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    TRANSISTOR 100N Search Results

    TRANSISTOR 100N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 100N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RB521S-30

    Abstract: UML12N
    Text: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode


    Original     		PDF UML12N 2SC4617and RB521S-30 SC-88A UML12N

    MARKING L12

    Abstract: RB521S-30 UML12N
    Text: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode


    Original     		PDF UML12N 2SC4617and RB521S-30 SC-88A 32MHZ MARKING L12 UML12N

    2SA2018

    Abstract: RB521S-30 2SA20
    Text: UML6N Transistors General purpose transistor isolated transistor and diode UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. 1.3 2.0 0.65 0.65 0.9 (1) (5) 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode


    Original     		PDF 2SA2018 RB521S-30 SC-88A 2SA20

    BJT IC Vce

    Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E
    Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with


    Original     		PDF HFA3134 MM3134 HFA3134, BJT IC Vce NPN Transistor Pair npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E

    HFA3134

    Abstract: npn 8 transistor array
    Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model TM Application Note June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with


    Original     		PDF HFA3134 MM3134 HFA3134, npn 8 transistor array

    DRF1601

    Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
    Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF DRF1601 DRF1601 OT-223 900MHz 100nF 100pF smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER

    smd transistor k 1540

    Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
    Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


    Original     		PDF DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734

    5962F0721805VXC

    Abstract: No abstract text available
    Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH ISL73096, ISL73127 ISL73128 ISL73096 5962F0721805VXC

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2sa1929

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for


    OCR Scan     		PDF 2SA1929 2SA1929 -100V 300mA, 100Hz) 110mV 270Hz X10-3

    IGT6D21

    Abstract: IGT6E21
    Text: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high


    OCR Scan     		PDF IGT6D21 -f--10% IGT6E21

    K105 transistor

    Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
    Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT4D11 K105 transistor transistor k105 IGT4E11 IGT-4E11

    Untitled

    Abstract: No abstract text available
    Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets


    OCR Scan     		PDF 235b05 G0G4352 Q62702-D1068

    2sa 940

    Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
    Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are


    OCR Scan     		PDF 2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu

    transistor BD 424

    Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202
    Text: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets


    OCR Scan     		PDF 235b05 G0G4352 Q62702-D1068 QDQ43SM BD424 transistor BD 424 a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202

    UTC 7312

    Abstract: BUX 88 S BUX11 bux THOMSON BUX 115 BUX11N TRANSISTOR -R7t
    Text: *BUX 11N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E Preferred device D is p o s itif recommandé High speed, high current, high power transistor Transistor de puissance rapide, f o r t couran t 160 V


    OCR Scan     		PDF CB-19 UTC 7312 BUX 88 S BUX11 bux THOMSON BUX 115 BUX11N TRANSISTOR -R7t

    Untitled

    Abstract: No abstract text available
    Text: HFA3102 Semiconductor Dual Long-Tailed Pair Transistor Array August 1996 Description Features High Gain-Bandwidth Product fy . . . . 10GHz High Power Gain-Bandwidth Product . . 5GHz High Current Gain (h p ^ ). 70 Noise Figure (Transistor).


    OCR Scan     		PDF HFA3102 10GHz HFA3102 10GHz) 1340nm 1320nm 1320um

    2SC2320L

    Abstract: h a 431 transistor RO10K
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX


    OCR Scan     		PDF 2SC2320L 2SC2320L 100nnA, NVS150mV SC-43 270Hz h a 431 transistor RO10K

    Untitled

    Abstract: No abstract text available
    Text: Central CZT2000 Sam lcoitductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,


    OCR Scan     		PDF CZT2000 OT-223 25piA 16OmA, 160mA 100nA 160mA

    UN 2911

    Abstract: No abstract text available
    Text: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 UN 2911

    transistor amplifier 5v to 6v

    Abstract: transistor 2sA1015 2sa1015 Audio Frequency General Purpose Amplifier 2sa1015 transistor l00mA
    Text: PNP SILICON TRANSISTOR TO-92B 2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2SA1015 O-92B 400mW 100mA l00mA 100nA 300ms, Boxi9477, transistor amplifier 5v to 6v transistor 2sA1015 Audio Frequency General Purpose Amplifier 2sa1015 transistor

    CZT5401

    Abstract: No abstract text available
    Text: Central CZT5401 Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.


    OCR Scan     		PDF CZT5401 OT-223 TheCENTRALSEMICONDUCTORCZT5401 100MHz

    transistor 2SA673

    Abstract: TRANSISTOR BO 341 MICRO ELECTRONICS ltd transistor 2SA673 400MW
    Text: 2SA673 SILICON TRANSISTOR 2SA673 is PNP silicon epitdxial transistor design for medium power amplifiers and switching applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO Collector Current


    OCR Scan     		PDF 2SA673 500mA 400mW 100mA l00nA transistor 2SA673 TRANSISTOR BO 341 MICRO ELECTRONICS ltd transistor