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    TRANSISTOR 12N50C3 Search Results

    TRANSISTOR 12N50C3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 12N50C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12n50c3

    Abstract: TRANSISTOR SMD MARKING CODE 7A TRANSISTOR 12N50C3 12n50c
    Text: SPP12N50C3, SPI12N50C3 SPA12N50C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		SPP12N50C3, SPI12N50C3 SPA12N50C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP12N50C3 12n50c3 TRANSISTOR SMD MARKING CODE 7A TRANSISTOR 12N50C3 12n50c PDF

    12N50c

    Abstract: 12N50C3 PG-TO263-3-2 SPB12N50C3 SPP12N50C3 a187v
    Text: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB12N50C3 PG-TO263 Q67040-S4641 12N50C3 12N50c 12N50C3 PG-TO263-3-2 SPB12N50C3 SPP12N50C3 a187v PDF

    12n50c

    Abstract: DSA+1-16a
    Text: SPB12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB12N50C3 PG-TO263 Q67040-S4641 12N50C3 12n50c DSA+1-16a PDF

    12N50C3

    Abstract: TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2
    Text: SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2


    Original     		SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 P-TO262 P-TO263-3-2 P-TO220-3-1 12N50C3 TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2 PDF

    12N50C3

    Abstract: No abstract text available
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP12N50C3 12N50C3 PDF

    12N50C3

    Abstract: TRANSISTOR 12N50C3 SPW12N50C3 12N50C
    Text: SPW12N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW12N50C3 P-TO247 Q67040-S4580 12N50C3 12N50C3 TRANSISTOR 12N50C3 SPW12N50C3 12N50C PDF

    TRANSISTOR 12N50C3

    Abstract: 12N50C3 SPB12N50C3 SPP12N50C3
    Text: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB12N50C3 P-TO263-3-2 Q67040-S4641 12N50C3 TRANSISTOR 12N50C3 12N50C3 SPB12N50C3 SPP12N50C3 PDF

    12N50C3

    Abstract: No abstract text available
    Text: SPW12N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW12N50C3 P-TO247 Q67040-S4580 12N50C3 12N50C3 PDF

    12N50C3

    Abstract: PG-TO220-FP PG-TO220-3-31 SPA12N50C3 SPI12N50C3 SPP12N50C3 smd transistor 331
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 12N50C3 PG-TO220-FP SPA12N50C3 SPI12N50C3 SPP12N50C3 smd transistor 331 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 PDF

    12N50C3

    Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking PDF

    12N50C3

    Abstract: TRANSISTOR 12N50C3 12N50c TRANSISTOR SMD MARKING CODE 7A SPA12N50C3 SPI12N50C3 SPP12N50C3
    Text: SPP12N50C3, SPI12N50C3 SPA12N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1


    Original     		SPP12N50C3, SPI12N50C3 SPA12N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP12N50C3 12N50C3 TRANSISTOR 12N50C3 12N50c TRANSISTOR SMD MARKING CODE 7A SPA12N50C3 SPI12N50C3 SPP12N50C3 PDF

    12N50C3

    Abstract: TRANSISTOR 12N50C3 SPI12N50C3 SMD TRANSISTOR MARKING code TC SPP12N50C3 TRANSISTOR SMD MARKING CODE 7A PG-TO220-3-31 SPA12N50C3 Q67040-S4578
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 12N50C3 TRANSISTOR 12N50C3 SPI12N50C3 SMD TRANSISTOR MARKING code TC SPP12N50C3 TRANSISTOR SMD MARKING CODE 7A SPA12N50C3 Q67040-S4578 PDF

    12N50C3

    Abstract: 12N50c
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP12N50C3 12N50C3 12N50c PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF