TRANSISTOR 1117 Search Results

TRANSISTOR 1117 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 1117 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PBSS9110T Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Preliminary specification 2003 Jul 28 Philips Semiconductors Preliminary specification 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T FEATURES	Original	M3D088 PBSS8110T SCA75 613514/01/pp7 PBSS9110T	PDF
PBSS9110T Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS9110T 100 V, 1A PNP low VCEsat BISS transistor Product specification 2004 Feb 18 Philips Semiconductors Product specification 100 V, 1A PNP low VCEsat (BISS) transistor PBSS9110T FEATURES QUICK REFERENCE DATA	Original	M3D088 PBSS9110T SCA76 R75/01/pp10	PDF
free transistor equivalent book Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V; 1 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 60 V; 1 A NPN low VCEsat (BISS) transistor PBSS4160T FEATURES QUICK REFERENCE DATA	Original	M3D088 PBSS4160T SCA75 613514/01/pp12 free transistor equivalent book	PDF
free transistor equivalent book Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5160T 60 V; 1 A PNP low VCEsat BISS transistor Product specification 2003 Jun 23 Philips Semiconductors Product specification 60 V; 1 A PNP low VCEsat (BISS) transistor PBSS5160T FEATURES QUICK REFERENCE DATA	Original	M3D088 PBSS5160T SCA75 613514/01/pp12 free transistor equivalent book	PDF
diagram LG LCD TV circuits Abstract: schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For LCD TV / Monitor http://www.keccorp.com Sales Engineering G 2006. 04. REV 3.31 First & Best KEC Products Line up for LCD TV & MNT IC’s Discrete Transistor G/P Transistor Power Regulator Management	Original	OD-523 OD-323 OD323-2-1 SC-76) OD-123FL OT-723 OT-23 OT-89 diagram LG LCD TV circuits schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic	PDF
UN1114 Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118 Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●	Original	111D/111E/111F/111H/111L UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1114 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
1117 S Transistor Abstract: No abstract text available Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP6N60E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable	OCR Scan	PHP6N60E PHX4N60E -SOT186A 1117 S Transistor	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP6N60E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channe! enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable	OCR Scan	PHP6N60E PHX4N60E OT186A	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
gis 110 kv Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	OCR Scan	BUK9518-55 T0220AB gis 110 kv	PDF

transistor tt 2222 Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56 Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran	OCR Scan	LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56	PDF
D40N1 Abstract: D40N5 D40N D40N4 D40N3 D40N2 D40N1.2 TRANSISTOR regulator k023 D40N12 Text: Silicon Power Tab Transistors High Voltage Video Output Transistor The E>40N is a silicone plastic encapsulated power transistor for TV video and color output stages. Other TV and general applications include: 1 Drive for the TV horizontal sweep tube;. (2) Audio output stage for portable TV	OCR Scan	-si5-x45" -215x45Â D40N1 D40N5 D40N D40N4 D40N3 D40N2 D40N1.2 TRANSISTOR regulator k023 D40N12	PDF
1117 S Transistor Abstract: BFR101B BFR101A Text: 711002b D0bTlb4 435 • PHIN BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed prim arily fo r use as a source follow er w ith the input protected against successive voltage surges by a forward and reverse integrated	OCR Scan	711002b BFR101A BFR101B BFR101A 1117 S Transistor BFR101B	PDF
Untitled Abstract: No abstract text available Text: CSA940, CSC2073 CSA940 CSC2073 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications DIM A 8 C E F G H J K L M N MIN MAX 14.42 9,63 3,56 16.51 10.67 4.83 0.90 1,15 1.40 3.75 3,88 2.29 2.79 2,54	OCR Scan	CSA940, CSC2073 CSA940 00OilIB	PDF
MRB11175Y Abstract: T-31-21 A 3121 IC FO-67 Text: MRB11175Y PHILIPS INTERNATIONAL SbE D 711002b D04t33G 3Mb H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor intended fo r use in m ilita ry and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications at 1.09 GHz.	OCR Scan	MRB11175Y 711062b D04b330 FO-67 MRB11175Y 711005b. 004b333 T-31-21 A 3121 IC	PDF
1117 S Transistor Abstract: sot122f Text: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,	OCR Scan	BLY91C/01 OT122F OT122F_ 1117 S Transistor sot122f	PDF
transistor d 1991 ar Abstract: No abstract text available Text: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,	OCR Scan	BLY91C/01 T122F1 OT122F bb53131 transistor d 1991 ar	PDF
BFR101A Abstract: BFR101 BFR101B Text: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source	OCR Scan	bb53T31 251ciÃ BFR101A BFR101B BFR101 BFR101A BFR101B	PDF
1117 S 3,3 Transistor Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345 Text: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .	OCR Scan	TA75W 1117 S 3,3 Transistor Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345	PDF
QM300HA-2H Abstract: QM300H Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2HB lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized	OCR Scan	QM300HA-2HB E80276 E80271 QM300HA-2H QM300H	PDF

TRANSISTOR 1117 Search Results

TRANSISTOR 1117 Result Highlights (5)

TRANSISTOR 1117 Datasheets Context Search

PBSS9110T

PBSS9110T

free transistor equivalent book

free transistor equivalent book

diagram LG LCD TV circuits

UN1114

2sb504

1117 S Transistor

Untitled

2N2222A 338

y51 h 120c

sx3704

RCA H 541

gis 110 kv

transistor tt 2222

D40N1

1117 S Transistor

Untitled

MRB11175Y

1117 S Transistor

transistor d 1991 ar

BFR101A

1117 S 3,3 Transistor

QM300HA-2H