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    TRANSISTOR 1012 TO-3 PACKAGE Search Results

    TRANSISTOR 1012 TO-3 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1012 TO-3 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 1012

    Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220

    transistor 1012 F

    Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
    Text:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 F transistor 1012 CSA1012 1012 transistor 1012 npn

    2SC3089

    Abstract: en1012a EN10-12 high voltage fast switching npn 4A
    Text: Ordering number:EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3089] 1 : Base


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    PDF EN1012A 2SC3089 00V/7A VCBO800V) 2SC3089] PW300 Cycle10% 2SC3089 en1012a EN10-12 high voltage fast switching npn 4A

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    Abstract: No abstract text available
    Text: Ordering number:ENN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3089] 15.6


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    PDF ENN1012A 2SC3089 00V/7A VCBO800V) 2SC3089] PW300 Cycle10%

    Transistor AND DIODE Equivalent list

    Abstract: 100-OHM 1084 transistor TO-78 package
    Text: ISOCOM LTD CS 102 Gallium Arsenide Optocoupler in a TO-78 Package Isocom Ltd supplies high reliability devices for applications requiring an operating temperature range of -55°C to +125°C e.g. military applications . Devices supplied are approved to BS9400, and have


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    PDF BS9400, BS9000 1294/M) CECC20000 M/1084/CECC/UK) BS9000 100ohm Transistor AND DIODE Equivalent list 100-OHM 1084 transistor TO-78 package

    transistor 1012

    Abstract: cs-102
    Text: CS 102 Gallium Arsenide Optocoupler in a TO-78 Package Isocom Ltd supplies high reliability devices for applications requiring an operating temperature range of -55°C to +125°C e.g. military applications . Devices supplied are approved to BS9400, and have


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    PDF BS9400, BS9000 1294/M) CECC20000 M/1084/CECC/UK) BS9000 100ohm transistor 1012 cs-102

    TRANSISTOR c 5521

    Abstract: 1000C 2600C ISQ204-77 1012 transistor
    Text: ISQ204-77 OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT SCHEMATIC PACKAGE DIMENSIONS INCHES MM 1 16 2 15 3 14 20.32 19.32 7.62 4.0 3.0 0.5 13 0 max 3.0 4 13 0.5 3.35 0.26 2.54 5 12 6 11 7 10 8 7.0 6.0 9 1.2 DESCRIPTION OUTPUT TRANSISTOR The ISQ204-77 are optically coupled isolators


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    PDF ISQ204-77 ISQ204-77 16-pin 150mW DA92496-AAS/01 TRANSISTOR c 5521 1000C 2600C 1012 transistor

    Untitled

    Abstract: No abstract text available
    Text: 4N45 LOW INPUT CURRENT HIGH GAIN OPTOCOUPLERS PACKAGES ISOCOM LTD CIRCUIT 7.30 7.30 3.50 6.50 13.0o 0.4 3.0 2.7 0.26 6.5 7.62 1.20 2.54 0.5 13.0o DESCRIPTION The 4N45 is an optically coupled isolator. It consists of a Gallium Arsenide infrared emitting diode and


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    Untitled

    Abstract: No abstract text available
    Text: 4N46 LOW INPUT CURRENT HIGH GAIN OPTOCOUPLERS PACKAGES ISOCOM LTD CIRCUIT 7.30 7.30 3.50 6.50 13.0o 0.4 3.0 2.7 0.26 6.5 7.62 1.20 2.54 0.5 13.0o DESCRIPTION The 4N46 is an optically coupled isolator. It consists of a Gallium Arsenide infrared emitting diode and


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    RJ23N3AA0PT

    Abstract: 623H RJ23N3
    Text: BACK RJ23N3AA0PT 1/2.7-type Interline Color CCD Area Sensor with 2 140 k Pixels RJ23N3AA0PT • Package : 16-pin shrink-pitch DIP [Plastic] P-DIP016-0500C Row space : 12.70 mm DESCRIPTION The RJ23N3AA0PT is a 1/2.7-type (6.65 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With


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    PDF RJ23N3AA0PT 16-pin P-DIP016-0500C) RJ23N3AA0PT 623H RJ23N3

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR OPTOCOUPLERS ISOCOM TIL191-71G 4 4.60 0.4 3.00 2 LTD PACKAGE 10.16 6.50 3 3.50 1 2.70 0.25 10-12 1.20 2.54 0.5 DESCRIPTION These devices are single, optocouplers. Composed of a Gallium Arsenide infra-red emitting diode and a silicon phototransistor. Package styles for these devices include 4 pin, gull wing options.


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    PDF TIL191-71G

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR OPTOCOUPLERS ISOCOM TIL191-11G 4 4.60 0.4 3.00 2 LTD PACKAGE 10.16 6.50 3 3.50 1 2.70 0.25 10-12 1.20 2.54 0.5 DESCRIPTION These devices are single, optocouplers. Composed of a Gallium Arsenide infra-red emitting diode and a silicon phototransistor. Package styles for these devices include 4 pin, gull wing options.


