Untitled
Abstract: No abstract text available
Text: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • TO-92 SOT-23 Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625 mW ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃) Rating Symbol Rating Unit Collector-Base Voltage
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PJ2N3904
OT-23
PJ2N3904CT
PJ2N3904CX
OT-23
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2SC3835
Abstract: humidifier circuit switch NPN TC4125
Text: UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL RATING UNIT Collector-Base Voltage
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2SC3835
QW-R214-002
2SC3835
humidifier circuit
switch NPN
TC4125
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2SC3835
Abstract: No abstract text available
Text: UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL RATING UNIT Collector-Base Voltage
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2SC3835
QW-R214-002
2SC3835
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transistor P2F
Abstract: ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f
Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
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PZT2907AT1
OT-223
PZT2222AT1
transistor P2F
ON MARKING P2F
p2f transistor
PZT2907AT1G
PZT2907AT3
on semiconductor p2f
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Untitled
Abstract: No abstract text available
Text: PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625 mW . TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃) Rating Pin : 1. Emitter 2. Base 3. Collector Pin : 1. Base
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PJ2N3906
OT-23
PJ2N3906CT
PJ2N3906CX
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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2SC3834
Abstract: DC DC converter output 200V ic
Text: SavantIC Semiconductor Product Specification 2SC3834 Silicon NPN Power Transistors DESCRIPTION •Switching transistor ·With TO-220 package APPLICATIONS ·For humidifier ,DC-DC converter and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SC3834
O-220
2SC3834
DC DC converter output 200V ic
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channei enhancement mode logic level fleld-effect power transistor in a
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BUK565-200A
SQT404
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B0159
Abstract: No abstract text available
Text: MOTOROLA Order this document by B0159/0 SEMICONDUCTOR TECHNICAL DATA ESDI 59 Plastic Medium Power NPN Silicon Transistor . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR
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B0159/0
BD159/D
B0159
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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mj423 motorola
Abstract: mj423
Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 4M VOLTS 125 WATTS . . . designed for medium-to-high voltage inverters, converters, regulators and switching circuits.
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MJ423/D
MJ423
mj423 motorola
mj423
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Untitled
Abstract: No abstract text available
Text: PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW . TO-92 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C ) • Symbol Rating Unit Collector-Base Voltage VCBO 40
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PJ2N3906
OT-23
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW TO-92 SOT-23 B ABSOLUTE M AXIM U M RATINGS (Ta = 25 C) Symbol Rating Unit Collector-Base Voltage VCBO
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PJ2N3904
OT-23
Cut-off70
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14N60E
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged
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14N60ED/D
14N60E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP4N60E/D
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Motorola AN222A
Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Text: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR
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MJ10023/D
MJ10023
Motorola AN222A
application MJ10023
U430B
motorola 222A
motorola SPS bipolar
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N60E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP21N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP21
N60E/D
MGP21N60ED
N60E
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MGP20N
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP20N60U/D
MGP20N60
O-220
21A-09
O-22QAB
MGP20N
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transistor a09
Abstract: GP7N60 MGP7N60E
Text: MOTOROLA O rder th is docum ent by MGP7N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP7N60E Insulated G a te Bipolar Transistor N-Channel Enhancem ent-M ode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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MGP7N60E/D
GP7N60E
T0-220
transistor a09
GP7N60
MGP7N60E
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diode lt 238
Abstract: 21N60ED
Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced
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MGW21
N60ED/D
MGW21N60ED/D
diode lt 238
21N60ED
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1606 B
Abstract: No abstract text available
Text: TO SH IBA RN1601-RN1606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1601, RN 1602, RN1603, RN1604, RN1605, RN 1606 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND Unit in mm DRIVER + 0.2 CIRCUIT APPLICATIONS. 2 .8 -0 .3 + 0.2 1.6-0.1
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RN1601-RN1606
RN1601,
RN1603,
RN1604,
RN1605,
RN2601
RN2606
RN1601
RN1602
RN1603
1606 B
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier P D - 9. 1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1- 5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC20F
O-22QAB
6266C
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