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    TRANSISTOR 150 A PNP Search Results

    TRANSISTOR 150 A PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 150 A PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    st smd diode marking code

    Abstract: smd diode order marking code stmicroelectronics 2N5401HR NV SMD TRANSISTOR ST MAKE SMD TRANSISTOR st marking code TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR R SOC5401 175-LM
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 Operating temperature range -65°C to +200°C 2 3 1 2 3 TO-18 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		PDF 2N5401HR 2N5401HR st smd diode marking code smd diode order marking code stmicroelectronics NV SMD TRANSISTOR ST MAKE SMD TRANSISTOR st marking code TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR R SOC5401 175-LM

    2N5401UB1

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N5401HR 2N5401HR 2N5401UB1

    2n5401 smd

    Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N5401HR 2N5401HR 2n5401 smd 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES

    2N5401HR

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N5401HR 2N5401HR

    2N5401UB06

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N5401HR 2N5401HR 2N5401UB06

    ESCC 5207-005

    Abstract: SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 2N3810HR LCC6 bipolar junction transistor LCC-6 marking code SMD ic
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N3810HR 2N3810HR ESCC 5207-005 SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 LCC6 bipolar junction transistor LCC-6 marking code SMD ic

    SOC3810HRB

    Abstract: No abstract text available
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N3810HR 2N3810HR SOC3810HRB

    ESCC 5207 005

    Abstract: 2N3810HR 2N3810HRG
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor


    Original     		PDF 2N3810HR 2N3810HR DocID15385 ESCC 5207 005 2N3810HRG

    SOC3810HRB

    Abstract: transistor st 431 SOC38 ESCC SOC3810 2N3810
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet — production data Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N3810HR 2N3810HR SOC3810HRB transistor st 431 SOC38 ESCC SOC3810 2N3810

    Untitled

    Abstract: No abstract text available
    Text: MJH11017 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400


    Original     		PDF MJH11017

    JANSR2N5401UB

    Abstract: 2N5401UB06 J2N5401UB1
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


    Original     		PDF 2N5401HR 2N5401HR MIL-PRF19500 DocID16934 JANSR2N5401UB 2N5401UB06 J2N5401UB1

    Untitled

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


    Original     		PDF 2N5401HR 2N5401HR MIL-PRF19500 DocID16934

    POWER TRANSISTOR TO-220

    Abstract: MJE9780 hFE is transistor to220 transistor TO-220 Outline Dimensions
    Text: MJE9780 PNP SILICON POWER TRANSISTOR 3.0 AMPS, 150 VOLTS JEDEC TO-220 CASE DESCRIPTION: The Central Semiconductor MJE9780 is a PNP power transistor packaged in a TO-220 case, designed for CRT output applications. MAXIMUM RATINGS TA=25°C unless otherwise noted


    Original     		PDF MJE9780 O-220 MJE9780 O-220 POWER TRANSISTOR TO-220 hFE is transistor to220 transistor TO-220 Outline Dimensions

    DTA114GE

    Abstract: SMD310
    Text: MOTOROLA Order this document by DTA114GE/D SEMICONDUCTOR TECHNICAL DATA DTA114GE Product Preview General Purpose Transistor PNP Bipolar Junction Transistor with a 10 kW Base–Emitter Resistor 50 Volts 100 mAmps 150 mW MAXIMUM RATINGS TJ = 25°C unless otherwise noted


    Original     		PDF DTA114GE/D DTA114GE DTA114GE SMD310

    2N2905

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N2905AHR 2N2905AHR 2N2905

    2N2905At

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N2905AHR 2N2905AHR 2N2905At

    2SA835

    Abstract: transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE9780* Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.


    Original     		PDF MJE9780* MJE9780 220AB mAdc/10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA835 transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021

    marking A1 TRANSISTOR

    Abstract: 2PA1576 2PA1576Q 2PA1576R 2PA1576S 2PC4081 transistor sc-70 marking codes
    Text: 2PA1576 PNP general-purpose transistor Rev. 05 — 24 November 2004 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT323 SC-70 plastic package. The NPN complement is 2PC4081. 1.2 Features • Low current (max. 150 mA)


    Original     		PDF 2PA1576 OT323 SC-70) 2PC4081. sym013 2PA1576Q 2PA1576R 2PA1576S SC-70 marking A1 TRANSISTOR 2PA1576 2PA1576Q 2PA1576R 2PA1576S 2PC4081 transistor sc-70 marking codes

    Untitled

    Abstract: No abstract text available
    Text: MJH11021 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400


    Original     		PDF MJH11021

    marking A1 TRANSISTOR

    Abstract: 2PA1774 2PC4617 2PC4617Q 2PC4617R 2PC4617S SC-75
    Text: 2PC4617 NPN general-purpose transistor Rev. 04 — 25 November 2004 Product data sheet 1. Product profile 1.1 General description NPN transistor in a SOT416 SC-75 plastic package. The PNP complement is 2PA1774. 1.2 Features • Low current (max. 150 mA)


    Original     		PDF 2PC4617 OT416 SC-75) 2PA1774. sym021 2PC4617Q 2PC4617R 2PC4617S marking A1 TRANSISTOR 2PA1774 2PC4617 2PC4617Q 2PC4617R 2PC4617S SC-75

    Untitled

    Abstract: No abstract text available
    Text: m 2N6107 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6107 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 10 A PEAK Ib 3.0 A V ce -70 V P diss 40 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C


    OCR Scan     		PDF 2N6107 2N6107

    Untitled

    Abstract: No abstract text available
    Text: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK -40 V ce 50 W @ Tc = 25 °C P diss Tj -65 °C t o +150 °C T -65 °C t o +150 °C


    OCR Scan     		PDF 2N6132 2N6132

    2N6132

    Abstract: No abstract text available
    Text: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 10 A PEAK Ib 3.0 A V ce -40 V P diss 50 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C


    OCR Scan     		PDF 2N6132 2N6132

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by DTA114GE/D SEMICONDUCTOR TECHNICAL DATA DTA114GE Product Preview General Purpose Transistor PNP Bipolar Junction Transistor with a 10 kQ Base-Emitter Resistor 50 Volts 100 mAmps 150 mW MAXIMUM RATINGS T j = 25°C unless otherwise noted


    OCR Scan     		PDF DTA114GE/D DTA114GE OT-416/SC-90