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    PDF TIL191-11G

    NTE3083

    Abstract: 3550VDC
    Text: NTE3083 Optoisolator NPN Darlington Transistor Output Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate


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    PDF NTE3083 NTE3083 3550VDC, 10sec) 3550VDC

    TSSO28

    Abstract: transistor 3006 TUA 6010 XS tv 6110 BB535 ALL BAND TV TUNER pin TUA6010XS
    Text: APPLICATIONS ICs for Consumer Electronics Rolf Laurien New tuner ICs TUA 6010/6110: One-chip solutions for slimline tuners Tuners for television sets, video recorders and satellite receivers have become progressively smaller in recent years. Most recently, the


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    PDF 6010X TSSO28 transistor 3006 TUA 6010 XS tv 6110 BB535 ALL BAND TV TUNER pin TUA6010XS

    op amp ad645

    Abstract: AD645AH analog devices AD METALIZATION PHOTOGRAPH AD645BH
    Text: Low Noise, Low Drift FET Op Amp ANALOG DEVICES AD645 CONNECTION DIAGRAMS TO-99 H Package 8-Pin Plastic Mini-DIP (N) Package . CASE FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 i*V p-p max, 0.1 Hz to 10 Hz 10 hV/VHz max at 10 kHz


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    PDF OPA-111 OPA-121 AD645 AD645 op amp ad645 AD645AH analog devices AD METALIZATION PHOTOGRAPH AD645BH

    DARLINGTON TRANSISTOR ARRAYS 2A

    Abstract: PU4422 PU3122 PU4122
    Text: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B


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    PDF PU3122, PU4122, PU4422 200mJ PU3122: PU4122: DARLINGTON TRANSISTOR ARRAYS 2A PU4422 PU3122 PU4122

    2N918

    Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
    Text: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574


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    PDF BAM20 22N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N918 SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544

    Untitled

    Abstract: No abstract text available
    Text: 66099 mu R A D IA TIO N T O L E R A N T O PTO C O U PLER OPTOELECTRONIC PRODUCTS DIVISION The collector is electrically connected to the case, Features c Meets or Exceeds M IL-S-19500 Radiation Requirements Current Transfer Ratio - 1 5 0% Typical 1000 Volts Electrical Isolation


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    PDF IL-S-19500 T4T70T MIL-S-19500)

    TRANSISTOR 1015A

    Abstract: N1033A n1033 transistor lrw N1013A N1027A N1004A N1011A
    Text: 1 SIG N ETIC S D IG IT A L 1.000/10,000 S E R IE S ECL FU N C TIO N 2 O R Outputs w/Pulldowns _ _ _ . . 2 NOR Outputs w/Pulldowns P A R T NO. io to + ? r o P R O P A G A T IO N T O T A L POWER LO A D IN G D ELA Y D ISSIPA TIO N FAC TO R ruec typ. mW typ.


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    PDF N1013A N1027A N1033A 1039B TRANSISTOR 1015A n1033 transistor lrw N1004A N1011A

    HBF4011AE

    Abstract: 4007ae HBF4001AE HBF4002AE 34706C HBF4027AE power transistor e27 HBF4013A mos inverter 4007A
    Text: SGS-ATES Semiconductors Digital I.C .'s-C O S/ M O S Integrated Circuits -C O S /M O S HBF4000AE Series FEATURES Very low power dissipation: 10 nW typ./gate package Equivalent to R CA CD40Q0AE series 10 ,xWty p./MSI DESCRIPTION The HBF4000AE series is a complementary N and


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    PDF HBF4000AE CD4000AE HBF4051 34721E HBF4052AE 34722C HBF4053AE 4723A HBF4055AE HBF4011AE 4007ae HBF4001AE HBF4002AE 34706C HBF4027AE power transistor e27 HBF4013A mos inverter 4007A

    4011AE

    Abstract: 4009A 4009ae HBF4011AE HBF4017AE hbf4049 HBF4049AE hbf4001 HBF4016AE CD4000AE
    Text: SGS-ATES Semiconductors Digital I.C .'s-C O S /M O S Integrated Circuits -C O S /M O S HBF4000AE Series FEATURES V ery low pow er dissipation: 10 n W typ./gate package Equivalent to R C A CD40Q0AE series 10 ,xW ty p./MSI D E S C R IP T IO N T h e H B F4000 A E series is a complementary N and


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    PDF HBF4000AE CD4000AE 34368G HBF4051 34721E HBF4052AE 34722C HBF4053AE 4723A 4011AE 4009A 4009ae HBF4011AE HBF4017AE hbf4049 HBF4049AE hbf4001 HBF4016AE

    C1685 transistor

    Abstract: TRANSISTOR C1685 C2091 C1685 C1685 R transistor
    Text: a fe ., DUAL PHOTOTRANSISTOR OPTOCOUPLERS s» OPTOELECTRONICS MCT6 MCT62 MCT61 PACKAGE DIMENSIONS DESCRIPTION The MCT6X optoisolators have tw o channels for high density applications. For four channel applications, tw o-packages fit into a standard 16-pin DIP socket. Each


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    PDF MCT62 MCT61 16-pin E50151 C1685 C1296A MCT61 MCT62 C1685 transistor TRANSISTOR C1685 C2091 C1685 C1685 R transistor

    p 621 Opto coupler

    Abstract: optocoupler 621
    Text: SFH601 » •— Infineon TRIOS Phototransistor Optocoupler technologies DESCRIPTION The SFH601 is an optocoupler with a Gallium Ars­ enide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case


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    PDF SFH601 SFH601-2, SFH601-3 E52744 SFH601 SFH601-4 1-888-Inf p 621 Opto coupler optocoupler 621

    Untitled

    Abstract: No abstract text available
    Text: E DUAL 1 I PHOTOTRANSISTOR OPTOCOUPLERS -1 U OPTOELECTRONICS MCT6 MCT62 MCT61 PACKAGE DIMENSIONS ft F ft & DESCRIPTION The MCT6X optoisolators have two channels for high density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each


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    PDF MCT62 MCT61 16-pin E50151 74bbfl51