 686-0400 • Tb Ioxl 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561 hAA FAX NO. No. 2U1-S7!>-58e3 201*575*5863 _ 2N35 2N78 2N94 2N97 2N98


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    PDF TbIoxl139-385 2N103 2N124 2N125 2N212 2N213 2N214 2N228 2N229 2N333 OC26 transistor 2N301 2n1303 OC28 2N388A 2N1010 2N1304 2n1304 transistor OC36 transistor AUY29

    OC26 transistor

    Abstract: 2N301 OC30 OC26 2n2430 OC36 transistor 2N1010 OC25 germanium transistors NPN t01 transistor
    Text: 0DQD14E S I T 3 3 -0 e! DIODE TRANSISTOR CQ.1 \IC. GERMANIUM NPN LOW POWER TRANSISTORS DEVICES PKG (201 686-0400 • Tb Ioxl 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561 hAA FAX NO. No. 2U1-S7!>-58e3 201*575*5863 _ 2N35 2N78 2N94 2N97 2N98


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    PDF TbIoxl139-385 2N103 2N124 2N125 2N212 2N213 2N214 2N228 2N229 2N333 OC26 transistor 2N301 OC30 OC26 2n2430 OC36 transistor 2N1010 OC25 germanium transistors NPN t01 transistor

    TC518512AF

    Abstract: C701 T
    Text: TOSHIBA TC518512AF/AFT-70V,-80V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


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    PDF TC518512AF/AFT-70V 288-WORD TC518512AF/TC518512AFT 304-bit TC518512AF/AFT 32-pin 525-inchELF OP32-P-525-1 TC518512AF/AFT-70 TC518512AF C701 T

    2SA1610

    Abstract: l 0734 2SC4176 L0734 846 B34 t460 transistor
    Text: SEC '> • ; = ] > l * 7 > Silicon Transistor lÏ T / \ f 7 2SC4176 « it : mm O X - i -y •f- > ? " i Î ) £ * i i â v > c, O 1 ? 2.1+0.1 ;7 tâ fP 1 iC rE * i ' j ' ? 1.25 ±0.1 O ÎIJ Îf ^ lp If i^ ë ^ o o 2SA 1610 £ 3 > 7 ° I) / > ? U tM È ffl-ü ë i t o


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    PDF 2SC4176 2SA1610 l 0734 L0734 846 B34 t460 transistor

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


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    PDF 23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A

    A1306 TRANSISTOR

    Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
    Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)


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    PDF O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor

    transistor ZTX108

    Abstract: ztx302 ztx301
    Text: ZETEX SEMICONDUCTORS 03E D • Eiei7DS7fl QODbaiE 1 ■ ZETB E-LINE SPECIFICATIONS The devices shown on this page are general purpose transistors designed for small signal amplification from d.c. to radio frequencies. Typical application areas include: T 'L V 'U


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    PDF BC556P ZTX504 SO-95 BS3934 SO-94 SO-96 SO-97 TQ-202 transistor ZTX108 ztx302 ztx301

    Untitled

    Abstract: No abstract text available
    Text: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6


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    PDF DQ114TM

    TTL LS 7400

    Abstract: ttl 7400 marking WV1 transistor TTL 7400 national semiconductor 74H Logic Family Specifications IC 7400 nand gate MIL-STD-806B LS TTL family characteristics transistor f259 internal structure 74LS00 nand gate
    Text: Introduction National Semiconductor Introduction FAST, an acronymn for Fairchild Advanced Schottky TTL, is a high-speed, low-power logic family that achieves speeds typically 30% faster than the Schottky family with a corre­ sponding power reduction of approximately 75%. It is fabri­


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