Untitled
Abstract: No abstract text available
Text: MPS6729 Preferred Device One Watt Amplifier Transistor PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −80 Vdc Collector −Base Voltage VCBO −80 Vdc Emitter −Base Voltage VEBO −4.0
|
Original
|
MPS6729
O-226)
MPSW55
MPSW56
|
PDF
|
EB209
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband
|
Original
|
MRF1550T1
AN215A,
EB209
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
|
Original
|
MRF1535T1
AN215A,
|
PDF
|
MRF1550
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
|
Original
|
MRF1550T1
AN215A,
MRF1550
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband
|
Original
|
MRF1535T1
AN215A,
|
PDF
|
sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
|
Original
|
Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
|
Original
|
MRF1535T1/D
MRF1535T1
|
PDF
|
FERROXCUBE VK200
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband
|
Original
|
MRF1535T1/D
MRF1535T1
MRF1535T1/D
FERROXCUBE VK200
|
PDF
|
EB209
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband
|
Original
|
MRF1550T1/D
MRF1550T1
MRF1550T1/D
EB209
|
PDF
|
AN4005
Abstract: A05T AN211A AN215A AN721 MRF1535T1 VK200 capacitor 475
Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
|
Original
|
MRF1535T1/D
MRF1535T1
MRF1535T1
AN4005
A05T
AN211A
AN215A
AN721
VK200
capacitor 475
|
PDF
|
"RF power MOSFETs"
Abstract: AN4005 AN721 MRF1550T1 VK200 A05T AN211A AN215A
Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
|
Original
|
MRF1550T1/D
MRF1550T1
MRF1550T1
"RF power MOSFETs"
AN4005
AN721
VK200
A05T
AN211A
AN215A
|
PDF
|
L5N1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
|
Original
|
MRF1535T1/D
MRF1535T1
L5N1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
|
Original
|
MRF1550T1/D
MRF1550T1
|
PDF
|
CEM4431
Abstract: No abstract text available
Text: CEM4431 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.8A, RDS ON = 40mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
|
Original
|
CEM4431
CEM4431
|
PDF
|
|
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
|
PDF
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
PDF
|
NTE7493A
Abstract: NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74HC86 NTE74C90
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator NTE74S6, NTE74HC86,14-Lead DIP, See Diag. 247 NTE74LS86, NTE74S86
|
OCR Scan
|
NTE7485,
16-Lead
NTE74LS85,
NTE74S85
NTE74C85
NTE74S6,
NTE74HC86
14-Lead
NTE74LS86,
NTE7493A
NTE7490
NTE74LS86
NTE74LS90
NTE7495
NTE74S86
NTE7486
NTE7489
NTE74C90
|
PDF
|
transistor d 1264 a
Abstract: transistor A 1264 transistor d 1264
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has
|
OCR Scan
|
BUK98150-55
OT223
OT223.
transistor d 1264 a
transistor A 1264
transistor d 1264
|
PDF
|
NTE7493A
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator B3 Data Input Q NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator VCc Input B2 Q vcc Cascade Input A < B
|
OCR Scan
|
NTE7485,
16-Lead
NTE74LS85,
NTE74S85
NTE74C85
NTE7486,
NTE74HC86
14-Lead
NTE74LS86,
NTE7493A
|
PDF
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C
|
OCR Scan
|
Q62702-F102
OT-23
IS21el2
IS21/S
aS35bG5
Giai71b
|
PDF
|
equivalent transistor c 5888
Abstract: No abstract text available
Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency
|
OCR Scan
|
bbS3R31
BFS520
OT323
OT323
OT323.
equivalent transistor c 5888
|
PDF
|
transistor A 1264
Abstract: ev 1265 transistor
Text: SIEMENS BFP 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA ' f j = 7,5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
|
OCR Scan
|
900MHz
OT-343
Q62702-F1504
transistor A 1264
ev 1265 transistor
|
PDF
|
DARLINGTON TRANSISTOR ARRAYS pu1501
Abstract: PU1501 PU4471 pu1601 PU4135 PU7000 PU3127 pu4126 PU4128 PU7456
Text: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) PU4000 Series 8 Pin -SIP Package (D72) (D73) Equivalent Circuit ^ ^ " \S tr u c tu r e PUA3000 Series I 10 Pin *S IP Package (D74)
|
OCR Scan
|
PU3000
PUA3000
PU4000
PU3110
PU3210
PU4110
PU4210
PU4410
PU4510
PU4310
DARLINGTON TRANSISTOR ARRAYS pu1501
PU1501
PU4471
pu1601
PU4135
PU7000
PU3127
pu4126
PU4128
PU7456
|
PDF
|
