TRANSISTOR 1557 B Search Results

TRANSISTOR 1557 B Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 1557 B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: EN2016D 312=1557 OOQllGa M SÔE D ELANTEC INC EN20J6D Die Fast QuadNPN Array A b s o lu te M a xim u m R a tin g s w T~</3 -as t a = 25°c> Pd Power Dissipation Each Transistor 500 mW (T^ = 25°C Ta Operating Temperature Range —55°Cto+125°C Ts Storage Temperature	OCR Scan	EN20J6D 500mW	PDF
1557 b transistor Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5 Text: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s	OCR Scan	30MHz 2SC1557 1557 b transistor transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC C4053 uhf transistor amplifier K8J5	PDF
r58 ah16 Abstract: ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208 Text: Application Note 1557 Author: Jia Wei ISL62883CEVAL2Z User Guide Introduction Interface Connections The ISL62883CEVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62883 features Intersil's	Original	ISL62883CEVAL2Z ISL62883 AN1557 r58 ah16 ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208	PDF
transistor D 1557 Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power Text: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly	OCR Scan	fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power	PDF
transistor d 1557 Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S Text: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly	OCR Scan	fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S	PDF
Untitled Abstract: No abstract text available Text: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.	OCR Scan	711002b BSS83 OT143	PDF
transistor d 1557 Abstract: No abstract text available Text: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.	OCR Scan	BSS83 OT143 transistor d 1557	PDF
Untitled Abstract: No abstract text available Text: ELANTEC la n te c HIGH PERFORMANCE ANAUQGINTEGSMÊO CIRCUITS D • 312TSS7 Dual Fast Single-Supply Decompensated Op Amp 0000054 E ■ "7- "7 T ~ /Q ' F eatu res G eneral D escrip tion • Inputs and outputs operate at negative supply rail • Gain bandw idth	OCR Scan	312TSS7 MIL-STD-883 EL2243	PDF
transistor d 1557 Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74 Text: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.	OCR Scan	D25fel2 BSS83 OT143 Z87623 7Z92669 transistor d 1557 BSS83 BR B6S M74 marking philips bss83 BSS83 M74	PDF
TRANSISTOR 187 Abstract: RADIO fm RECEIVER IC UHF transistor MW 882 IC 740 1ghz fm modulator cellular phone amplifier power control transistor 4w TRANSISTOR BTL POWER AMPLIFIER transistor 846 audio compandor IC transistor for RF amplifier and mixer Text: Philips Semiconductors Semiconductors for Wireless Communications Index Types added to the range since the last issue of handbook IC17 1997 are shown in bold print PAGE I2C-bus and ADC 96 80CL580/83CL580 Low-voltage 8-bit microcontrollers with UART, 83CL781/83CL782	Original	80CL580/83CL580 83CL781/83CL782 BGY120A; BGY120B; BGY120D BGY122A; BGY122B BG204 BGY205 BGY206 TRANSISTOR 187 RADIO fm RECEIVER IC UHF transistor MW 882 IC 740 1ghz fm modulator cellular phone amplifier power control transistor 4w TRANSISTOR BTL POWER AMPLIFIER transistor 846 audio compandor IC transistor for RF amplifier and mixer	PDF
t559 Abstract: No abstract text available Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz Q62702-F1378 OT-143 fl235bG5 53SLDS t559	PDF
M74 marking Abstract: BSS83 M74 MARKING J1A 50J2 BSS83 m74 lg Text: 71 lOfl2b 001^570 bS3 • P H I N B SS8 3 7 V . MOSFET N-CHANNEL ENHANCEMENT S W I T C H IN G TRA N S IS TO R S ym m etrical insulated-gate silicon MOS fie ld -e ffe c t transistor o f the N-channel enhancem ent m ode type. The tran sisto r is sealed in a S O T 143 envelope and features a lo w ON resistance and lo w capacitances.	OCR Scan	BSS83 OT143 7Z87623 711062b 7Z92669. M74 marking BSS83 M74 MARKING J1A 50J2 BSS83 m74 lg	PDF
basic circuit diagram of AC servo motor Abstract: 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram Text: ELANTEC 4 IE D INC 315=1557 Servo Motor Drivers G0017B3 b ÜELA " T S ¿ -i V 2 S F e a tu r e s G e n e ra l D e sc r ip tio n • No crossover distortion • Low output offset current • Maximum output swing • Short circuit protected • Programmable park voltage	OCR Scan	EL2036C/EL2037C basic circuit diagram of AC servo motor 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram	PDF
2242 Abstract: EL2242 EL2242C EL2242CM EL2242CN MIL-I-45208A QCX0002 "Op Amp" lm 324 Text: élantec EL2242C MGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features • Inputs and outputs operate at negative supply rail • U nity gain bandwidth—30 M Hz • High slew rate—40 V // as • Settles to 0.01% of a 10V swing in 500 ns • Operates with supplies as low as	OCR Scan	EL2242C MIL-STD-883 12-bit EL2242CN MDP0031 EL2242CM 175Meg 800E-18 EL2242 2242 EL2242C MIL-I-45208A QCX0002 "Op Amp" lm 324	PDF

2SC1541 Abstract: transistor 1548 b 4500cm Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	re-25 700mhz, 2sa795 Tc-25 2sa794 2sa900 V156S 100hz, 250pS 2SC1541 transistor 1548 b 4500cm	PDF
Untitled Abstract: No abstract text available Text: NSL12TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 12 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage	Original	NSL12TT1	PDF
MRF245 Abstract: SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780 Text: 450 .512 MHz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF P ou t Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE	OCR Scan	XO-72 O-117 02N6082 BM80-12 SD1416 MM1601 MRF631 MRF245 SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780	PDF
SD1076 Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510 Text: 2 - 30 MHz linear SSB applications applications linéaires BLU TYPE PACKAGE CONFIG. THOMSON-CSF V CC V Pout (PEP) Pin fo (W) (W) (MHz) Gp min (dB) IMD max (dB) 4LFL 4LFL 4LFL 4LFL CE CE CE CE 12,5 12,5 12,5 12,5 > > > > 20 50 75 100 30 30 30 30 0,63 1,6	OCR Scan	BAM20 2N5642 B25-12 2N60822N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1076 MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510	PDF
current mirrors wilson Abstract: 8E-15 2N3906 EP2015ACN EP2015C EP2015CM EP2015CN MPQ3906 TPQ3906 PNP Monolithic Transistor Pair Text: EP2015C/EP2015AC HIGH PERFORMANCE ANALOG INTEGRATED ClRCunS FastQuad PNP Array F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides A.C. performance	OCR Scan	EP2015C/EP2015AC 2N3906 TPQ3906 MPQ3906 EP2015CN MDP0031 EP2015ACN EP2015CM 20-Lead current mirrors wilson 8E-15 2N3906 EP2015C MPQ3906 PNP Monolithic Transistor Pair	PDF
trw RF POWER TRANSISTOR Abstract: amplitude modulator gilbert cell DCS1800 RF2422 quadrature modulation two front end Text: TA0007 TA0007 Systems RF2422: A Direct Quadrature Modulator for 0.9GHz to 2.5GHz Wireless $ 'LUHFW 4XDGUDWXUH 0RGXODWRU IRU +] WR +] :LUHOHVV 6\VWHPV ,QWURGXFWLRQ As wireless system designs have moved from carrier frequencies at approximately 900MHz to wider bandwidth applications like Personal Communication System PCS phones at 1.8GHz and wireless local area	Original	TA0007 RF2422: 900MHz DCS1800 RF2422 RF2422 trw RF POWER TRANSISTOR amplitude modulator gilbert cell quadrature modulation two front end	PDF
smd transistor 6c Abstract: No abstract text available Text: SflE D 312^357 □ □ □ 2 5 tiö TTT B E L A EN2016 â b fltK EN2016 F asi QuadNPN A rray äm äB äw äsR M B . 'M3-ZS ELANTEC INC F eatu res G eneral D escrip tion • • • • • T he EN2016 fam ily are quad m onolithic vertical N P N tran sis	OCR Scan	EN2016 2N3904 TPQ3904 MPQ3904 EN2016 em2016 120mA smd transistor 6c	PDF
PT8740 Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828 Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72	OCR Scan	T8710 SD1238 2N5126 2N918 2N5642 BM100-28 MM1603 MRF633 SD1145 PT8717 PT8740 PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828	PDF
EN2016ACN Abstract: tmax t7 Tmax T7 S 800 transistor SMD 2n3904 2N3904 EN2016ACJ EN2016CJ EN2016CM EN2016CN MPQ3904 Text: ELANTEC INC MIE J> S 312^557 0001757 = ES EL A EN2016/E N 2016A _ _ . 2 .5 Fast QuadNPN A rray ; HIGH PERFORMANCEANALOGINTEGRATEDCIRCUITS H 2 tss o h-* Ci s F eatures G eneral D escription • • • • • The EN2016 family are quad monolithic vertical N P N transis	OCR Scan	2N3904 TPQ3904 MPQ3904 EN2016CN MDP0031 EN2016ACN EN2016CJ EN2016/EN2016A subcktem2016 tmax t7 Tmax T7 S 800 transistor SMD 2n3904 2N3904 EN2016ACJ EN2016CM MPQ3904	PDF
Untitled Abstract: No abstract text available Text: EL2160C F eatu res G eneral D escrip tion • 130 M Hz 3 dB bandwidth Ay = + 2 • 180 M Hz 3 dB bandwidth (AV = + 1 ) • 0.01% differential gain, R l = 500ft • 0.01° differential phase, R l = 500ft • Low supply current, 8.5 mA • Wide supply range, ± 2V to ± 15V	OCR Scan	EL2160C 500ft EL2160C 43juH 285pF	PDF

TRANSISTOR 1557 B Search Results

TRANSISTOR 1557 B Result Highlights (5)

TRANSISTOR 1557 B Datasheets Context Search

Untitled

1557 b transistor

r58 ah16

transistor D 1557

transistor d 1557

Untitled

transistor d 1557

Untitled

transistor d 1557

TRANSISTOR 187

t559

M74 marking

basic circuit diagram of AC servo motor

2242

2SC1541

Untitled

MRF245

SD1076

current mirrors wilson

trw RF POWER TRANSISTOR

smd transistor 6c

PT8740

EN2016ACN

Untitled